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Sundararaman Gopalan (Sundar Gopalan)
Sundararaman Gopalan (Sundar Gopalan)
Professor, Electronics and Communication Engineering, Amrita Vishwa Vidyapeetham, Amritapuri Campus
Verified email at am.amrita.edu - Homepage
Title
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Cited by
Year
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
L Kang, BH Lee, WJ Qi, Y Jeon, R Nieh, S Gopalan, K Onishi, JC Lee
IEEE Electron Device Letters 21 (4), 181-183, 2000
3392000
Bonding states and electrical properties of ultrathin gate dielectrics
CS Kang, HJ Cho, K Onishi, R Nieh, R Choi, S Gopalan, S Krishnan, ...
Applied Physics Letters 81 (14), 2593-2595, 2002
2072002
A critical review on the utilization of storage and demand response for the implementation of renewable energy microgrids
FC Robert, GS Sisodia, S Gopalan
Sustainable cities and society 40, 735-745, 2018
1642018
MOSFET devices with polysilicon on single-layer HfO/sub 2/high-K dielectrics
L Kang, K Onishi, Y Jeon, BH Lee, C Kang, WJ Qi, R Nieh, S Gopalan, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
1532000
Characteristics of TaN gate MOSFET with ultrathin hafnium oxide (8/spl Aring/-12/spl Aring/)
BH Lee, R Choi, L Kang, S Gopalan, R Nieh, K Onishi, Y Jeon, WJ Qi, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
1292000
Improvement of surface carrier mobility of HfO/sub 2/MOSFETs by high-temperature forming gas annealing
K Onishi, CS Kang, R Choi, HJ Cho, S Gopalan, RE Nieh, SA Krishnan, ...
IEEE Transactions on Electron Devices 50 (2), 384-390, 2003
1222003
High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by post-deposition anneal
MS Akbar, S Gopalan, HJ Cho, K Onishi, R Choi, R Nieh, CS Kang, ...
Applied physics letters 82 (11), 1757-1759, 2003
1022003
High-quality ultra-thin HfO/sub 2/gate dielectric MOSFETs with TaN electrode and nitridation surface preparation
R Choi, CS Kang, BH Lee, K Onishi, R Nieh, S Gopalan, E Dharmarajan, ...
2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2001
982001
Evaluation of silicon surface nitridation effects on ultra-thin gate dielectrics
R Nieh, R Choi, S Gopalan, K Onishi, CS Kang, HJ Cho, S Krishnan, ...
Applied physics letters 81 (9), 1663-1665, 2002
892002
Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)
BH Lee, CD Young, R Choi, JH Sim, G Bersuker, CY Kang, R Harris, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
832004
Structural and electrical properties of HfO2 with top nitrogen incorporated layer
HJ Cho, CS Kang, K Onishi, S Gopalan, R Nieh, R Choi, S Krishnan, ...
IEEE Electron Device Letters 23 (5), 249-251, 2002
792002
Low cost, highly reliable rural electrification through a combination of grid extension and local renewable energy generation
FC Robert, S Gopalan
Sustainable cities and society 42, 344-354, 2018
672018
Reliability Characteristics, Including NBTI, of Polysilicon Gate HfO_2 MOSFET's
K Onishi
Technical Digest of International Electron Devices Meeting, 2001, 2001
652001
IoT based low cost single sensor node remote health monitoring system
VV Garbhapu, S Gopalan
Procedia computer science 113, 408-415, 2017
612017
Area dependence of TDDB characteristics for HfO2 gate dielectrics
YH Kim, K Onishi, CS Kang, HJ Cho, R Nieh, S Gopalan, R Choi, J Han, ...
IEEE Electron Device Letters 23 (10), 594-596, 2002
602002
Electrical and physical characteristics of ultrathin hafnium silicate films with polycrystalline silicon and TaN gates
S Gopalan, K Onishi, R Nieh, CS Kang, R Choi, HJ Cho, S Krishnan, ...
Applied physics letters 80 (23), 4416-4418, 2002
562002
Effects of high-temperature forming gas anneal on HfO/sub 2/MOSFET performance
K Onishi, CS Kang, R Choi, HJ Cho, S Gopalan, R Nieh, S Krishnan, ...
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2002
552002
S. Gopalan, R. Choi, and JC Lee
KO Kang, Y Jeon, BH Lee, C Kang, WJ Qi, R Nieh
Tech. Dig.-Int. Electron Devices Meet 35, 2000
542000
Electron Devices Meeting, 2000. IEDM Technical Digest
BH Lee, R Choi, L Kang, S Gopalan, R Nieh, K Onishi, Y Jeon, WJ Qi, ...
IEEE, New York, NY pp 2, 1-2.4, 2000
482000
Single-layer thin HfO/sub 2/gate dielectric with n+-polysilicon gate
L Kang, Y Jeon, K Onishi, BH Lee, WJ Qi, R Nieh, S Gopalan, JC Lee
2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000
462000
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