Partha Mukhopadhyay
Partha Mukhopadhyay
The College of Optics & Photonics (CREOL), University of Central Florida
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Fast growth rate of epitaxial β–Ga2O3 by close coupled showerhead MOCVD
F Alema, B Hertog, A Osinsky, P Mukhopadhyay, M Toporkov, ...
Journal of Crystal Growth 475, 77-82, 2017
Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film
F Alema, B Hertog, O Ledyaev, D Volovik, G Thoma, R Miller, A Osinsky, ...
Physica status solidi (a) 214 (5), 1600688, 2017
Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film
F Alema, B Hertog, P Mukhopadhyay, Y Zhang, A Mauze, A Osinsky, ...
APL Materials 7 (2), 022527, 2019
High-resolution X-ray diffraction analysis of AlxGa12xN/InxGa12xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations
SK Jana, P Mukhopadhyay, S Ghosh, S Kabi, A Bag, R Kumar, D Biswas
Journal of Applied Physics 115 (17), 174507, 2014
Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: tilt dependence on cross-hatch irregularities
R Kumar, A Bag, P Mukhopadhyay, S Das, D Biswas
Applied Surface Science 357, 922-930, 2015
Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film
F Alema, B Hertog, AV Osinsky, P Mukhopadhyay, M Toporkov, ...
Oxide-based Materials and Devices VIII 10105, 242-249, 2017
Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance …
SM Dinara, SK Jana, S Ghosh, P Mukhopadhyay, R Kumar, ...
AIP Advances 5 (4), 047136, 2015
Tin gallium oxide solar-blind photodetectors on sapphire grown by molecular beam epitaxy
P Mukhopadhyay, W Schoenfeld
Applied Optics 58 (13), D22, 2019
Off-state leakage and current collapse in AlGaN/GaN HEMTs: a virtual gate induced by dislocations
S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ...
IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018
Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si (111) on buffer growth conditions by MBE
P Mukhopadhyay, S Chowdhury, A Wowchak, A Dabiran, P Chow, ...
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
Tuning the responsivity of monoclinic solar-blind photodetectors grown by metal organic chemical vapor deposition
I Hatipoglu, P Mukhopadhyay, F Alema, TS Sakthivel, S Seal, A Osinsky, ...
Journal of Physics D: Applied Physics 53 (45), 454001, 2020
High responsivity tin gallium oxide Schottky ultraviolet photodetectors
P Mukhopadhyay, WV Schoenfeld
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 38 (1 …, 2020
2DEG modulation in double quantum well enhancement mode nitride HEMT
A Bag, P Das, R Kumar, P Mukhopadhyay, S Majumdar, S Kabi, D Biswas
Physica E: Low-dimensional Systems and Nanostructures 74, 59-64, 2015
Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer
MK Mahata, S Ghosh, SK Jana, A Chakraborty, A Bag, P Mukhopadhyay, ...
AIP ADVANCES 4, 117120, 2014
Comparative DC characteristic analysis of AlGaN/GaN HEMTs grown on Si (111) and sapphire substrates by MBE
P Mukhopadhyay, A Bag, U Gomes, U Banerjee, S Ghosh, S Kabi, ...
Journal of electronic materials 43 (4), 1263-1270, 2014
Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors
S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ...
Applied Physics Letters 105 (7), 073502, 2014
A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si (1 0 0)
P Mukhopadhyay, R Kumar, S Ghosh, A Chakraborty, A Bag, S Kabi, ...
Journal of Crystal Growth 418, 138-144, 2015
Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon
P Mukhopadhyay, U Banerjee, A Bag, S Ghosh, D Biswas
Solid-State Electronics 104, 101-108, 2015
Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness
R Kumara, P Mukhopadhyay, A Bag, SK Jana, A Chakraborty, S Das, ...
Applied Surface Science 324 (1), 304, 2015
MgZnO grown by molecular beam epitaxy on N-Type B-Ga2O3 for UV Schottky barrier solar-blind photodetectors
M Toporkov, P Mukhopadhyay, H Ali, V Beletsky, F Alema, A Osinsky, ...
Oxide-based Materials and Devices VIII 10105, 250-259, 2017
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