| High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ... Applied physics letters 75 (14), 2073-2075, 1999 | 283 | 1999 |
| Vibrational properties of AlN grown on (111)-oriented silicon T Prokofyeva, M Seon, J Vanbuskirk, M Holtz Phys. Rev. B 63, 125313, 2001 | 261* | 2001 |
| Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates Y Zhao, J Hwan Lee, Y Zhu, M Nazari, C Chen, H Wang, A Bernussi, ... Journal of Applied Physics 111 (5), 053533, 2012 | 201 | 2012 |
| Thermal conductivity in metallic nanostructures at high temperature: Electrons, phonons, and the Wiedemann-Franz law N Stojanovic, DHS Maithripala, JM Berg, M Holtz Physical Review B 82 (7), 075418, 2010 | 186 | 2010 |
| Enhanced signal-to-background ratios in voltammetric measurements made at diamond thin-film electrochemical interfaces JW Strojek, MC Granger, GM Swain, T Dallas, MW Holtz Analytical chemistry 68 (13), 2031-2037, 1996 | 171 | 1996 |
| Raman studies of nitrogen incorporation in T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu, S Nikishin, H Temkin Applied physics letters 73 (10), 1409-1411, 1998 | 131 | 1998 |
| Microfabrication and characterization of Teflon AF-coated liquid core waveguide channels in silicon A Datta, IY Eom, A Dhar, P Kuban, R Manor, I Ahmad, S Gangopadhyay, ... IEEE Sensors Journal 3 (6), 788-795, 2003 | 127 | 2003 |
| Raman spectroscopy of carbon materials JR Dennison, M Holtz, G Swain Spectroscopy 11 (8), 1996 | 124 | 1996 |
| Visible and ultraviolet Raman scattering studies of alloys M Holtz, WM Duncan, S Zollner, R Liu Journal of Applied Physics 88 (5), 2523-2528, 2000 | 120 | 2000 |
| Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on and 6H–SiC substrates I Ahmad, M Holtz, NN Faleev, H Temkin Journal of applied physics 95 (4), 1692-1697, 2004 | 117 | 2004 |
| Tunable dual-band terahertz metamaterial bandpass filters Y Zhu, S Vegesna, Y Zhao, V Kuryatkov, M Holtz, Z Fan, M Saed, ... Optics letters 38 (14), 2382-2384, 2013 | 108 | 2013 |
| A two-stage discrete peristaltic micropump JM Berg, R Anderson, M Anaya, B Lahlouh, M Holtz, T Dallas Sensors and Actuators A: Physical 104 (1), 6-10, 2003 | 108 | 2003 |
| AlN/AlGaInN superlattice light-emitting diodes at 280 nm G Kipshidze, V Kuryatkov, K Zhu, B Borisov, M Holtz, S Nikishin, H Temkin Journal of applied physics 93 (3), 1363-1366, 2003 | 108 | 2003 |
| AlGaInN-based ultraviolet light-emitting diodes grown on Si (111) G Kipshidze, V Kuryatkov, B Borisov, M Holtz, S Nikishin, H Temkin Applied physics letters 80 (20), 3682-3684, 2002 | 105 | 2002 |
| Self-heating study of an -based heterostructure field-effect transistor using ultraviolet micro-Raman scattering I Ahmad, V Kasisomayajula, M Holtz, JM Berg, SR Kurtz, CP Tigges, ... Applied Physics Letters 86 (17), 173503, 2005 | 99 | 2005 |
| Raman-scattering depth profile of the structure of ion-implanted GaAs M Holtz, R Zallen, O Brafman, S Matteson Physical Review B 37 (9), 4609, 1988 | 94 | 1988 |
| Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition G Kipshidze, B Yavich, A Chandolu, J Yun, V Kuryatkov, I Ahmad, ... Applied Physics Letters 86 (3), 033104, 2005 | 93 | 2005 |
| High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ... Applied physics letters 75 (4), 484-486, 1999 | 92 | 1999 |
| Si-doped layers grown by molecular beam epitaxy with ammonia B Borisov, V Kuryatkov, Y Kudryavtsev, R Asomoza, S Nikishin, DY Song, ... Applied physics letters 87 (13), 132106, 2005 | 91 | 2005 |
| Ignition studies of energetic nanocomposites L Menon, S Patibandla, KB Ram, SI Shkuratov, D Aurongzeb, M Holtz, ... Applied physics letters 84 (23), 4735-4737, 2004 | 91 | 2004 |
Sergey NikishinProfessor of Electrical Engineering, Texas Tech UniversityVerified email at ttu.edu
