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Santashraya Prasad
Santashraya Prasad
Birla Insitute Of technology
Verified email at bitmesra.ac.in
Title
Cited by
Cited by
Year
Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope
S Prasad, AK Dwivedi, A Islam
Journal of Computational Electronics 15 (1), 172-180, 2016
312016
Characterization of AlGaN and GaN based HEMT with AlN interfacial spacer
P Roy, S Jawanpuria, S Prasad, A Islam
2015 fifth international conference on communication systems and network …, 2015
172015
A study on power optimization techniques in psoc
S Singha, AS Singh, S Prasad, A Alam
2019 International Conference on Communication and Signal Processing (ICCSP …, 2019
92019
Pulse width modulator based on second generation current conveyor
A Srinivasulu, MSS Rukmini, S Musala, MP Ram, S Prasad
2014 International Conference on Devices, Circuits and Communications …, 2014
72014
Analysis of breakdown voltage of a field plated High Electron Mobility Transistor
A Chitransh, S Moonka, A Priya, S Prasad, A Sengupta, A Islam
2017 Devices for Integrated Circuit (DevIC), 167-169, 2017
52017
Performance evaluation of CNFET based operational amplifier at technology node beyond 45-nm
MA Kafeel, M Hasan, MS Alam, A Kumar, S Prasad, A Islam
2013 Annual IEEE India Conference (INDICON), 1-5, 2013
42013
Realization and optimization of CNFET based operational amplifier at 32-nm technology node
A Kumar, S Prasad, A Islam
Proceedings of International Conclave ON, 1-4, 2013
32013
High breakdown (958 V) low threshold GaN HEMT
S Prasad, M Guduri, A Islam
2017 International Conference on Multimedia, Signal Processing and …, 2017
22017
Development of HEMT device with surface passivation for a low leakage current and steep subthreshold slope
A Priya, S Moonka, A Chitransh, S Prasad, A Sengupta, A Islam
2017 Devices for Integrated Circuit (DevIC), 364-367, 2017
22017
Analysis of Al0.22Ga0.78As/In0.18Ga0.82As/GaAs Pseudomorphic HEMT device with higher conductivity
S Moonka, A Priya, A Chitransh, S Prasad, A Sengupta, A Islam
2017 Devices for Integrated Circuit (DevIC), 360-363, 2017
22017
Impact of temperature variation on resonant frequency of active grounded inductor-based bandpass filter
S Khanna, D Majumder, V Kumar, S Prasad, A Islam
Indian Journal of Science and Technology, 2016
22016
Characterization of AlInN/GaN based HEMT for Radio Frequency Applications
S Prasad, A Islam
Micro and Nanosystems 15 (1), 55-64, 2023
12023
Comparative analysis and robustness study of logic styles
PK Singh, R Raj, V Kumar, M Pandey, S Prasad, A Islam
Microsystem Technologies 28 (12), 2807-2820, 2022
12022
Process and voltage variation-aware design and analysis of active grounded inductor-based bandpass filter
V Kumar, R Mehra, D Majumder, S Khanna, S Prasad, A Islam
Progress in Intelligent Computing Techniques: Theory, Practice, and …, 2018
12018
Design of a 2.45 GHz Cascode Low Noise Amplifier with л Matching Technique Check for updates
S Kumar, S Saraiyan, A Saurabh, SK Dubey, S Prasad, A Islam
Energy Systems, Drives and Automations: Proceedings of ESDA 2021 1057, 213, 2023
2023
Study and Analysis of AlGaN/GaN-Based HEMT and MOSHEMT Check for updates
S Firdoush, I Mishra, R Xalxo, SK Dubey, S Prasad, A Islam
Energy Systems, Drives and Automations: Proceedings of ESDA 2021 1057, 239, 2023
2023
Y-shaped double-gate high electron mobility transistor for radio frequency applications
S Prasad, A Islam
International Journal of Nanoparticles 14 (2-4), 181-201, 2022
2022
Threshold Voltage Extraction of 220nm FDSOI Device using Linear Extrapolation Method
VK Reddy, M Guduri, NLD Reddy, P Dharani, S Prasad, A Islam
Indian Journal of Science and Technology, 2016
2016
Variation mitigation technique in SRAM cell using adaptive body bias
S Kushwaha, S Prasad, A Islam
2012 International Conference on Communications, Devices and Intelligent …, 2012
2012
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Articles 1–19