| Preparation and characterization of CdS nanoparticles by chemical co-precipitation technique BS Rao, BR Kumar, VR Reddy, TS Rao, G Chalapathi Chalcogenide Lett 8 (3), 177-185, 2011 | 169 | 2011 |
| Electrical properties of Au/polyvinylidene fluoride/n-InP Schottky diode with polymer interlayer VR Reddy Thin Solid Films 556, 300-306, 2014 | 140 | 2014 |
| Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures VR Reddy, MSP Reddy, BP Lakshmi, AA Kumar Journal of alloys and compounds 509 (31), 8001-8007, 2011 | 93 | 2011 |
| Study of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of molybdenum Schottky contacts on n-InP (1 0 0) V Janardhanam, AA Kumar, VR Reddy, PN Reddy Journal of Alloys and Compounds 485 (1-2), 467-472, 2009 | 93 | 2009 |
| Electrical properties and current transport mechanisms of the Au/n-GaN Schottky structure with solution-processed high-k BaTiO3 interlayer VR Reddy, V Manjunath, V Janardhanam, YH Kil, CJ Choi J. Electron. Mater 43 (9), 3499-3507, 2014 | 86 | 2014 |
| XPS study of sputtered alumina thin films N Reddy, P Bera, VR Reddy, N Sridhara, A Dey, C Anandan, AK Sharma Ceramics International 40 (7), 11099-11107, 2014 | 78 | 2014 |
| Tetragonal site of transition metal ions doped sodium phosphate glasses R Ravikumar, VR Reddy, AV Chandrasekhar, BJ Reddy, YP Reddy, ... Journal of alloys and compounds 337 (1-2), 272-276, 2002 | 76 | 2002 |
| Temperature-dependent Schottky barrier parameters of Ni/Au on n-type (001) β-Ga2O3 Schottky barrier diode PRS Reddy, V Janardhanam, KH Shim, VR Reddy, SN Lee, SJ Park, ... Vacuum 171, 109012, 2020 | 71 | 2020 |
| Analysis of the current–voltage characteristics of the Pd/Au Schottky structure on n-type GaN in a wide temperature range M Ravinandan, PK Rao, VR Reddy Semiconductor Science and Technology 24 (3), 035004, 2009 | 68 | 2009 |
| Microstructural, electrical and carrier transport properties of Au/NiO/n-GaN heterojunction with a nickel oxide interlayer VR Reddy, PRS Reddy, IN Reddy, CJ Choi RSC advances 6 (107), 105761-105770, 2016 | 64 | 2016 |
| Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature MSP Reddy, AA Kumar, VR Reddy Thin Solid Films 519 (11), 3844-3850, 2011 | 56 | 2011 |
| Analysis of current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of Ni/Au Schottky contacts on n-type InP SS Naik, VR Reddy Superlattices and Microstructures 48 (3), 330-342, 2010 | 56 | 2010 |
| Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range BP Lakshmi, MSP Reddy, AA Kumar, VR Reddy Current applied physics 12 (3), 765-772, 2012 | 52 | 2012 |
| Schottky Barrier Parameters of Pd/Ti Contacts on N-Type InP Revealed from IVT And CVT Measurements Open Access DS Reddy, MB Reddy, NNK Reddy, VR Reddy Journal of Modern Physics 2, 113-123, 2011 | 52 | 2011 |
| Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer CV Prasad, MSP Reddy, VR Reddy, C Park Applied Surface Science 427, 670-677, 2018 | 51 | 2018 |
| Capacitance–frequency (C–f) and conductance–frequency (G–f) characteristics of Ir/n-InGaN Schottky diode as a function of temperature R Padma, BP Lakshmi, VR Reddy Superlattices and Microstructures 60, 358-369, 2013 | 49 | 2013 |
| Temperature dependency and current transport mechanisms of Pd/V/n-type InP schottky rectifiers S Sankar Naik, V Rajagopal Reddy Advanced Materials Letters 3 (3), 188-196, 2012 | 48 | 2012 |
| Current–voltage–temperature (I–V–T) characteristics of Pd/Au Schottky contacts on n-InP (1 1 1) MB Reddy, AA Kumar, V Janardhanam, VR Reddy, PN Reddy Current Applied Physics 9 (5), 972-977, 2009 | 47 | 2009 |
| Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer MSP Reddy, K Sreenu, VR Reddy, C Park Journal of Materials Science: Materials in Electronics 28 (6), 4847-4855, 2017 | 46 | 2017 |
| Effect of annealing on the electronic parameters of Au/poly (ethylmethacrylate)/n-InP Schottky diode with organic interlayer VR Reddy, A Umapathi, LD Rao Current Applied Physics 13 (8), 1604-1610, 2013 | 44 | 2013 |
