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Luke F. Lester
Luke F. Lester
Roanoke Electric Steel Professor and Head, Bradley Dept of ECE, Virginia Tech
Verified email at vt.edu
Title
Cited by
Cited by
Year
Extremely low room-temperature threshold current density diode lasers using InAs dots in In0. 15Ga0. 85As quantum well
GT Liu, A Stintz, H Li, KJ Malloy, LF Lester
Electronics Letters 35 (14), 1163-1165, 1999
6921999
Room-temperature operation of InAs quantum-dash lasers on InP [001]
RH Wang, A Stintz, PM Varangis, TC Newell, H Li, KJ Malloy, LF Lester
IEEE Photonics Technology Letters 13 (8), 767-769, 2001
378*2001
Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
TC Newell, DJ Bossert, A Stintz, B Fuchs, KJ Malloy, LF Lester
IEEE Photonics Technology Letters 11 (12), 1527-1529, 1999
3751999
Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
LF Lester, A Stintz, H Li, TC Newell, EA Pease, BA Fuchs, KJ Malloy
IEEE Photonics Technology Letters 11 (8), 931-933, 1999
2881999
type II quantum dot solar cells for enhanced infrared spectral response
RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ...
Applied Physics Letters 90 (17), 173125, 2007
2372007
Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
PG Eliseev, H Li, A Stintz, GT Liu, TC Newell, KJ Malloy, LF Lester
Applied Physics Letters 77 (2), 262-264, 2000
2342000
Improved device performance of quantum dot solar cells with GaP strain compensation layers
RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ...
Applied Physics Letters 91 (24), 243115, 2007
2072007
Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers
X Huang, A Stintz, H Li, LF Lester, J Cheng, KJ Malloy
Applied Physics Letters 78 (19), 2825-2827, 2001
2072001
The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures
GT Liu, A Stintz, H Li, TC Newell, AL Gray, PM Varangis, KJ Malloy, ...
IEEE Journal of Quantum Electronics 36 (11), 1272-1279, 2000
1992000
Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
A Stintz, GT Liu, H Li, LF Lester, KJ Malloy
IEEE Photonics Technology Letters 12 (6), 591-593, 2000
1912000
Low-threshold quantum dot lasers with 201nm tuning range
PM Varangis, H Li, GT Liu, TC Newell, A Stintz, B Fuchs, KJ Malloy, ...
Electronics Letters 36 (18), 1, 2000
1862000
Single-mode GaN nanowire lasers
Q Li, JB Wright, WW Chow, TS Luk, I Brener, LF Lester, GT Wang
Optics express 20 (16), 17873-17879, 2012
1722012
Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
PG Eliseev, H Li, T Liu, TC Newell, LF Lester, KJ Malloy
IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 135-142, 2001
1472001
High-performance InAs quantum-dot lasers near 1.3 μm
Y Qiu, P Gogna, S Forouhar, A Stintz, LF Lester
Applied Physics Letters 79 (22), 3570-3572, 2001
1342001
Nonalloyed Ti/Al Ohmic contacts to n‐type GaN using high‐temperature premetallization anneal
LF Lester, JM Brown, JC Ramer, L Zhang, SD Hersee, JC Zolper
Applied physics letters 69 (18), 2737-2739, 1996
1331996
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
T Henderson, MI Aksun, CK Peng, H Morkoc, PC Chao, PM Smith, ...
IEEE electron device letters 7 (12), 649-651, 1986
1271986
Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp
H Su, LF Lester
Journal of Physics D: Applied Physics 38 (13), 2112, 2005
1242005
Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3-InAs–GaAs Quantum-Dot Lasers
F Grillot, B Dagens, JG Provost, H Su, LF Lester
IEEE Journal of Quantum Electronics 44 (10), 946-951, 2008
1162008
Ultra-low-noise cryogenic high-electron-mobility transistors
KHG Duh, MW Pospieszalski, WF Kopp, P Ho, AA Jabra, PC Chao, ...
IEEE transactions on electron devices 35 (3), 249-256, 1988
1011988
QD Lasers
US Patent 20,020,114,367, 0
98*
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