| Characterization of nano-powder grown ultra-thin film p-CuO/n-Si hetero-junctions by employing vapour-liquid-solid method for photovoltaic applications J Sultana, A Das, A Das, NR Saha, A Karmakar, S Chattopadhyay Thin Solid Films 612, 331-336, 2016 | 34 | 2016 |
| Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-k gate dielectrics S Chatterjee, BN Chowdhury, A Das, S Chattopadhyay Semiconductor science and technology 28 (12), 125011, 2013 | 27 | 2013 |
| Surface passivation and interface properties of bulk GaAs and epitaxial-GaAs/Ge using atomic layer deposited TiAlO alloy dielectric GK Dalapati, CK Chia, CC Tan, HR Tan, SY Chiam, JR Dong, A Das, ... ACS Applied Materials & Interfaces 5 (3), 949-957, 2013 | 26 | 2013 |
| Ultrathin vapor–liquid–solid grown titanium dioxide-II film on bulk GaAs substrates for advanced metal–oxide–semiconductor device applications A Das, BN Chowdhury, R Saha, S Sikdar, S Bhunia, S Chattopadhyay IEEE Transactions on Electron Devices 65 (4), 1466-1472, 2018 | 21 | 2018 |
| Characterization of epitaxial GaAs MOS capacitors using atomic layer-deposited TiO2/Al2O3 gate stack: study of Ge auto-doping and p-type Zn doping GK Dalapati, TK Shun Wong, Y Li, CK Chia, A Das, C Mahata, H Gao, ... Nanoscale research letters 7, 1-8, 2012 | 14 | 2012 |
| Formation of High‐Pressure Phase of Titanium Dioxide (TiO2‐II) Thin Films by Vapor‐Liquid‐Solid Growth Process on GaAs Substrate A Das, B Nag Chowdhury, R Saha, S Sikdar, J Sultana, G Kumar Dalapati, ... physica status solidi (a) 216 (2), 1800640, 2019 | 12 | 2019 |
| Impact of oxygen diffusion on the performance of HfO2/GaAs metal-oxide-semiconductor field-effect-transistors A Das, S Chattopadhyay, G Kumar Dalapati Advanced Materials Letters 7 (2), 123-129, 2016 | 5 | 2016 |
| Performance investigation of n-ZnO nanowire/p-CuO thin film heterojunction solar cell grown by chemical bath deposition and vapour liquid solid technique S Paul, A Das, J Sultana, A Karmakar, S Chattopadhyay, A Bhattacharyya 2015 6th International Conference on Computers and Devices for Communication …, 2015 | 4 | 2015 |
| Performance improvement of La2O3/p-GaAs MOS capacitor by using Si pasivation layer A Das, S Chattopadhyay, GK Dalapati 2012 5th International Conference on Computers and Devices for Communication …, 2012 | 1 | 2012 |
| Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors A Das, S Chattopadhyay, GK Dalapati, D Chi, MK Kumar 16th International Workshop on Physics of Semiconductor Devices 8549, 724-731, 2012 | 1 | 2012 |
| Effect of atomic layer deposited ultra-thin SiO2 layer on vapour-liquid-solid (VLS) grown high dielectric TiO2 film for Si-based MOS device applications L S., C R., D A. Micro and Nano Letters 16, 71-76, 2021 | | 2021 |
