| Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy W Shin, KK Min, JH Bae, J Yim, D Kwon, Y Kim, J Yu, J Hwang, BG Park, ... Nanoscale 14 (6), 2177-2185, 2022 | 25 | 2022 |
| Ferroelectricity of pure HfOx in metal-ferroelectric-insulator-semiconductor stacks and its memory application KK Min, J Yu, Y Kim, CS Kim, T Jang, S Hwang, H Kim, JH Lee, D Kwon, ... Applied Surface Science 573, 151566, 2022 | 16 | 2022 |
| Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al2O3/HfO2/SiO2/Al2O3/SiO2/Si structure YS Song, T Jang, KK Min, MH Baek, J Yu, Y Kim, JH Lee, BG Park Japanese Journal of Applied Physics 59 (6), 061006, 2020 | 14 | 2020 |
| Interlayer engineering for enhanced ferroelectric tunnel junction operations in HfO x-based metal-ferroelectric-insulator-semiconductor stack KK Min, J Yu, Y Kim, JH Lee, D Kwon, BG Park Nanotechnology 32 (49), 495203, 2021 | 12 | 2021 |
| Lamination method for improved polarization-leakage current relation in HfO2-based metal/ferroelectric/insulator/semiconductor structure Y Kim, KK Min, J Yu, D Kwon, BG Park Semiconductor Science and Technology 37 (4), 045001, 2022 | 11 | 2022 |
| A novel physical unclonable function (PUF) using 16× 16 pure-HfO x ferroelectric tunnel junction array for security applications J Yu, KK Min, Y Kim, S Kim, S Hwang, TH Kim, C Kim, H Kim, JH Lee, ... Nanotechnology 32 (48), 485202, 2021 | 8 | 2021 |
| Impact of interlayer insulator formation methods on HfOx ferroelectricity in the metal–ferroelectric–insulator–semiconductor stack KK Min, SJ Kwon, Y Kim, J Yu, JH Lee, BG Park, D Kwon Applied Physics Letters 120 (1), 2022 | 5 | 2022 |
| Synaptic device with high rectification ratio resistive switching and its impact on spiking neural network CS Kim, T Kim, KK Min, Y Kim, S Kim, BG Park IEEE Transactions on Electron Devices 68 (4), 1610-1615, 2021 | 4 | 2021 |
| Damage-Induced Ferroelectricity in HfOx-Based Thin Film KK Min, HM Kim, Y Kim, C Kim, J Yu, JH Lee, BG Park, D Kwon IEEE Electron Device Letters 43 (5), 713-716, 2022 | 3 | 2022 |
| An Area Efficient Adaptive Neuron Circuit Exploiting Tunnel Field-Effect Transistor Y Kim, T Kim, MH Beak, T Jang, YS Song, B Jeon, BG Park 대한전자공학회 학술대회, 71-73, 2019 | 3 | 2019 |
| Neurons with Captive Synaptic Devices for Temperature Robust Spiking Neural Networks K Park, S Kim, MH Baek, B Jeon, YW Kim, WY Choi IEEE Electron Device Letters, 2023 | | 2023 |
| Investigation of Poly-Si TFT Based U-shaped Channel Synaptic Device D Ryu, Y Kim, T Jang, S Song, B Jeon, BG Park 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022 | | 2022 |
| Analog-Digital Hybrid Neuron with Up/Down Counter for Neuromorphic System Y Kim, B Jeon, K Park, BG Park 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022 | | 2022 |
| Guideline of optimum interfacial layers in metal-ferroelectric-insulator-semiconductor structure for gate stack and ferroelectric tunnel junction J Yu, KK Min, Y Kim, D Kwon, BG Park 2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021 | | 2021 |
| Neuron Circuit with Improved Synaptic Current Summation Performance Using Ni / SiNx / n⁺-Si RRAM as Synaptic Devices Y Kim, S Hwang, BG Park 대한전자공학회 학술대회, 36-40, 2020 | | 2020 |
