| Controllable growth of few-layer spiral WS2 PV Sarma, PD Patil, PK Barman, RN Kini, MM Shaijumon RSC Advances 6 (1), 376-382, 2016 | 60 | 2016 |
| 2D tungsten chalcogenides: synthesis, properties and applications M Mohl, AR Rautio, GA Asres, M Wasala, PD Patil, S Talapatra, K Kordas Advanced Materials Interfaces 7 (13), 2000002, 2020 | 47 | 2020 |
| Carbon Nanotube Based Robust and Flexible Solid-State Supercapacitor T De Silva, C Damery, R Alkhaldi, R Karunanithy, DH Gallaba, PD Patil, ... ACS Applied Materials & Interfaces 13 (47), 56004-56013, 2021 | 28 | 2021 |
| Fast photoresponse and high detectivity in copper indium selenide (CuIn7Se11) phototransistors S Ghosh, PD Patil, M Wasala, S Lei, A Nolander, P Sivakumar, R Vajtai, ... 2D Materials 5 (1), 015001, 2017 | 27 | 2017 |
| Gate-Induced Metal–Insulator Transition in 2D van der Waals Layers of Copper Indium Selenide Based Field-Effect Transistors PD Patil, S Ghosh, M Wasala, S Lei, R Vajtai, PM Ajayan, A Ghosh, ... ACS nano 13 (11), 13413-13420, 2019 | 23 | 2019 |
| Low temperature photoconductivity of few layer p-type tungsten diselenide (WSe2) field-effect transistors (FETs) S Ghosh, M Wasala, NR Pradhan, D Rhodes, PD Patil, M Fralaide, Y Xin, ... Nanotechnology 29 (48), 484002, 2018 | 15 | 2018 |
| Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11) PD Patil, S Ghosh, M Wasala, S Lei, R Vajtai, PM Ajayan, S Talapatra Electronics 8 (6), 645, 2019 | 13 | 2019 |
| Influence of channel thickness on charge transport behavior of multi-layer indium selenide (InSe) field-effect transistors M Wasala, PD Patil, S Ghosh, R Alkhaldi, L Weber, S Lei, R Vajtai, ... 2D Materials 7 (2), 025030, 2020 | 10 | 2020 |
| Photogating-driven enhanced responsivity in a few-layered ReSe 2 phototransistor PD Patil, M Wasala, R Alkhaldi, L Weber, KK Kovi, B Chakrabarti, JA Nash, ... Journal of Materials Chemistry C 9 (36), 12168-12176, 2021 | 8 | 2021 |
| Broadband photocurrent spectroscopy and temperature dependence of band gap of few-layer indium selenide (InSe) PD Patil, M Wasala, S Ghosh, S Lei, S Talapatra Emergent Materials 4 (4), 1029-1036, 2021 | 7 | 2021 |
| Role of layer thickness and field-effect mobility on photoresponsivity of indium selenide (InSe)-based phototransistors M Wasala, P Patil, S Ghosh, L Weber, S Lei, S Talapatra Oxford Open Materials Science 1 (1), itab010, 2021 | 4 | 2021 |
| Probing the growth quality of molecular beam epitaxy-grown Bi2Se3 films via in-situ spectroscopic ellipsometry A Bai, M Hilse, PD Patil, R Engel-Herbet, F Peiris Journal of Crystal Growth 591, 126714, 2022 | 2 | 2022 |
| Electronic and optoelectronic properties of the heterostructure devices composed of two-dimensional layered materials NR Pradhan, R Thantirige, PD Patil, SA McGill, S Talapatra 2D Nanoscale Heterostructured Materials: Synthesis, Properties and …, 2020 | 2 | 2020 |
| Investigation of Electronic and Opto-Electronic Properties of Two-Dimensional (2D) Layers of Copper Indium Selenide Field Effect Transistors PD Patil Southern Illinois University at Carbondale, 2017 | | 2017 |
Saikat TalapatraSouthern Illinois University CarbondaleVerified email at siu.edu
