Mark Holtz, Ph.D.
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High quality GaN grown on Si (111) by gas source molecular beam epitaxy with ammonia
SA Nikishin, NN Faleev, VG Antipov, S Francoeur, L Grave de Peralta, ...
Applied physics letters 75 (14), 2073-2075, 1999
Vibrational properties of AlN grown on (111)-oriented silicon
T Prokofyeva, M Seon, J Vanbuskirk, M Holtz
Phys. Rev. B 63, 125313, 2001
Structural, electrical, and terahertz transmission properties of VO2 thin films grown on c-, r-, and m-plane sapphire substrates
Y Zhao, J Hwan Lee, Y Zhu, M Nazari, C Chen, H Wang, A Bernussi, ...
Journal of Applied Physics 111 (5), 053533, 2012
Thermal conductivity in metallic nanostructures at high temperature: Electrons, phonons, and the Wiedemann-Franz law
N Stojanovic, DHS Maithripala, JM Berg, M Holtz
Physical Review B 82 (7), 075418, 2010
Enhanced signal-to-background ratios in voltammetric measurements made at diamond thin-film electrochemical interfaces
JW Strojek, MC Granger, GM Swain, T Dallas, MW Holtz
Analytical chemistry 68 (13), 2031-2037, 1996
Raman studies of nitrogen incorporation in
T Prokofyeva, T Sauncy, M Seon, M Holtz, Y Qiu, S Nikishin, H Temkin
Applied physics letters 73 (10), 1409-1411, 1998
Microfabrication and characterization of Teflon AF-coated liquid core waveguide channels in silicon
A Datta, IY Eom, A Dhar, P Kuban, R Manor, I Ahmad, S Gangopadhyay, ...
IEEE Sensors Journal 3 (6), 788-795, 2003
Raman spectroscopy of carbon materials
JR Dennison, M Holtz, G Swain
Spectroscopy 11 (8), 1996
Visible and ultraviolet Raman scattering studies of alloys
M Holtz, WM Duncan, S Zollner, R Liu
Journal of Applied Physics 88 (5), 2523-2528, 2000
Dependence of the stress–temperature coefficient on dislocation density in epitaxial GaN grown on and 6H–SiC substrates
I Ahmad, M Holtz, NN Faleev, H Temkin
Journal of applied physics 95 (4), 1692-1697, 2004
Tunable dual-band terahertz metamaterial bandpass filters
Y Zhu, S Vegesna, Y Zhao, V Kuryatkov, M Holtz, Z Fan, M Saed, ...
Optics letters 38 (14), 2382-2384, 2013
A two-stage discrete peristaltic micropump
JM Berg, R Anderson, M Anaya, B Lahlouh, M Holtz, T Dallas
Sensors and Actuators A: Physical 104 (1), 6-10, 2003
AlN/AlGaInN superlattice light-emitting diodes at 280 nm
G Kipshidze, V Kuryatkov, K Zhu, B Borisov, M Holtz, S Nikishin, H Temkin
Journal of applied physics 93 (3), 1363-1366, 2003
AlGaInN-based ultraviolet light-emitting diodes grown on Si (111)
G Kipshidze, V Kuryatkov, B Borisov, M Holtz, S Nikishin, H Temkin
Applied physics letters 80 (20), 3682-3684, 2002
Self-heating study of an -based heterostructure field-effect transistor using ultraviolet micro-Raman scattering
I Ahmad, V Kasisomayajula, M Holtz, JM Berg, SR Kurtz, CP Tigges, ...
Applied Physics Letters 86 (17), 173503, 2005
Raman-scattering depth profile of the structure of ion-implanted GaAs
M Holtz, R Zallen, O Brafman, S Matteson
Physical Review B 37 (9), 4609, 1988
Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition
G Kipshidze, B Yavich, A Chandolu, J Yun, V Kuryatkov, I Ahmad, ...
Applied Physics Letters 86 (3), 033104, 2005
High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia
SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
Si-doped layers grown by molecular beam epitaxy with ammonia
B Borisov, V Kuryatkov, Y Kudryavtsev, R Asomoza, S Nikishin, DY Song, ...
Applied physics letters 87 (13), 132106, 2005
Ignition studies of energetic nanocomposites
L Menon, S Patibandla, KB Ram, SI Shkuratov, D Aurongzeb, M Holtz, ...
Applied physics letters 84 (23), 4735-4737, 2004
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