Karsten Horn
Karsten Horn
Fritz Haber Institut Max Planck Gesellschaft
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Cited by
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Controlling the electronic structure of bilayer graphene
T Ohta, A Bostwick, T Seyller, K Horn, E Rotenberg
Science 313 (5789), 951-954, 2006
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
KV Emtsev, A Bostwick, K Horn, J Jobst, GL Kellogg, L Ley, ...
Nature materials 8 (3), 203-207, 2009
Quasiparticle dynamics in graphene
A Bostwick, T Ohta, T Seyller, K Horn, E Rotenberg
Nature physics 3 (1), 36-40, 2007
Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigated<? format?> with Angle-Resolved Photoemission Spectroscopy
T Ohta, A Bostwick, JL McChesney, T Seyller, K Horn, E Rotenberg
Physical Review Letters 98 (20), 206802, 2007
Friction and dissipation in epitaxial graphene films
T Filleter, JL McChesney, A Bostwick, E Rotenberg, KV Emtsev, T Seyller, ...
Physical review letters 102 (8), 086102, 2009
Observation of plasmarons in quasi-freestanding doped graphene
A Bostwick, F Speck, T Seyller, K Horn, M Polini, R Asgari, AH MacDonald, ...
Science 328 (5981), 999-1002, 2010
Extended van Hove singularity and superconducting instability in doped graphene
JL McChesney, A Bostwick, T Ohta, T Seyller, K Horn, J González, ...
Physical review letters 104 (13), 136803, 2010
Scanning tunneling spectroscopy of inhomogeneous electronic structure in monolayer and bilayer graphene on SiC
VW Brar, Y Zhang, Y Yayon, T Ohta, JL McChesney, A Bostwick, ...
Applied Physics Letters 91 (12), 2007
Surface photovoltage effects in photoemission from metal-GaP (110) interfaces: Importance for band bending evaluation
M Alonso, R Cimino, K Horn
Physical review letters 64 (16), 1947, 1990
The adsorption of oxygen on silicon (111) surfaces. I
H Ibach, K Horn, R Dorn, H Lüth
Surface Science 38 (2), 433-454, 1973
Epitaxial graphene: a new material
T Seyller, A Bostwick, KV Emtsev, K Horn, L Ley, JL McChesney, T Ohta, ...
physica status solidi (b) 245 (7), 1436-1446, 2008
Electronic structure of graphene on single-crystal copper substrates
AL Walter, S Nie, A Bostwick, KS Kim, L Moreschini, YJ Chang, ...
Physical Review B—Condensed Matter and Materials Physics 84 (19), 195443, 2011
Quasiparticle transformation during a metal-insulator transition in graphene
A Bostwick, JL McChesney, KV Emtsev, T Seyller, K Horn, SD Kevan, ...
Physical review letters 103 (5), 056404, 2009
Symmetry breaking in few layer graphene films
A Bostwick, T Ohta, JL McChesney, KV Emtsev, T Seyller, K Horn, ...
New Journal of Physics 9 (10), 385, 2007
Morphology of graphene thin film growth on SiC (0001)
T Ohta, F El Gabaly, A Bostwick, JL McChesney, KV Emtsev, AK Schmid, ...
New Journal of Physics 10 (2), 023034, 2008
Induced magnetism of carbon atoms at the graphene/Ni (111) interface
M Weser, Y Rehder, K Horn, M Sicot, M Fonin, AB Preobrajenski, ...
Applied Physics Letters 96 (1), 2010
The formation of an energy gap in graphene on ruthenium by controlling the interface
C Enderlein, YS Kim, A Bostwick, E Rotenberg, K Horn
New Journal of Physics 12 (3), 033014, 2010
Origin of the energy bandgap in epitaxial graphene
E Rotenberg, A Bostwick, T Ohta, JL McChesney, T Seyller, K Horn
Nature materials 7 (4), 258-259, 2008
Role of spin in quasiparticle interference
JI Pascual, G Bihlmayer, YM Koroteev, HP Rust, G Ceballos, ...
Physical review letters 93 (19), 196802, 2004
Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene
KS Kim, AL Walter, L Moreschini, T Seyller, K Horn, E Rotenberg, ...
Nature materials 12 (10), 887-892, 2013
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