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Boyu Zhang
Boyu Zhang
Verified email at buaa.edu.cn
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Year
Failure analysis in magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy
W Zhao, X Zhao, B Zhang, K Cao, L Wang, W Kang, Q Shi, M Wang, ...
Materials 9 (1), 41, 2016
792016
Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices
S Peng, D Zhu, J Zhou, B Zhang, A Cao, M Wang, W Cai, K Cao, W Zhao
Advanced Electronic Materials 5 (8), 1900134, 2019
742019
Influence of heavy metal materials on magnetic properties of Pt/Co/heavy metal tri-layered structures
B Zhang, A Cao, J Qiao, M Tang, K Cao, X Zhao, S Eimer, Z Si, N Lei, ...
Applied Physics Letters 110 (1), 2017
462017
Enhancing domain wall velocity through interface intermixing in W-CoFeB-MgO films with perpendicular anisotropy
X Zhao, B Zhang, N Vernier, X Zhang, M Sall, T Xing, LH Diez, C Hepburn, ...
Applied Physics Letters 115 (12), 2019
442019
Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions
H Cheng, J Chen, S Peng, B Zhang, Z Wang, D Zhu, K Shi, S Eimer, ...
Advanced Electronic Materials 6 (8), 2000271, 2020
312020
Giant Charge-to-Spin Conversion Efficiency in -Based Electron Gas Interface
H Yang, B Zhang, X Zhang, X Yan, W Cai, Y Zhao, J Sun, KL Wang, D Zhu, ...
Physical Review Applied 12 (3), 034004, 2019
312019
All-optical Helicity-Independent Switching State Diagram in -- Alloys
J Wei, B Zhang, M Hehn, W Zhang, G Malinowski, Y Xu, W Zhao, ...
Physical Review Applied 15 (5), 054065, 2021
282021
Optically tunable magnetoresistance effect: From mechanism to novel device application
P Liu, X Lin, Y Xu, B Zhang, Z Si, K Cao, J Wei, W Zhao
Materials 11 (1), 47, 2017
282017
Energy-efficient domain-wall motion governed by the interplay of helicity-dependent optical effect and spin-orbit torque
B Zhang, Y Xu, W Zhao, D Zhu, X Lin, M Hehn, G Malinowski, ...
Physical Review Applied 11 (3), 034001, 2019
192019
Domain-wall motion induced by spin transfer torque delivered by helicity-dependent femtosecond laser
B Zhang, Y Xu, W Zhao, D Zhu, H Yang, X Lin, M Hehn, G Malinowski, ...
Physical Review B 99 (14), 144402, 2019
92019
On/Off Ultra‐Short Spin Current for Single Pulse Magnetization Reversal in a Magnetic Memory Using VO2 Phase Transition
X Fan, M Hehn, G Wei, G Malinowski, T Huang, Y Xu, B Zhang, W Zhang, ...
Advanced Electronic Materials 8 (10), 2200114, 2022
72022
Mo-based perpendicularly magnetized thin films with low damping for fast and low-power consumption magnetic memory
H Cheng, B Zhang, Y Xu, S Lu, Y Yao, R Xiao, K Cao, Y Liu, Z Wang, ...
Science China Physics, Mechanics & Astronomy 65 (8), 287511, 2022
62022
Optoelectronic domain-wall motion for logic computing
B Zhang, D Zhu, Y Xu, X Lin, M Hehn, G Malinowski, W Zhao, S Mangin
Applied Physics Letters 116 (25), 2020
62020
Single‐Shot Laser‐Induced Switching of an Exchange Biased Antiferromagnet
Z Guo, J Wang, G Malinowski, B Zhang, W Zhang, H Wang, C Lyu, Y Peng, ...
Advanced Materials, 2311643, 2024
32024
Tunneling magnetoresistance materials and devices for neuromorphic computing
Y Yao, H Cheng, B Zhang, YIN Jialiang, D Zhu, W Cai, S Li, W Zhao
Materials Futures, 2023
22023
Interfacial property tuning of heavy metal/CoFeB for large density STT-MRAM
W Cai, K Cao, M Wang, S Peng, J Zhou, A Cao, B Zhang, L Wang, ...
2017 17th Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2017
22017
Ultrafast antiferromagnet rearrangement in Co/IrMn/CoGd trilayers
Z Guo, G Malinowski, P Vallobra, Y Peng, Y Xu, S Mangin, W Zhao, ...
Chinese Physics B 32 (8), 087507, 2023
12023
Design of a new voltage-controlled magnetic memory
B Zhang, W Zhao, Y Zhang, Y Zhang
2014 12th IEEE International Conference on Solid-State and Integrated …, 2014
12014
Ultrafast electric pulse generation and detection device and use method thereof
B Zhang, W Cai, C Xiao, X Zheng, WEI Jiaqi, W Zhao
US Patent App. 18/491,989, 2024
2024
Low-loss coplanar waveguide bonding structure and manufacturing method thereof
C Xiao, R Xu, B Zhang, X Zheng, W Cai, WEI Jiaqi, W Zhao
US Patent App. 18/363,984, 2024
2024
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