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Steven A. Vitale
Steven A. Vitale
Senior Technical Staff, MIT Lincoln Laboratory
Verified email at ll.mit.edu
Title
Cited by
Cited by
Year
Liquid droplet dispersions formed by homogeneous liquid− liquid nucleation:“The Ouzo Effect”
SA Vitale, JL Katz
Langmuir 19 (10), 4105-4110, 2003
5262003
Manufacturing a semiconductive device using a controlled atomic layer removal process
SA Vitale
US Patent 7,494,882, 2009
4042009
Valleytronics: opportunities, challenges, and paths forward
SA Vitale, D Nezich, JO Varghese, P Kim, N Gedik, P Jarillo‐Herrero, ...
Small 14 (38), 1801483, 2018
3042018
Silicon etching yields in and HBr high density plasmas
SA Vitale, H Chae, HH Sawin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (5 …, 2001
1472001
Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials
C Ríos, Q Du, Y Zhang, CC Popescu, MY Shalaginov, P Miller, C Roberts, ...
PhotoniX 3 (1), 26, 2022
1352022
FDSOI process technology for subthreshold-operation ultralow-power electronics
SA Vitale, PW Wyatt, N Checka, J Kedzierski, CL Keast
Proceedings of the IEEE 98 (2), 333-342, 2010
1352010
Work-function-tuned TiN metal gate FDSOI transistors for subthreshold operation
SA Vitale, J Kedzierski, P Healey, PW Wyatt, CL Keast
IEEE Transactions on Electron Devices 58 (2), 419-426, 2010
1272010
Plasma–surface kinetics and simulation of feature profile evolution in etching of polysilicon
W Jin, SA Vitale, HH Sawin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (6 …, 2002
1152002
Multi‐level electro‐thermal switching of optical phase‐change materials using graphene
C Ríos, Y Zhang, MY Shalaginov, S Deckoff-Jones, H Wang, S An, ...
Advanced Photonics Research 2 (1), 2000034, 2021
912021
Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching
SA Vitale, BA Smith
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2003
902003
Progress toward diamond power field‐effect transistors
MW Geis, TC Wade, CH Wuorio, TH Fedynyshyn, B Duncan, ME Plaut, ...
physica status solidi (a) 215 (22), 1800681, 2018
812018
Method of simultaneously siliciding a polysilicon gate and source/drain of a semiconductor device, and related device
F Mehrad, S Yu, SA Vitale, JG Tran
US Patent 7,727,842, 2010
492010
Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in and high density plasmas
SA Vitale, H Chae, HH Sawin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (6 …, 2000
492000
Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform
J Zhu, JH Park, SA Vitale, W Ge, GS Jung, J Wang, M Mohamed, T Zhang, ...
Nature Nanotechnology 18 (5), 456-463, 2023
482023
Etching of organosilicate glass low-k dielectric films in halogen plasmas
SA Vitale, HH Sawin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20 (3 …, 2002
452002
Effect of surface roughness and H–termination chemistry on diamond's semiconducting surface conductance
T Wade, MW Geis, TH Fedynyshyn, SA Vitale, JO Varghese, DM Lennon, ...
Diamond and Related Materials 76, 79-85, 2017
442017
Silicon dioxide etching yield measurements with inductively coupled fluorocarbon plasmas
H Chae, SA Vitale, HH Sawin
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 21 (2 …, 2003
402003
The effect of a carbon-carbon double bond on electron beam-generated plasma decomposition of trichloroethylene and 1, 1, 1-trichloroethane
SA Vitale, K Hadidi, DR Cohn, P Falkos
Plasma Chemistry and Plasma Processing 17, 59-78, 1997
321997
Transient tap couplers for wafer-level photonic testing based on optical phase change materials
Y Zhang, Q Zhang, C Ríos, MY Shalaginov, JB Chou, C Roberts, P Miller, ...
ACS Photonics 8 (7), 1903-1908, 2021
282021
Chemical and semiconducting properties of NO2-activated H-terminated diamond
MW Geis, TH Fedynyshyn, ME Plaut, TC Wade, CH Wuorio, SA Vitale, ...
Diamond and Related Materials 84, 86-94, 2018
242018
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