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Dr. Shruti Narayanan
Dr. Shruti Narayanan
DST-NPDF, IIT Madras
Verified email at smail.iitm.ac.in
Title
Cited by
Cited by
Year
Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes
A Shetty, B Roul, S Mukundan, L Mohan, G Chandan, KJ Vinoy, ...
AIP Advances 5 (9), 2015
602015
Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy
S Mukundan, L Mohan, G Chandan, B Roul, SB Krupanidhi
Journal of Applied Physics 116 (20), 2014
432014
Enhanced UV detection by non-polar epitaxial GaN films
S Mukundan, B Roul, A Shetty, G Chandan, L Mohan, SB Krupanidhi
AIP Advances 5 (12), 2015
312015
Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces
B Roul, S Mukundan, G Chandan, L Mohan, SB Krupanidhi
AIP Advances 5 (3), 2015
222015
Trap modulated photoresponse of InGaN/Si isotype heterojunction at zero-bias
G Chandan, S Mukundan, L Mohan, B Roul, SB Krupanidhi
Journal of Applied Physics 118 (2), 2015
192015
High indium non-polar InGaN clusters with infrared sensitivity grown by PAMBE
S Mukundan, L Mohan, G Chandan, B Roul, SB Krupanidhi, S Shinde, ...
AIP Advances 5 (3), 2015
122015
Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE
N Sinha, B Roul, S Mukundan, G Chandan, L Mohan, VM Jali, ...
Materials Research Bulletin 61, 539-543, 2015
102015
Plasmonic enhancement of photocurrent in GaN based UV photodetectors
A Shetty, KJ Sundar, B Roul, S Mukundan, G Chandan, L Mohan, ...
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014
102014
Double Gaussian distribution of barrier height observed in densely packed GaN nanorods over Si (111) heterostructures
L Mohan, G Chandan, S Mukundan, B Roul, SB Krupanidhi
Journal of Applied Physics 116 (23), 2014
92014
Structural and optical characterization of nonpolar (10–10) m-InN/m-GaN epilayers grown by PAMBE
S Mukundan, G Chandan, L Mohan, B Roul, SB Krupanidhi
Journal of Crystal Growth 433, 74-79, 2016
52016
Heterostructures of III-Nitride Semiconductors for Optical and Electronic Applications’
B Roul, G Chandan, S Mukundan, SB Krupanidhi
Epitaxy2018171. Nov 7, 2023
32023
Impact of Nitridation on Structural and Optical Properties of Epitaxial GaN Films Grown on M-Plane Sapphire by PAMBE
S Mukundan, L Mohan, G Chandan, B Roul, SB Krupanidhi
MRS Online Proceedings Library (OPL) 1736, mrsf14-1736-t11-02, 2015
12015
Excimer formation and site selectivity in single pyrene microcrystals
DR Chawdhury, S Narayanan, T Agrawal, PB Bisht
Journal of Luminescence 263, 120084, 2023
2023
Epitaxial Nonpolar III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy
S Mukundan
2018
Growth and Characterization of a-plane In0. 2Ga0. 8N/GaN hetrostructures on r-Sapphire
S Mukundan, L Mohan, G Chandan, B Roul, SB Krupanidhi
MRS Online Proceedings Library (OPL) 1736, mrsf14-1736-t11-03, 2014
2014
Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes
A Shetty, B Roul, S Mukundan, G Chandan, L Mohan, KJ Vinoy, ...
MRS Online Proceedings Library (OPL) 1736, mrsf14-1736-t02-08, 2014
2014
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