| Improved performance of a junctionless tunnel field effect transistor with a Si and SiGe heterostructure for ultra low power applications PK Asthana, Y Goswami, S Basak, SB Rahi, B Ghosh RSC Advances 5 (60), 48779-48785, 2015 | 39 | 2015 |
| Leakage current reduction in junctionless tunnel FET using a lightly doped source S Basak, PK Asthana, Y Goswami, B Ghosh Applied Physics A 118, 1527-1533, 2015 | 30 | 2015 |
| Junctionless tunnel field effect transistor with nonuniform doping Y Goswami, P Asthana, S Basak, B Ghosh International Journal of Nanoscience 14 (03), 1450025, 2015 | 7 | 2015 |
| Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor S Basak, PK Asthana, Y Goswami, B Ghosh Journal of Semiconductors 35 (11), 114001, 2014 | 4 | 2014 |
| Performance Improvement in Nanoscale Ge–GaAs Heterojunction Junctionless Tunnel FET Using a Dual Material Gate B Ghosh, S Basak, P Kumar Asthana Journal of Low Power Electronics 10 (3), 354-360, 2014 | 2 | 2014 |
| Effect of traps on the performance of nanowire Si Junctionless tunnel FET S Basak, B Ghosh Journal of Low Power Electronics 10 (4), 629-634, 2014 | 1 | 2014 |
| Ultra Thin Body Single Gate Nanoscale Dopingless Si: Ge Heterostructure Junctionless Tunnel Field Effect Transistor PK Asthana, BK Pal, Y Goswami, S Basak, B Ghosh Journal of Advanced Physics 3 (3), 205-208, 2014 | 1 | 2014 |
| A novel uniformly doped barrier modulated ultra-deep-submicron poly-Si thin film transistor with very low subthreshold slope PK Asthana, Y Goswami, S Basak, B Ghosh Semiconductor Science and Technology 29 (7), 075017, 2014 | 1 | 2014 |
Yogesh GoswamiIndian Institute of Technology KanpurVerified email at iitkalumni.org
