| Air stable doping and intrinsic mobility enhancement in monolayer molybdenum disulfide by amorphous titanium suboxide encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015 | 195 | 2015 |
| Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy A Roy, HCP Movva, B Satpati, K Kim, R Dey, A Rai, T Pramanik, ... ACS applied materials & interfaces 8 (11), 7396-7402, 2016 | 191 | 2016 |
| Progress in contact, doping and mobility engineering of MoS2: An atomically thin 2D semiconductor A Rai, H Movva, A Roy, D Taneja, S Chowdhury, S Banerjee Crystals 8 (8), 316, 2018 | 109 | 2018 |
| Two-dimensional weak anti-localization in Bi2Te3 thin film grown on Si(111)-(7 × 7) surface by molecular beam epitaxy A Roy, S Guchhait, S Sonde, R Dey, T Pramanik, A Rai, HCP Movva, ... Applied Physics Letters 102 (16), 163118, 2013 | 84 | 2013 |
| A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems CC Hsieh, A Roy, YF Chang, D Shahrjerdi, SK Banerjee Applied Physics Letters 109 (22), 223501, 2016 | 67 | 2016 |
| Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films A Roy, S Guchhait, R Dey, T Pramanik, CC Hsieh, A Rai, SK Banerjee ACS nano 9 (4), 3772-3779, 2015 | 59 | 2015 |
| Experimental evidence of exciton capture by mid-gap defects in CVD grown monolayer MoSe2 K Chen, R Ghosh, X Meng, A Roy, JS Kim, F He, SC Mason, X Xu, JF Lin, ... npj 2D Materials and Applications 1 (1), 15, 2017 | 49 | 2017 |
| Characteristics and mechanism study of cerium oxide based random access memories CC Hsieh, A Roy, A Rai, YF Chang, SK Banerjee Applied Physics Letters 106 (17), 173108, 2015 | 37 | 2015 |
| Strong spin-orbit coupling and Zeeman spin splitting in angle dependent magnetoresistance of Bi2Te3 R Dey, T Pramanik, A Roy, A Rai, S Guchhait, S Sonde, HCP Movva, ... Applied Physics Letters 104 (22), 223111, 2014 | 37 | 2014 |
| Nonpolar Resistive Switching of Multilayer‐hBN‐Based Memories P Zhuang, W Lin, J Ahn, M Catalano, H Chou, A Roy, M Quevedo‐Lopez, ... Advanced Electronic Materials 6 (1), 1900979, 2020 | 32 | 2020 |
| Stacking‐Order‐Driven Optical Properties and Carrier Dynamics in ReS2 Y Zhou, N Maity, A Rai, R Juneja, X Meng, A Roy, Y Zhang, X Xu, JF Lin, ... Advanced Materials 32 (22), 1908311, 2020 | 29 | 2020 |
| Carrier trapping by oxygen impurities in molybdenum diselenide K Chen, A Roy, A Rai, A Valsaraj, X Meng, F He, X Xu, LF Register, ... ACS applied materials & interfaces 10 (1), 1125-1131, 2018 | 27 | 2018 |
| Nanodot to nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si(100) JC Mahato, D Das, RR Juluri, R Batabyal, A Roy, PV Satyam, BN Dev Applied Physics Letters 100 (26), 263117, 2012 | 27 | 2012 |
| Interfacial-oxygen-vacancy mediated doping of MoS2by high-κ dielectrics A Rai, A Valsaraj, HCP Movva, A Roy, E Tutuc, LF Register, SK Banerjee 2015 73rd Annual Device Research Conference (DRC), 189-190, 2015 | 24 | 2015 |
| Interfacial-oxygen-vacancy mediated doping of MoS2by high-κ dielectrics A Rai, A Valsaraj, HCP Movva, A Roy, E Tutuc, LF Register, SK Banerjee 2015 73rd Annual Device Research Conference (DRC), 189-190, 2015 | 24 | 2015 |
| Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides K Chen, A Roy, A Rai, HCP Movva, X Meng, F He, SK Banerjee, Y Wang APL Materials 6 (5), 056103, 2018 | 23 | 2018 |
| Tailored MoS2 nanorods: a simple microwave assisted synthesis S Reshmi, MV Akshaya, B Satpati, A Roy, PK Basu, K Bhattacharjee Materials Research Express 4 (11), 115012, 2017 | 21 | 2017 |
| Surface roughness of ion-bombarded Si (1 0 0) surfaces: roughening and smoothing with the same roughness exponent A Roy, K Bhattacharjee, HP Lenka, DP Mahapatra, BN Dev Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008 | 21 | 2008 |
| Formation of aligned nanosilicide structures in a MBE-grown Au/Si (110) system: a real-time temperature-dependent TEM study UM Bhatta, JK Dash, A Roy, A Rath, PV Satyam Journal of Physics: Condensed Matter 21 (20), 205403, 2009 | 20 | 2009 |
| Two-Dimensional to Three-Dimensional Growth of Transition Metal Diselenides by Chemical Vapor Deposition: Interplay between Fractal, Dendritic, and Compact Morphologies. S Chowdhury, A Roy, I Bodemann, SK Banerjee ACS Applied Materials & Interfaces 12 (13), 15885-15892, 2020 | 17 | 2020 |
Amritesh RaiFront End Process Integration Engineer @ Intel ▪ UT Austin ▪ Ohio StateVerified email at utexas.edu
