| Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-k gate dielectrics S Chatterjee, BN Chowdhury, A Das, S Chattopadhyay Semiconductor science and technology 28 (12), 125011, 2013 | 24 | 2013 |
| Analytical modeling of the lattice and thermo-elastic coefficient mismatch-induced stress into silicon nanowires horizontally embedded on insulator-on-silicon substrates S Chatterjee, S Chattopadhyay Superlattices and Microstructures 101, 384-396, 2017 | 14 | 2017 |
| Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on insulator-on-silicon substrates with high-k gate-dielectrics S Chatterjee, S Chattopadhyay Superlattices and Microstructures 98, 194-202, 2016 | 13 | 2016 |
| Fraction of insertion of the channel fin as performance booster in strain-engineered p-FinFET devices with insulator-on-silicon substrate S Chatterjee, S Chattopadhyay IEEE Transactions on Electron Devices 65 (2), 411-418, 2017 | 12 | 2017 |
| Investigation of the performance of strain-engineered silicon nanowire field effect transistors (ɛ-Si-NWFET) on IOS substrates S Chatterjee, S Sikdar, B Nag Chowdhury, S Chattopadhyay Journal of Applied Physics 125 (8), 082506, 2019 | 11 | 2019 |
| Strain-Engineered Asymmetrical Superlattice Si/Si1–xGex Nano-ATT p++-n-n−-n++ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain S Chatterjee, M Mukherjee IEEE Transactions on Electron Devices 66 (8), 3659-3667, 2019 | 10 | 2019 |
| Direct band gap silicon nanowire avalanche transit time thz opto-electronic sensor with strain-engineering S Chatterjee, M Mukherjee Optical and Quantum Electronics 52, 1-21, 2020 | 6 | 2020 |
| Millimetre‐wave high–low IMPATT source development: First on‐chip experimental verification M Mukherjee, S Chatterjee Electronics Letters 57 (7), 294-296, 2021 | 3 | 2021 |
| Hybrid Multi-Graphene/Si Avalanche Transit Time< h-ATT> Terahertz Power Oscillator: Theoretical Reliability and Experimental Feasibility Studies D Chakraborty, S Chatterjee, M Mukherjee IEEE Transactions on Device and Materials Reliability 20 (4), 667-677, 2020 | 3 | 2020 |
| Band-engineered quasi-AlGaN/GaN high-electron-mobility-avalanche-transit-time (HEMATT) oscillator: electro-optical interaction study in sub-mm frequency domain S Chatterjee, M Moumita The European Physical Journal Plus, 2022 | 2 | 2022 |
| High electron mobility effect in band-engineered GaN/quasi-AlGaN based exotic avalanche transit time diode arrays: application as ultra fast THz switches. S Chatterjee, M Moumita Microsystem Technologies, 2022 | 2 | 2022 |
| Strained Si/Si1−yCy superlattice based quasi-read avalanche transit-time devices for terahertz ultrafast switches S Chatterjee, M Mukherjee Applied Physics A 127, 1-16, 2021 | 2 | 2021 |
| THz Medical Imaging: Current Status and Future Outlook M Mukherjee, S Chatterjee Terahertz Biomedical and Healthcare Technologies, 113-125, 2020 | 2 | 2020 |
| Process-induced strain engineering in the silicon-on-sapphire (SOS) fin field effect transistor (FinFET) channels S Chatterjee, S Chattopadhyay, A Bhattacharyya 2015 6th International Conference on Computers and Devices for Communication …, 2015 | 2 | 2015 |
| Low latency high throughput CORDIC based Fourier analysis S Pramanik, S Chakraborty, R Saha, R Basu, R De, S Chatterjee, ... 2016 IEEE 7th Annual Information Technology, Electronics and Mobile …, 2016 | 1 | 2016 |
| Process-induced-strain maximization of nano-scale silicon-on-sapphire high-k gate-dielectric MOSFETs by adjusting device aspect ratio S Chatterjee 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014 | 1 | 2014 |
| Electrical Characterization in Ultra-Wide Band Gap III-Nitride Heterostructure IMPATT/HEMATT Diodes: A Room-Temperature Sub-Millimeter Wave Power Source S Chatterjee, M Mukherjee Journal of Electronic Materials 52 (2), 1552-1563, 2023 | | 2023 |
| Triple gate Field Effect Transistor (TGFET) with voltage control potential wells (VCPWs) along the channel S Chatterjee, S Ray, SK Dey, S Hazra, S Kar, S Chatterjee 2016 IEEE 7th Annual Information Technology, Electronics and Mobile …, 2016 | | 2016 |
| Performance-enhancing Nanowire-substrates Capable of Boosting Carrier Mobility through Stress-engineering S Chatterjee | | |
