Dr. Sulagna Chatterjee
Dr. Sulagna Chatterjee
Assistant professor, Electronics and Communication Engineering, Adamas University
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Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-k gate dielectrics
S Chatterjee, BN Chowdhury, A Das, S Chattopadhyay
Semiconductor science and technology 28 (12), 125011, 2013
Analytical modeling of the lattice and thermo-elastic coefficient mismatch-induced stress into silicon nanowires horizontally embedded on insulator-on-silicon substrates
S Chatterjee, S Chattopadhyay
Superlattices and Microstructures 101, 384-396, 2017
Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on insulator-on-silicon substrates with high-k gate-dielectrics
S Chatterjee, S Chattopadhyay
Superlattices and Microstructures 98, 194-202, 2016
Fraction of insertion of the channel fin as performance booster in strain-engineered p-FinFET devices with insulator-on-silicon substrate
S Chatterjee, S Chattopadhyay
IEEE Transactions on Electron Devices 65 (2), 411-418, 2017
Investigation of the performance of strain-engineered silicon nanowire field effect transistors (ɛ-Si-NWFET) on IOS substrates
S Chatterjee, S Sikdar, B Nag Chowdhury, S Chattopadhyay
Journal of Applied Physics 125 (8), 082506, 2019
Strain-Engineered Asymmetrical Superlattice Si/Si1–xGex Nano-ATT p++-n-n-n++ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain
S Chatterjee, M Mukherjee
IEEE Transactions on Electron Devices 66 (8), 3659-3667, 2019
Direct band gap silicon nanowire avalanche transit time thz opto-electronic sensor with strain-engineering
S Chatterjee, M Mukherjee
Optical and Quantum Electronics 52, 1-21, 2020
Millimetre‐wave high–low IMPATT source development: First on‐chip experimental verification
M Mukherjee, S Chatterjee
Electronics Letters 57 (7), 294-296, 2021
Hybrid Multi-Graphene/Si Avalanche Transit Time< h-ATT> Terahertz Power Oscillator: Theoretical Reliability and Experimental Feasibility Studies
D Chakraborty, S Chatterjee, M Mukherjee
IEEE Transactions on Device and Materials Reliability 20 (4), 667-677, 2020
Band-engineered quasi-AlGaN/GaN high-electron-mobility-avalanche-transit-time (HEMATT) oscillator: electro-optical interaction study in sub-mm frequency domain
S Chatterjee, M Moumita
The European Physical Journal Plus, 2022
High electron mobility effect in band-engineered GaN/quasi-AlGaN based exotic avalanche transit time diode arrays: application as ultra fast THz switches.
S Chatterjee, M Moumita
Microsystem Technologies, 2022
Strained Si/Si1−yCy superlattice based quasi-read avalanche transit-time devices for terahertz ultrafast switches
S Chatterjee, M Mukherjee
Applied Physics A 127, 1-16, 2021
THz Medical Imaging: Current Status and Future Outlook
M Mukherjee, S Chatterjee
Terahertz Biomedical and Healthcare Technologies, 113-125, 2020
Process-induced strain engineering in the silicon-on-sapphire (SOS) fin field effect transistor (FinFET) channels
S Chatterjee, S Chattopadhyay, A Bhattacharyya
2015 6th International Conference on Computers and Devices for Communication …, 2015
Low latency high throughput CORDIC based Fourier analysis
S Pramanik, S Chakraborty, R Saha, R Basu, R De, S Chatterjee, ...
2016 IEEE 7th Annual Information Technology, Electronics and Mobile …, 2016
Process-induced-strain maximization of nano-scale silicon-on-sapphire high-k gate-dielectric MOSFETs by adjusting device aspect ratio
S Chatterjee
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014
Electrical Characterization in Ultra-Wide Band Gap III-Nitride Heterostructure IMPATT/HEMATT Diodes: A Room-Temperature Sub-Millimeter Wave Power Source
S Chatterjee, M Mukherjee
Journal of Electronic Materials 52 (2), 1552-1563, 2023
Triple gate Field Effect Transistor (TGFET) with voltage control potential wells (VCPWs) along the channel
S Chatterjee, S Ray, SK Dey, S Hazra, S Kar, S Chatterjee
2016 IEEE 7th Annual Information Technology, Electronics and Mobile …, 2016
Performance-enhancing Nanowire-substrates Capable of Boosting Carrier Mobility through Stress-engineering
S Chatterjee
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