Javier Mateos (ORCID:0000-0003-4041-7145)
Javier Mateos (ORCID:0000-0003-4041-7145)
Universidad de Salamanca, Catedrático de Electrónica
Verified email at - Homepage
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Voltage tuneable terahertz emission from a ballistic nanometer InGaAs∕ InAlAs transistor
J Lusakowski, W Knap, N Dyakonova, L Varani, J Mateos, T Gonzalez, ...
Journal of applied physics 97 (6), 2005
Monte Carlo simulator for the design optimization of low-noise HEMTs
J Mateos, T González, D Pardo, V Hoël, A Cappy
IEEE Transactions on Electron Devices 47 (10), 1950-1956, 2000
Microwave detection at 110 GHz by nanowires with broken symmetry
C Balocco, AM Song, M Åberg, A Forchel, T González, J Mateos, ...
Nano Letters 5 (7), 1423-1427, 2005
Improved Monte Carlo algorithm for the simulation of/spl delta/-doped AlInAs/GaInAs HEMTs
J Mateos, T González, D Pardo, V Hoel, H Happy, A Cappy
IEEE transactions on electron devices 47 (1), 250-253, 2000
Operation and high-frequency performance of nanoscale unipolar rectifying diodes
J Mateos, BG Vasallo, D Pardo, T González
Applied Physics Letters 86 (21), 2005
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, Y Roelens, ...
Nanotechnology 14 (2), 117, 2003
Microscopic modeling of nonlinear transport in ballistic nanodevices
J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, S Bollaert, ...
IEEE Transactions on Electron Devices 50 (9), 1897-1905, 2003
A 520–620-GHz Schottky receiver front-end for planetary science and remote sensing with 1070 K–1500 K DSB noise temperature at room temperature
J Treuttel, L Gatilova, A Maestrini, D Moro-Melgar, F Yang, F Tamazouzt, ...
IEEE transactions on terahertz science and technology 6 (1), 148-155, 2015
Phonon black-body radiation limit for heat dissipation in electronics
J Schleeh, J Mateos, I Íñiguez-de-la-Torre, N Wadefalk, PA Nilsson, ...
Nature materials 14 (2), 187-192, 2015
Terahertz Gunn-like oscillations in InGaAs/InAlAs planar diodes
S Pérez, T González, D Pardo, J Mateos
Journal of applied physics 103 (9), 2008
Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors
T González, C González, J Mateos, D Pardo, L Reggiani, OM Bulashenko, ...
Physical review letters 80 (13), 2901, 1998
Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs
BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, T González, ...
IEEE Transactions on Electron Devices 54 (11), 2815-2822, 2007
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
P Sangaré, G Ducournau, B Grimbert, V Brandli, M Faucher, C Gaquière, ...
Journal of Applied Physics 113 (3), 2013
Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis
J Mateos, T González, D Pardo, V Hoel, A Cappy
Semiconductor science and technology 14 (9), 864, 1999
Nonlinear effects in T-branch junctions
J Mateos, BG Vasallo, D Pardo, T González, E Pichonat, JS Galloo, ...
IEEE Electron Device Letters 25 (5), 235-237, 2004
Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations
I Iñiguez-De-La-Torre, J Mateos, T González, D Pardo, JS Galloo, ...
Semiconductor science and technology 22 (6), 663, 2007
Searching for THz Gunn oscillations in GaN planar nanodiodes
A Iniguez-De-La-Torre, I Íñiguez-De-La-Torre, J Mateos, T González, ...
Journal of Applied Physics 111 (11), 2012
Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport
T González, OM Bulashenko, J Mateos, D Pardo, L Reggiani
Physical Review B 56 (11), 6424, 1997
Design optimization of AlInAs-GaInAs HEMTs for high-frequency applications
JM Lopez, T González, D Pardo, S Bollaert, T Parenty, A Cappy
IEEE transactions on Electron Devices 51 (4), 521-528, 2004
High-mobility heterostructures based on InAs and InSb: A Monte Carlo study
H Rodilla, T González, D Pardo, J Mateos
Journal of Applied Physics 105 (11), 2009
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