| Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs YK Yadav, BB Upadhyay, M Meer, N Bhardwaj, S Ganguly, D Saha IEEE Electron Device Letters 40 (1), 67-70, 2018 | 40 | 2018 |
| Thermally Grown TiO2and Al2O3for GaN-Based MOS-HEMTs A Rawat, M Meer, V kumar Surana, N Bhardwaj, V Pendem, ... IEEE Transactions on Electron Devices 65 (9), 3725-3731, 2018 | 40 | 2018 |
| Realization of high quality silicon nitride deposition at low temperatures VK Surana, N Bhardwaj, A Rawat, Y Yadav, S Ganguly, D Saha Journal of Applied Physics 126 (11), 2019 | 29 | 2019 |
| Reduced Contact Resistance and Improved Transistor Performance by Surface Plasma Treatment on Ohmic Regions in AlGaN/GaN HEMT Heterostructures YK Yadav, BB Upadhyay, M Meer, S Ganguly, D Saha physica status solidi (a) 215 (9), 1700656, 2018 | 18 | 2018 |
| Impact of relative gate position on DC and RF characteristics of high performance AlGaN/GaN HEMTs YK Yadav, BB Upadhyay, J Jha, S Ganguly, D Saha IEEE Transactions on Electron Devices 67 (10), 4141-4146, 2020 | 13 | 2020 |
| Al2O3 formed by post plasma oxidation of Al as a Gate dielectric for AlGaN/GaN MIS-HEMTs K Takhar, BB Upadhyay, YK Yadav, S Ganguly, D Saha Applied Surface Science 481, 219-225, 2019 | 13 | 2019 |
| Electrical properties of Bi2TiO5 ceramic YK Yadav, MPK Sahoo, RNP Choudhary Journal of alloys and compounds 490 (1-2), 589-593, 2010 | 13 | 2010 |
| Low-field mobility in an electrostatically confined 2D rectangular nanowire: effect of density of states and phonon confinement S Surapaneni, J Jha, V Pendem, YK Yadav, S Ganguly, D Saha Nanotechnology 32 (45), 455202, 2021 | 6 | 2021 |
| Prospects of III-Vs for logic applications UP Gomes, YK Yadav, S Chowdhury, K Ranjan, S Rathi, D Biswas Journal of Nano-and Electronic Physics 4 (2), 2009-1, 2012 | 6 | 2012 |
| Improvements from SiC substrate thinning in AlGaN/GaN HEMTs: Disparate effects on contacts, access and channel regions B Parvez, J Jha, P Upadhyay, N Bhardwaj, Y Yadav, B Upadhyay, ... IEEE Electron Device Letters 42 (5), 684-687, 2021 | 5 | 2021 |
| Thermally grown Nb-oxide for GaN-based MOS-diodes N Bhardwaj, BB Upadhyay, YK Yadav, S Surapaneni, S Ganguly, D Saha Applied Surface Science 572, 151332, 2022 | 4 | 2022 |
| A Strategic Review on Growth of GaN on Silicon Substrate for High Power High Frequency Microwave & Millimeter wave Switch Devices K Ranjan, YK Yadav, UP Gomes, S Rathi, D Biswas | 4 | 2012 |
| Improved RF-DC characteristics and reduced gate leakage in GaN MOS-HEMTs using thermally grown Nb2O5 gate dielectric N Bhardwaj, BB Upadhyay, B Parvez, P Pohekar, Y Yadav, A Sahu, ... Physica Scripta 98 (1), 015805, 2022 | 3 | 2022 |
| High‐Performance GaN HEMTs with I ON/I OFF ≈1010 and Gate Leakage Current <10−11 A mm−1 Using Ta2O5 Dielectric BB Upadhyay, S Surapaneni, YK Yadav, N Bhardwaj, N Suvachintak, ... physica status solidi (a) 219 (12), 2100839, 2022 | 2 | 2022 |
| High Power Broad C-band Amplifier Using AlGaN/GaN Based High Electron Mobility Transistors J Jha, Y Yadav, B Upadhyay, S Surapaneni, N Bhardwaj, S Ganguly, ... 8th International Conference on Electrical and Electronics Engineering …, 2021 | 1 | 2021 |
| Rapid LUT Modelling Technique for GaN HEMT Based MMIC Technology P Chandra, R Saini, J Jha, Y Yadav, S Mukherjee, R Gandhi, R Laha, ... 2021 IEEE MTT-S International Microwave and RF Conference (IMARC), 1-4, 2021 | | 2021 |
| Improved Ohmic Contacts by Surface Treatment on AlGaN/GaN heterostructures BBUDS Yogendra K. Yadav, Mudassar Meer XIX IWPSD 2017, 2017 | | 2017 |
| High performance AlGaN/GaN high electron mobility transistors MMDS Yogendra K. Yadav, Bhanu B.Upadhyay XIX IWPSD 2017, 2017 | | 2017 |
| Simulation Study of Low Dimensional Effects in Pitch-Scaled (90 nm Technology Node) High Electron Mobility Transistors for Very Large Scale Integration Applications UP Gomes, K Takhar, YK Yadav, K Ranjan, S Rathi, D Biswas Journal of nanoelectronics and optoelectronics 8 (2), 170-176, 2013 | | 2013 |
| Metal-Insulator Field-Plate Technology for Alleviation of Short- Channel Effects in Nanoscale In0.52Al0.48As/In0.53Ga0.47As InPbased HEMTs DB Yogendra Kr. Yadav, K. Ranjan, S. Rathi International Conference on Computational Electronics and Nanotechnology, 2012 | | 2012 |
Bhanu B. UpadhyayGaN Device Characterization and Modelling, Infineon Technologies, MunichVerified email at iitb.ac.in
