Anirban Bhattacharyya
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Deep ultraviolet emitting AlGaN quantum wells with high internal quantum efficiency
A Bhattacharyya, TD Moustakas, L Zhou, DJ Smith, W Hug
Applied Physics Letters 94 (18), 181907, 2009
Ultraviolet detection using TiO2 nanowire array with Ag Schottky contact
P Chinnamuthu, JC Dhar, A Mondal, A Bhattacharyya, NK Singh
Journal of Physics D: Applied Physics 45 (13), 135102, 2012
Ultrafast all-optical switching with low saturation energy via intersubband transitions in GaN/AlN quantum-well waveguides
Y Li, A Bhattacharyya, C Thomidis, TD Moustakas, R Paiella
Opt. Express 15 (26), 17922-17927, 2007
Efficient p-type doping of GaN films by plasma-assisted molecular beam epitaxy
A Bhattacharyya, W Li, J Cabalu, TD Moustakas, DJ Smith, RL Hervig
Applied physics letters 85 (21), 4956-4958, 2004
Measurements and modelling of the barrier heights and ideality factors in the metal/conducting polymer composite Schottky device
S Bandyopadhyay, A Bhattacharyya, SK Sen
Journal of applied physics 85 (7), 3671-3676, 1999
High reflectivity and crack-free AlGaN/AlN ultraviolet distributed Bragg reflectors
A Bhattacharyya, S Iyer, E Iliopoulos, AV Sampath, J Cabalu, ...
Journal of Vacuum Science & Technology B 20 (3), 1229-1233, 2002
Optically pumped intersubband emission of short-wave infrared radiation with GaN/AlN quantum wells
K Driscoll, Y Liao, A Bhattacharyya, L Zhou, DJ Smith, TD Moustakas, ...
Applied Physics Letters 94 (8), 081120, 2009
Intersubband absorption in AlN∕ GaN∕ AlGaN coupled quantum wells
K Driscoll, A Bhattacharyya, TD Moustakas, R Paiella, L Zhou, DJ Smith
Applied Physics Letters 91 (14), 141104, 2007
Nonlinear optical waveguides based on near-infrared intersubband transitions in GaN/AlN quantum wells
Y Li, A Bhattacharyya, C Thomidis, TD Moustakas, R Paiella
Optics express 15 (9), 5860-5865, 2007
Complex and incommensurate ordering in thin films grown by plasma-assisted molecular beam epitaxy
Y Wang, AS Özcan, KF Ludwig Jr, A Bhattacharyya, TD Moustakas, ...
Applied physics letters 88 (18), 181915, 2006
The role of liquid phase epitaxy during growth of AlGaN by MBE
TD Moustakas, A Bhattacharyya
physica status solidi (c) 9 (3‐4), 580-583, 2012
Mg and Al co-doping of ZnO thin films: Effect on ultraviolet photoconductivity
A Das, PG Roy, A Dutta, S Sen, P Pramanik, D Das, A Banerjee, ...
Materials Science in Semiconductor Processing 54, 36-41, 2016
Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles
J Henson, JC Heckel, E Dimakis, J Abell, A Bhattacharyya, G Chumanov, ...
Applied Physics Letters 95 (15), 151109-151109-3, 2009
Enlarged Photodetection Using Nanowire Arrays
A Mondal, NK Singh, P Chinnamuthu, JC Dhar, A Bhattacharyya, ...
IEEE Photonics Technology Letters 24 (22), 2020-2023, 2012
Comparative study of GaN/AlGaN MQWs grown homoepitaxially on (1100) and (0001) GaN
A Bhattacharyya, I Friel, S Iyer, TC Chen, W Li, J Cabalu, Y Fedyunin, ...
Journal of crystal growth 251 (1), 487-493, 2003
Optical devices featuring nonpolar textured semiconductor layers
TD Moustakas, A Moldawer, A Bhattacharyya, J Abell
US Patent 8,592,800, 2013
Sequential tunneling transport characteristics of GaN/AlGaN coupled-quantum-well structures
F Sudradjat, W Zhang, K Driscoll, Y Liao, A Bhattacharyya, C Thomidis, ...
Journal of Applied Physics 108 (10), 103704, 2010
Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons
J Henson, A Bhattacharyya, TD Moustakas, R Paiella
JOSA B 25 (8), 1328-1335, 2008
TiO2 nanoparticles arrays ultraviolet-A detector with Au Schottky contact
S Acumen, A Mondal, M Sarkar, B Choudhuri, A Saha, A Bhattacharyya
Experimental evidence that the plasma-assisted MBE growth of nitride alloys is a liquid phase epitaxy process
TD Moustakas, A Bhattacharyya
ECS Transactions 35 (6), 63-71, 2011
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