| Effect of band-to-band tunneling on junctionless transistors S Gundapaneni, M Bajaj, RK Pandey, KVRM Murali, S Ganguly, ... IEEE Transactions on Electron Devices 59 (4), 1023-1029, 2012 | 206 | 2012 |
| A Tunnel FET forScaling Below 0.6 V With a CMOS-Comparable Performance R Asra, M Shrivastava, KVRM Murali, RK Pandey, H Gossner, VR Rao IEEE Transactions on Electron Devices 58 (7), 1855-1863, 2011 | 172 | 2011 |
| Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors A Konar, J Mathew, K Nayak, M Bajaj, RK Pandey, S Dhara, K Murali, ... Nano letters 15 (3), pp 1684–1690, 2015 | 52 | 2015 |
| Trap generation in IL and HK layers during BTI/TDDB stress in scaled HKMG N and P MOSFETs S Mukhopadhyay, K Joshi, V Chaudhary, N Goel, S De, RK Pandey, ... 2014 IEEE International Reliability Physics Symposium, GD. 3.1-GD. 3.11, 2014 | 40 | 2014 |
| A comprehensive DC/AC model for ultra-fast NBTI in deep EOT scaled HKMG p-MOSFETs N Goel, S Mukhopadhyay, N Nanaware, S De, RK Pandey, K Murali, ... 2014 IEEE International Reliability Physics Symposium, 6A. 4.1-6A. 4.12, 2014 | 31 | 2014 |
| Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs RK Pandey, KVRM Murali, SS Furkay, PJ Oldiges, EJ Nowak IEEE transactions on electron devices 57 (9), 2098-2105, 2010 | 29 | 2010 |
| Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application CH Lee, H Kim, P Jamison, RG Southwick, S Mochizuki, K Watanabe, ... 2016 IEEE Symposium on VLSI Technology, 1-2, 2016 | 28 | 2016 |
| Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices RK Pandey, R Sathiyanarayanan, U Kwon, V Narayanan, K Murali Journal of Applied Physics 114 (3), 034505, 2013 | 25 | 2013 |
| Understanding process impact of hole traps and NBTI in HKMG p-MOSFETs using measurements and atomistic simulations S Mahapatra, S De, K Joshi, S Mukhopadhyay, RK Pandey, K Murali IEEE electron device letters 34 (8), 963-965, 2013 | 23 | 2013 |
| Ab initio study of metal grain orientation-dependent work function and its impact on FinFET variability S Agarwal, RK Pandey, JB Johnson, A Dixit, M Bajaj, SS Furkay, ... IEEE transactions on electron devices 60 (9), 2728-2733, 2013 | 22 | 2013 |
| Simulation of x-ray absorption near-edge spectra and x-ray fluorescence spectra of optically excited molecules RK Pandey, S Mukamel The Journal of chemical physics 124 (9), 094106, 2006 | 19 | 2006 |
| Self-capacitance of a quantum dot: Dependence on the shape of the confining potential V Ranjan, RK Pandey, MK Harbola, VA Singh Physical Review B 65 (4), 045311, 2002 | 16 | 2002 |
| Process optimizations for NBTI/PBTI for future replacement metal gate technologies BP Linder, A Dasgupta, T Ando, E Cartier, U Kwon, R Southwick, M Wang, ... 2016 IEEE International Reliability Physics Symposium (IRPS), 4B-1-1-4B-1-5, 2016 | 15 | 2016 |
| Semiconductor device with a stoichiometric gradient M Bajaj, GW Burr, KVRM Murali, RK Pandey, R Sathiyanarayanan, ... US Patent 9,589,635, 2017 | 12 | 2017 |
| Effective Work Function Modulation by Metal Thickness and Nitrogen Ratio for a Last Approach CMOS Gate C Ortolland, U Kwon, KVRM Murali, EJ Nowak, RK Pandey US Patent App. 13/253,430, 2013 | 12 | 2013 |
| Simulation of X-ray absorption near edge spectra of organometallic compounds in the ground and optically excited states RK Pandey, S Mukamel The Journal of Physical Chemistry A 111 (5), 805-816, 2007 | 12 | 2007 |
| Helium-like donors in semiconductor quantum dots RK Pandey, MK Harbola, VA Singh Journal of Physics: Condensed Matter 16 (10), 1769, 2004 | 12 | 2004 |
| Gate strain induced work function engineering M Bajaj, KVRM Murali, R Nayak, EJ Nowak, RK Pandey US Patent 9,105,498, 2015 | 11 | 2015 |
| On the Origin of Steep IV Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices A Padilla, GW Burr, RS Shenoy, KV Raman, DS Bethune, RM Shelby, ... Electron Devices, IEEE Transactions on 62 (3), 963 - 971, 2015 | 11 | 2015 |
| Shallow–deep transitions of neutral and charged donor states in semiconductor quantum dots RK Pandey, MK Harbola, VA Singh Physical Review B 70 (19), 193308, 2004 | 11 | 2004 |
Kota MuraliIBMVerified email at in.ibm.com
