Satyabrata Jit
Satyabrata Jit
Verified email at iitbhu.ac.in - Homepage
Title
Cited by
Cited by
Year
2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure
S Kumar, E Goel, K Singh, B Singh, PK Singh, K Baral, S Jit
IEEE Transactions on Electron Devices 64 (3), 960-968, 2017
772017
A 2D analytical model of the channel potential and threshold voltage of double-gate (DG) MOSFETs with vertical Gaussian doping profile
PK Tiwari, S Kumar, S Mittal, V Srivastava, U Pandey, S Jit
2009 International Multimedia, Signal Processing and Communication …, 2009
732009
2-D analytical modeling of threshold voltage for graded-channel dual-material double-gate MOSFETs
E Goel, S Kumar, K Singh, B Singh, M Kumar, S Jit
IEEE Transactions on Electron Devices 63 (3), 966-973, 2016
702016
A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High-Stacked Gate-Oxide Structure
S Kumar, E Goel, K Singh, B Singh, M Kumar, S Jit
IEEE Transactions on Electron Devices 63 (8), 3291-3299, 2016
682016
A two-dimensional analytical model for threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect transistors
PK Tiwari, S Dubey, M Singh, S Jit
Journal of Applied Physics 108 (7), 074508, 2010
652010
Coverage and connectivity in WSNs: A survey, research issues and challenges
A Tripathi, HP Gupta, T Dutta, R Mishra, KK Shukla, S Jit
IEEE Access 6, 26971-26992, 2018
532018
A two-dimensional model for the potential distribution and threshold voltage of short-channel double-gate metal-oxide-semiconductor field-effect transistors with a vertical …
S Dubey, PK Tiwari, S Jit
Journal of Applied Physics 108 (3), 034518, 2010
532010
A new 2-D model for the potential distribution and threshold voltage of fully depleted short-channel Si-SOI MESFETs
P Pandey, BB Pal, S Jit
IEEE Transactions on Electron Devices 51 (2), 246-254, 2004
512004
Analytical modeling of channel potential and threshold voltage of double-gate junctionless FETs with a vertical Gaussian-like doping profile
B Singh, D Gola, K Singh, E Goel, S Kumar, S Jit
IEEE Transactions on Electron Devices 63 (6), 2299-2305, 2016
462016
Ultraviolet photodetection properties of ZnO/Si heterojunction diodes fabricated by ALD technique without using a buffer layer
P Hazra, SK Singh, S Jit
Journal of semiconductor technology and science 14 (1), 117-123, 2014
462014
Ultraviolet Detection Properties of p-Si/n-TiO2Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol–Gel Methods: A Comparative Study
G Rawat, D Somvanshi, H Kumar, Y Kumar, C Kumar, S Jit
IEEE Transactions on Nanotechnology 15 (2), 193-200, 2015
422015
Mean barrier height and Richardson constant for Pd/ZnO thin film-based Schottky diodes grown on n-Si substrates by thermal evaporation method
D Somvanshi, S Jit
IEEE electron device letters 34 (10), 1238-1240, 2013
422013
Analysis of temperature-dependent electrical characteristics of n-ZnO nanowires (NWs)/p-Si heterojunction diodes
D Somvanshi, S Jit
IEEE Transactions on Nanotechnology 13 (1), 62-69, 2013
352013
Sol-gel-based highly sensitive Pd/n-ZnO thin film/n-Si Schottky ultraviolet photodiodes
AB Yadav, A Pandey, D Somvanshi, S Jit
IEEE Transactions on Electron Devices 62 (6), 1879-1884, 2015
342015
2-D Analytical Drain Current Model of Double-Gate Heterojunction TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure
S Kumar, K Singh, S Chander, E Goel, PK Singh, K Baral, B Singh, S Jit
IEEE Transactions on Electron Devices 65 (1), 331-338, 2017
332017
Effects of electrostatically doped source/drain and ferroelectric gate oxide on subthreshold swing and impact ionization rate of strained-Si-on-insulator tunnel field-effect …
M Kumar, S Jit
IEEE Transactions on Nanotechnology 14 (4), 597-599, 2015
332015
A new optoelectronic integrated device for light-amplifying optical switch (LAOS)
S Jit, BB Pal
IEEE Transactions on Electron Devices 48 (12), 2732-2739, 2001
302001
Electrical and ammonia gas sensing properties of poly (3, 3‴-dialkylquaterthiophene) based organic thin film transistors fabricated by floating-film transfer method
C Kumar, G Rawat, H Kumar, Y Kumar, R Prakash, S Jit
Organic Electronics 48, 53-60, 2017
282017
Colloidal ZnO quantum dots based spectrum selective ultraviolet photodetectors
Y Kumar, H Kumar, G Rawat, C Kumar, A Sharma, BN Pal, S Jit
IEEE Photonics Technology Letters 29 (4), 361-364, 2017
282017
Pd Schottky contacts on sol–gel derived ZnO thin films with nearly ideal Richardson constant
AB Yadav, A Pandey, S Jit
IEEE electron device letters 35 (7), 729-731, 2014
272014
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