| Method for growing a monocrystalline tin-containing semiconductor material B Vincent, F Gencarelli, R Loo, M Caymax | 423 | 2019 |
| Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition B Vincent, F Gencarelli, H Bender, C Merckling, B Douhard, DH Petersen, ... Applied Physics Letters 99 (15), 2011 | 250 | 2011 |
| GeSn/Ge heterostructure short-wave infrared photodetectors on silicon A Gassenq, F Gencarelli, J Van Campenhout, Y Shimura, R Loo, G Narcy, ... Optics express 20 (25), 27297-27303, 2012 | 213 | 2012 |
| Crystalline properties and strain relaxation mechanism of CVD grown GeSn F Gencarelli, B Vincent, J Demeulemeester, A Vantomme, A Moussa, ... ECS Journal of Solid State Science and Technology 2 (4), P134, 2013 | 155 | 2013 |
| Silicon-based photonic integration beyond the telecommunication wavelength range G Roelkens, UD Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014 | 142 | 2014 |
| Low-temperature Ge and GeSn chemical vapor deposition using Ge2H6 F Gencarelli, B Vincent, L Souriau, O Richard, W Vandervorst, R Loo, ... Thin Solid Films 520 (8), 3211-3215, 2012 | 122 | 2012 |
| Silicon-based heterogeneous photonic integrated circuits for the mid-infrared G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... Optical Materials Express 3 (9), 1523-1536, 2013 | 85 | 2013 |
| Advancing CMOS beyond the Si roadmap with Ge and III/V devices M Heyns, A Alian, G Brammertz, M Caymax, YC Chang, LK Chu, ... 2011 International Electron Devices Meeting, 13.1. 1-13.1. 4, 2011 | 82 | 2011 |
| Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method S Gupta, B Vincent, B Yang, D Lin, F Gencarelli, JYJ Lin, R Chen, ... 2012 International Electron Devices Meeting, 16.2. 1-16.2. 4, 2012 | 51 | 2012 |
| Ge1-xSnx materials: Challenges and applications R Loo, B Vincent, F Gencarelli, C Merckling, A Kumar, G Eneman, ... ECS Journal of Solid State Science and Technology 2 (1), N35, 2012 | 42 | 2012 |
| Ge1-xSnx materials: Challenges and applications R Loo, B Vincent, F Gencarelli, C Merckling, A Kumar, G Eneman, ... ECS Journal of Solid State Science and Technology 2 (1), N35, 2012 | 42 | 2012 |
| GeSn channel nMOSFETs: Material potential and technological outlook S Gupta, B Vincent, DHC Lin, M Gunji, A Firrincieli, F Gencarelli, ... 2012 Symposium on VLSI Technology (VLSIT), 95-96, 2012 | 42 | 2012 |
| Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1− xSnx films F Gencarelli, D Grandjean, Y Shimura, B Vincent, D Banerjee, ... Journal of Applied Physics 117 (9), 2015 | 35 | 2015 |
| In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge (001) substrates Y Shimura, S Takeuchi, O Nakatsuka, B Vincent, F Gencarelli, T Clarysse, ... Thin Solid Films 520 (8), 3206-3210, 2012 | 27 | 2012 |
| Electrical properties of extended defects in strain relaxed GeSn S Gupta, E Simoen, R Loo, Y Shimura, C Porret, F Gencarelli, K Paredis, ... Applied Physics Letters 113 (2), 2018 | 23 | 2018 |
| GeSn technology: Impact of Sn on Ge CMOS applications S Zaima, O Nakatsuka, Y Shimura, M Adachi, M Nakamura, S Takeuchi, ... ECS Transactions 41 (7), 231, 2011 | 18 | 2011 |
| On the interplay between relaxation, defect formation, and atomic Sn distribution in Ge (1− x) Sn (x) unraveled with atom probe tomography A Kumar, J Demeulemeester, J Bogdanowicz, J Bran, D Melkonyan, ... Journal of Applied Physics 118 (2), 2015 | 15 | 2015 |
| Biaxial and uniaxial compressive stress implemented in Ge (Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments B Vincent, F Gencarelli, D Lin, L Nyns, O Richard, H Bender, B Douhard, ... ECS Transactions 41 (7), 239, 2011 | 15 | 2011 |
| Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition F Gencarelli, Y Shimura, A Kumar, B Vincent, A Moussa, D Vanhaeren, ... Thin Solid Films 590, 163-169, 2015 | 14 | 2015 |
| Identification of deep levels associated with extended and point defects in GeSn epitaxial layers using DLTS S Gupta, E Simoen, H Vrielinck, C Merckling, B Vincent, F Gencarelli, ... ECS Transactions 53 (1), 251, 2013 | 12 | 2013 |
