| Catastrophic failure and fault-tolerant design of IGBT power electronic converters-an overview R Wu, F Blaabjerg, H Wang, M Liserre, F Iannuzzo IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society …, 2013 | 216 | 2013 |
| A 3-D-lumped thermal network model for long-term load profiles analysis in high-power IGBT modules AS Bahman, K Ma, P Ghimire, F Iannuzzo, F Blaabjerg IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3 …, 2016 | 132 | 2016 |
| High-voltage, high-performance switch using series-connected IGBTs C Abbate, G Busatto, F Iannuzzo IEEE Transactions on Power Electronics 25 (9), 2450-2459, 2010 | 123 | 2010 |
| Reliability oriented design tool for the new generation of grid connected PV-inverters NC Sintamarean, F Blaabjerg, H Wang, F Iannuzzo, P de Place Rimmen IEEE Transactions on Power Electronics 30 (5), 2635-2644, 2014 | 112 | 2014 |
| A temperature-dependent thermal model of IGBT modules suitable for circuit-level simulations R Wu, H Wang, KB Pedersen, K Ma, P Ghimire, F Iannuzzo, F Blaabjerg IEEE Transactions on Industry Applications 52 (4), 3306-3314, 2016 | 104 | 2016 |
| IGBT junction temperature measurement via peak gate current N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2016 | 102 | 2016 |
| IGBT junction temperature measurement via peak gate current N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2016 | 102 | 2016 |
| A short-circuit safe operation area identification criterion for SiC MOSFET power modules PD Reigosa, F Iannuzzo, H Luo, F Blaabjerg IEEE Transactions on Industry Applications 53 (3), 2880-2887, 2016 | 82 | 2016 |
| IR camera validation of IGBT junction temperature measurement via peak gate current N Baker, L Dupont, S Munk-Nielsen, F Iannuzzo, M Liserre IEEE Transactions on Power Electronics 32 (4), 3099-3111, 2017 | 67 | 2017 |
| A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis L Ceccarelli, PD Reigosa, F Iannuzzo, F Blaabjerg Microelectronics Reliability 76, 272-276, 2017 | 61 | 2017 |
| Physical CAD model for high-voltage IGBTs based on lumped-charge approach F Iannuzzo, G Busatto IEEE Transactions on Power Electronics 19 (4), 885-893, 2004 | 59 | 2004 |
| Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation UM Choi, F Blaabjerg, F Iannuzzo, S Jørgensen Microelectronics Reliability 55 (9-10), 2022-2026, 2015 | 54 | 2015 |
| Design of low-inductance switching power cell for GaN HEMT based inverter E Gurpinar, F Iannuzzo, Y Yang, A Castellazzi, F Blaabjerg IEEE Transactions on Industry Applications 54 (2), 1592-1601, 2017 | 50 | 2017 |
| Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations UM Choi, F Blaabjerg, S Jørgensen, F Iannuzzo, H Wang, C Uhrenfeldt, ... Microelectronics Reliability 64, 403-408, 2016 | 48 | 2016 |
| Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions H Luo, F Iannuzzo, F Blaabjerg, M Turnaturi, E Mattiuzzo 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2506-2511, 2017 | 44 | 2017 |
| Online junction temperature measurement via internal gate resistance during turn-on N Baker, S Munk-Nielsen, M Liserre, F Iannuzzo 2014 16th European conference on power electronics and applications, 1-10, 2014 | 44 | 2014 |
| Series connection of high power IGBT modules for traction applications C Abbate, G Busatto, L Fratelli, F Iannuzzo, B Cascone, G Giannini 2005 European Conference on Power Electronics and Applications, 8 pp.-P. 8, 2005 | 43 | 2005 |
| Instabilities in silicon power devices: A review of failure mechanisms in modern power devices F Iannuzzo, C Abbate, G Busatto IEEE Industrial Electronics Magazine 8 (3), 28-39, 2014 | 42 | 2014 |
| Role of threshold voltage shift in highly accelerated power cycling tests for SiC MOSFET modules H Luo, F Iannuzzo, M Turnaturi IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019 | 41 | 2019 |
| Enabling junction temperature estimation via collector-side thermo-sensitive electrical parameters through emitter stray inductance in high-power IGBT modules H Luo, W Li, F Iannuzzo, X He, F Blaabjerg IEEE Transactions on Industrial Electronics 65 (6), 4724-4738, 2017 | 41 | 2017 |
Frede BlaabjergProfessor in Power Electronics, Villum Investigator, Aalborg University, DenmarkVerified email at et.aau.dk
