Dr. Nagaboopathy Mohan
Dr. Nagaboopathy Mohan
Department of Science and Technology
Verified email at gov.in
Cited by
Cited by
Microwave irradiation-assisted deposition of Ga2O3 on III-nitrides for deep-UV optoelectronics
DNN Piyush Jaiswal, Usman Ul Muazzam, Anamika Singh Pratiyush, Nagaboopathy ...
Applied Physics letters 112 (2), 021105, 2018
An early in-situ stress signature of the AlN-Si pre-growth interface for successful integration of nitrides with (111) Si
H Chandrasekar, N Mohan, A Bardhan, KN Bhat, N Bhat, N Ravishankar, ...
Applied Physics Letters 103 (21), 211902, 2013
Integrating AlGaN/GaN high electron mobility transistor with Si: A comparative study of integration schemes
N Mohan, Manikant, R Soman, S Raghavan
Journal of Applied Physics 118 (13), 135302, 2015
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By O Based Gate Stack Engineering
SD Gupta, A Soni, V Joshi, J Kumar, R Sengupta, H Khand, B Shankar, ...
IEEE Transactions on Electron Devices 66 (6), 2544-2550, 2019
Self-assembled gold nanofilms as a simple, recoverable and recyclable catalyst for nitro-reduction
M Mohan, N Mohan, DK Chand
Journal of Materials Chemistry A 3 (42), 21167-21177, 2015
Vertical current transport in AlGaN/GaN HEMTs on silicon: Experimental investigation and analytical model
N Remesh, N Mohan, S Kumar, S Prabhu, I Guiney, CJ Humphreys, ...
IEEE Transactions on Electron Devices 66 (1), 613-618, 2018
Synergistic effect of reactor chemistry and compressive stress on dislocation bending during GaN growth
M Nagaboopathy, N Ravishankar, S Raghavan
Applied Physics Letters 103 (4), 041912, 2013
Single-pulse chemical shock tube for ignition delay measurements
M Nagaboopathy, C Vijayanand, G Hegde, KPJ Reddy, E Arunan
Current science, 78-82, 2008
The role of surface roughness on dislocation bending and stress evolution in low mobility AlGaN films during growth
A Bardhan, N Mohan, H Chandrasekar, P Ghosh, DV Sridhara Rao, ...
Journal of Applied Physics 123 (16), 165108, 2018
Trap assisted avalanche instability and safe operating area concerns in AlGaN/GaN HEMTs
B Shankar, A Soni, M Singh, R Soman, H Chandrasekar, N Mohan, ...
2017 IEEE International Reliability Physics Symposium (IRPS), WB-5.1-WB-5.5, 2017
On the ESD behavior of AlGaN/GaN Schottky diodes and trap assisted failure mechanism
B Shankar, R Sengupta, SD Gupta, A Soni, N Mohan, N Bhat, ...
2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-6, 2017
Optimum Carbon Concentration in GaN-on-Silicon for Breakdown Enhancement in AlGaN/GaN HEMTs
N Remesh, N Mohan, S Raghavan, R Muralidharan, DN Nath
IEEE Transactions on Electron Devices, 2020
Dislocation bending and stress evolution in Mg-doped GaN films on Si substrates
R Soman, N Mohan, H Chandrasekar, N Bhat, S Raghavan
Journal of Applied Physics 124 (24), 245104, 2018
Wafer-scale epitaxial germanium (100),(111),(110) films on silicon using liquid phase crystallization
S Chaurasia, N Mohan, S Raghavan, S Avasthi
AIP Advances 8 (7), 075010, 2018
Curvature management in buffer layer for device quality GaN growth on Si (111)
A Bardhan, N Mohan, R Soman, Manikant, S Raghavan
IETE Technical Review 33 (1), 82-87, 2016
Structure and morphology studies of chromium film at elevated temperature in hypersonic environment
GM Hegde, V Kulkarni, M Nagaboopathy, KPJ Reddy
Bulletin of Materials Science 35 (3), 341-345, 2012
Discovery of carbon nanotubes in sixth century BC potteries from Keeladi, India
M Kokarneswaran, P Selvaraj, T Ashokan, S Perumal, P Sellappan, ...
Scientific Reports 10 (1), 1-6, 2020
Ignition delay studies on hydrocarbon fuel with and without additives
M Nagaboopathy, G Hegde, KPJ Reddy, C Vijayanand, M Agarwal, ...
Shock Waves, 745-750, 2009
2DEG behavior of AlGaN/GaN HEMTs on various transition buffers
Manikant, N Mohan, R Soman, H Chandrasaker, S Raghavan
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on, 1-4, 2014
Platform of large metal nitride islands with lateral orientations and low-defect density
S Raghavan, H Chandrasekar, N Mohan, D Shakthivel
US Patent 10,854,719, 2020
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