Jacob H. Leach
Jacob H. Leach
Kyma Technologies
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Ultrawide‐bandgap semiconductors: research opportunities and challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
Universal phonon mean free path spectra in crystalline semiconductors at high temperature
JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen
Scientific reports 3 (1), 2963, 2013
High electron mobility in nearly lattice-matched AlInN∕ AlN∕ GaN heterostructure field effect transistors
J Xie, X Ni, M Wu, JH Leach, Ü Özgür, H Morkoç
Applied Physics Letters 91 (13), 2007
Thermal conductivity of GaN, , and SiC from 150 K to 850 K
Q Zheng, C Li, A Rai, JH Leach, DA Broido, DG Cahill
Physical Review Materials 3 (1), 014601, 2019
High-k Oxide Field-Plated Vertical (001) β-Ga2O3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2
S Roy, A Bhattacharyya, P Ranga, H Splawn, J Leach, S Krishnamoorthy
IEEE Electron Device Letters 42 (8), 1140-1143, 2021
Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films
JH Leach, K Udwary, J Rumsey, G Dodson, H Splawn, KR Evans
APL Materials 7 (2), 2019
The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures
A Teke, S Gökden, R Tülek, JH Leach, Q Fan, J Xie, Ü Özgür, H Morkoç, ...
New Journal of Physics 11 (6), 063031, 2009
Small signal equivalent circuit modeling for AlGaN/GaN HFET: Hybrid extraction method for determining circuit elements of AlGaN/GaN HFET
Q Fan, JH Leach, H Morkoc
Proceedings of the IEEE 98 (7), 1140-1150, 2010
Thermal properties of AlGaN/GaN HFETs on bulk GaN substrates
N Killat, M Montes, JW Pomeroy, T Paskova, KR Evans, J Leach, X Li, ...
IEEE Electron device letters 33 (3), 366-368, 2012
Evaluation of the concentration of point defects in GaN
MA Reshchikov, A Usikov, H Helava, Y Makarov, V Prozheeva, ...
Scientific Reports 7 (1), 9297, 2017
On the accurate determination of absorption coefficient from reflectanceand transmittance measurements: application to Fe-doped GaN
DC Look, JH Leach
Journal of Vacuum Science & Technology B 34 (4), 2016
Ga2O3-on-SiC Composite Wafer for Thermal Management of Ultrawide Bandgap Electronics
Y Song, D Shoemaker, JH Leach, C McGray, HL Huang, A Bhattacharyya, ...
ACS Applied Materials & Interfaces 13 (34), 40817-40829, 2021
Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels
A Matulionis, J Liberis, E Šermukšnis, J Xie, JH Leach, M Wu, H Morkoç
Semiconductor science and technology 23 (7), 075048, 2008
Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers
J Xie, JH Leach, X Ni, M Wu, R Shimada, Ü Özgür, H Morkoç
Applied Physics Letters 91 (26), 2007
Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons
JH Leach, CY Zhu, M Wu, X Ni, X Li, J Xie, Ü Özgür, H Morkoç, J Liberis, ...
Applied Physics Letters 95 (22), 2009
Status of reliability of GaN-based heterojunction field effect transistors
JH Leach, H Morkoc
Proceedings of the IEEE 98 (7), 1127-1139, 2010
Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures–theory and experiment
PP Paskov, M Slomski, JH Leach, JF Muth, T Paskova
AIP advances 7 (9), 2017
Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields
L Ardaravičius, M Ramonas, J Liberis, O Kiprijanovič, A Matulionis, J Xie, ...
Journal of Applied Physics 106 (7), 2009
The impact of film thickness and substrate surface roughness on the thermal resistance of aluminum nitride nucleation layers
Z Su, JP Freedman, JH Leach, EA Preble, RF Davis, JA Malen
Journal of Applied Physics 113 (21), 2013
The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy
S Doğan, D Johnstone, F Yun, S Sabuktagin, J Leach, AA Baski, ...
Applied physics letters 85 (9), 1547-1549, 2004
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