| High-resolution X-ray diffraction analysis of AlxGa1− xN/InxGa1− xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations SK Jana, P Mukhopadhyay, S Ghosh, S Kabi, A Bag, R Kumar, D Biswas Journal of Applied Physics 115 (17), 2014 | 40 | 2014 |
| Calculations for the band lineup of strained InxGa1− xN/GaN quantum wells: Effects of strain on the band offsets T Das, S Kabi, D Biswas Journal of Applied Physics 105 (4), 2009 | 29 | 2009 |
| Effect of quantum dot size and size distribution on the intersublevel transitions and absorption coefficients of III-V semiconductor quantum dot S Kabi, AG Perera Journal of Applied Physics 117 (12), 2015 | 27 | 2015 |
| 2DEG modulation in double quantum well enhancement mode nitride HEMT A Bag, P Das, R Kumar, P Mukhopadhyay, S Majumdar, S Kabi, D Biswas Physica E: Low-dimensional Systems and Nanostructures 74, 59-64, 2015 | 19 | 2015 |
| Comparative DC characteristic analysis of AlGaN/GaN HEMTs grown on Si (111) and sapphire substrates by MBE P Mukhopadhyay, A Bag, U Gomes, U Banerjee, S Ghosh, S Kabi, ... Journal of electronic materials 43 (4), 1263-1270, 2014 | 19 | 2014 |
| Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ... Applied Physics Letters 105 (7), 2014 | 14 | 2014 |
| Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility P Das, NN Halder, R Kumar, SK Jana, S Kabi, B Borisov, A Dabiran, ... Electronic Materials Letters 10, 1087-1092, 2014 | 13 | 2014 |
| A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si (1 0 0) P Mukhopadhyay, R Kumar, S Ghosh, A Chakraborty, A Bag, S Kabi, ... Journal of Crystal Growth 418, 138-144, 2015 | 11 | 2015 |
| Quantum well engineering of InAlAs/InGaAs HEMTs for low impact ionization applications UP Gomes, Y Chen, S Kabi, P Chow, D Biswas Current Applied Physics 13 (3), 487-492, 2013 | 11 | 2013 |
| Computations of the optical transitions and absorption spectra in a set of realistic, elongated InAs/GaAs quantum boxes having a Gaussian distribution S Kabi, S Panda, D Biswas Journal of Applied Physics 109 (5), 2011 | 9 | 2011 |
| Reconfirmation of the band offsets of InGaP/GaAs quantum wells S Kabi, T Das, D Biswas Physica E: Low-dimensional Systems and Nanostructures 42 (8), 2131-2133, 2010 | 7 | 2010 |
| Strong UV emission in flakes-like ZnS nanoparticles synthesized by cost effective sol-gel method P Kumari, A Sharma, A Kumawat, S Samanta, KP Misra, A Rao, S Kabi, ... Materials Today: Proceedings 58, 642-647, 2022 | 6 | 2022 |
| Dependence of the photoluminescence of annealed III-V semiconductor quantum dots on their shape and dimension S Kumar, S Kabi, D Biswas Journal of Applied Physics 104 (8), 2008 | 6 | 2008 |
| Conspicuous Presence of Higher Order Transitions in the Photoluminescence of InxGa1-xN/GaN Quantum Wells D Biswas, T Das, S Kabi, S Kumar Advanced Materials Research 31, 62-64, 2008 | 6 | 2008 |
| Growth and characterization of self-assembled InAs quantum dots on Si (100) for monolithic integration by MBE SK Jana, P Mukhopadhyay, S Kabi, NN Halder, A Bag, S Ghosh, ... IEEE Transactions on Nanotechnology 13 (5), 917-925, 2014 | 5 | 2014 |
| An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs S Ghosh, A Bag, SK Jana, P Mukhopadhyay, SM Dinara, S Kabi, ... Solid-state electronics 96, 1-8, 2014 | 5 | 2014 |
| Structural analysis and magnetic properties of cobalt-doped nanotitania KP Misra, A Kumawat, A Bandopadhyay, B Modak, SK Mukherjee, ... Materials Science and Engineering: B 282, 115761, 2022 | 3 | 2022 |
| Threading dislocations in GaN HEMTs on silicon: Origin of large time constant transients? S Ghosh, A Bag, P Mukhapadhay, SM Dinara, SK Jana, S Kabi, D Biswas Proc. CS MANTECH Conf, 349-352, 2014 | 3 | 2014 |
| A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot … N Basu, K Ghosh, S Kabi, S Sengupta, S Chakrabarti Superlattices and Microstructures 57, 150-157, 2013 | 3 | 2013 |
| Analytical modelling for the dark current of TiO2/ZnS core shell quantum dot (CSQD) photodetectors P Paul, J Biswas, S Chattopadhyay, S Kabi Materials Today: Proceedings 58, 653-655, 2022 | 2 | 2022 |
Ankush BagIndian Institute of Technology GuwahatiVerified email at iitg.ac.in
