| Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By O Based Gate Stack Engineering SD Gupta, A Soni, V Joshi, J Kumar, R Sengupta, H Khand, B Shankar, ... IEEE Transactions on Electron Devices 66 (6), 2544-2550, 2019 | 39 | 2019 |
| Part I: Physical Insights Into Dynamic RON Behavior and a Unique Time-Dependent Critical Stress Voltage in AlGaN/GaN HEMTs SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (11), 5720-5727, 2021 | 20 | 2021 |
| On the channel hot-electron’s interaction with C-doped GaN buffer and resultant gate degradation in AlGaN/GaN HEMTs RR Chaudhuri, V Joshi, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices 68 (10), 4869-4876, 2021 | 19 | 2021 |
| Interplay between surface and buffer traps in governing breakdown characteristics of AlGaN/GaN HEMTs—Part II V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (1), 80-87, 2020 | 16 | 2020 |
| On the ESD behavior of AlGaN/GaN Schottky diodes and trap assisted failure mechanism B Shankar, R Sengupta, SD Gupta, A Soni, N Mohan, N Bhat, ... 2017 39th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-6, 2017 | 14 | 2017 |
| Physical insights into the impact of surface traps on breakdown characteristics of AlGaN/GaN HEMTs—Part I V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (1), 72-79, 2020 | 13 | 2020 |
| Trap assisted stress induced ESD reliability of GaN schottky diodes B Shankar, R Singh, R Sengupta, H Khand, A Soni, SD Gupta, ... 2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 1-6, 2018 | 10 | 2018 |
| Novel surface passivation scheme by using p-type AlTiO to mitigate dynamic ON resistance behavior in AlGaN/GaN HEMTs—Part II SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 68 (11), 5728-5735, 2021 | 9 | 2021 |
| ECR Plasma Enhanced Film Deposition System GS Taki, JBM Krishna, SD Gupta, S Karmakar, SK Kundu J. Phys 59, 77, 2016 | 9 | 2016 |
| Physical insights into electron trapping mechanism in the carbon-doped GaN buffer in AlGaN/GaN HEMTs and its impact on dynamic on-resistance V Joshi, RR Chaudhuri, SD Gupta, M Shrivastava IEEE Transactions on Electron Devices, 2023 | 7 | 2023 |
| Time dependent shift in SOA boundary and early breakdown of epi-stack in AlGaN/GaN HEMTs under fast cyclic transient stress B Shankar, S Shikha, A Singh, J Kumar, A Soni, SD Gupta, S Raghavan, ... IEEE Transactions on Device and Materials Reliability 20 (3), 562-569, 2020 | 7 | 2020 |
| ESD behavior of AlGaN/GaN Schottky diodes B Shankar, SD Gupta, A Soni, S Raghavan, M Shrivastava IEEE Transactions on Device and Materials Reliability 19 (2), 437-444, 2019 | 7 | 2019 |
| Time dependent early breakdown of AIGaN/GaN epi stacks and shift in SOA boundary of HEMTs under fast cyclic transient stress B Shankar, A Soni, SD Gupta, S Shikha, S Singh, S Raghavan, ... 2018 IEEE International Electron Devices Meeting (IEDM), 34.6. 1-34.6. 4, 2018 | 6 | 2018 |
| Safe operating area (SOA) reliability of polarization super junction (PSJ) GaN FETs B Shankar, A Soni, SD Gupta, M Shrivastava 2018 IEEE International Reliability Physics Symposium (IRPS), 4E. 3-1-4E. 3-4, 2018 | 6 | 2018 |
| Interplay of device design and carbon-doped GaN buffer parameters in determining dynamic in AlGaN/GaN HEMTs V Joshi, SD Gupta, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 69 (11), 6035-6042, 2022 | 5 | 2022 |
| Unique gate bias dependence of dynamic on-resistance in MIS-gated AlGaN/GaN HEMTs and its dependence on gate control over the 2-DEG SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 69 (3), 1608-1611, 2022 | 5 | 2022 |
| Unique Role of Hot-Electron Induced Self-Heating in Determining Gate-Stack Dependent Dynamic RON of AlGaN/GaN HEMTs Under Semi-on State SD Gupta, V Joshi, RR Chaudhuri, M Shrivastava IEEE Transactions on Electron Devices 69 (12), 6934-6939, 2022 | 4 | 2022 |
| On the root cause of dynamic ON resistance behavior in AlGaN/GaN HEMTs SD Gupta, V Joshi, RR Chaudhuri, A kr Singh, S Guha, M Shrivastava 2020 IEEE International Reliability Physics Symposium (IRPS), 1-4, 2020 | 4 | 2020 |
| Observations regarding deep-level states causing p-type doping in AlTiO gate and positive threshold voltage shift in AlGaN/GaN high electron mobility transistors S Dutta Gupta, V Joshi, R Roy Chaudhuri, M Shrivastava Journal of Applied Physics 130 (1), 2021 | 2 | 2021 |
| Silicon-based core–shell nanostructures M Ray, SD Gupta, A Hazra Silicon Nanomaterials Sourcebook, 215-262, 2017 | 2 | 2017 |
Mayank ShrivastavaIndian Institute of Science BangaloreVerified email at iisc.ac.in
