Rajan Pandey
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Effect of band-to-band tunneling on junctionless transistors
S Gundapaneni, M Bajaj, RK Pandey, KVRM Murali, S Ganguly, ...
IEEE Transactions on Electron Devices 59 (4), 1023-1029, 2012
A Tunnel FET forScaling Below 0.6 V With a CMOS-Comparable Performance
R Asra, M Shrivastava, KVRM Murali, RK Pandey, H Gossner, VR Rao
IEEE Transactions on Electron Devices 58 (7), 1855-1863, 2011
Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
A Konar, J Mathew, K Nayak, M Bajaj, RK Pandey, S Dhara, K Murali, ...
Nano letters 15 (3), pp 1684–1690, 2015
Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs
S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ...
2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014
A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs
N Goel, S Mukhopadhyay, N Nanaware, S De, RK Pandey, K Murali, ...
2014 IEEE International Reliability Physics Symposium, 6A. 4.1-6A. 4.12, 2014
Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs
RK Pandey, KVRM Murali, SS Furkay, PJ Oldiges, EJ Nowak
IEEE transactions on electron devices 57 (9), 2098-2105, 2010
Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application
CH Lee, H Kim, P Jamison, RG Southwick, S Mochizuki, K Watanabe, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices
RK Pandey, R Sathiyanarayanan, U Kwon, V Narayanan, K Murali
Journal of Applied Physics 114 (3), 034505, 2013
Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations
S Mahapatra, S De, K Joshi, S Mukhopadhyay, RK Pandey, K Murali
IEEE electron device letters 34 (8), 963-965, 2013
Ab initio study of metal grain orientation-dependent work function and its impact on FinFET variability
S Agarwal, RK Pandey, JB Johnson, A Dixit, M Bajaj, SS Furkay, ...
IEEE transactions on electron devices 60 (9), 2728-2733, 2013
Simulation of x-ray absorption near-edge spectra and x-ray fluorescence spectra of optically excited molecules
RK Pandey, S Mukamel
The Journal of chemical physics 124 (9), 094106, 2006
Self-capacitance of a quantum dot: Dependence on the shape of the confining potential
V Ranjan, RK Pandey, MK Harbola, VA Singh
Physical Review B 65 (4), 045311, 2002
Process optimizations for NBTI/PBTI for future replacement metal gate technologies
BP Linder, A Dasgupta, T Ando, E Cartier, U Kwon, R Southwick, M Wang, ...
2016 IEEE International Reliability Physics Symposium (IRPS), 4B-1-1-4B-1-5, 2016
Semiconductor device with a stoichiometric gradient
M Bajaj, GW Burr, KVRM Murali, RK Pandey, R Sathiyanarayanan, ...
US Patent 9,589,635, 2017
Effective Work Function Modulation by Metal Thickness and Nitrogen Ratio for a Last Approach CMOS Gate
C Ortolland, U Kwon, KVRM Murali, EJ Nowak, RK Pandey
US Patent App. 13/253,430, 2013
Simulation of X-ray absorption near edge spectra of organometallic compounds in the ground and optically excited states
RK Pandey, S Mukamel
The Journal of Physical Chemistry A 111 (5), 805-816, 2007
Helium-like donors in semiconductor quantum dots
RK Pandey, MK Harbola, VA Singh
Journal of Physics: Condensed Matter 16 (10), 1769, 2004
Gate strain induced work function engineering
M Bajaj, KVRM Murali, R Nayak, EJ Nowak, RK Pandey
US Patent 9,105,498, 2015
On the Origin of Steep IV Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices
A Padilla, GW Burr, RS Shenoy, KV Raman, DS Bethune, RM Shelby, ...
Electron Devices, IEEE Transactions on 62 (3), 963 - 971, 2015
Shallow–deep transitions of neutral and charged donor states in semiconductor quantum dots
RK Pandey, MK Harbola, VA Singh
Physical Review B 70 (19), 193308, 2004
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