| Oxide defect engineering enables to couple solar energy into oxygen activation N Zhang, X Li, H Ye, S Chen, H Ju, D Liu, Y Lin, W Ye, C Wang, Q Xu, ... Journal of the American Chemical Society 138 (28), 8928-8935, 2016 | 960 | 2016 |
| Back-end-of-line compatible transistors for monolithic 3-D integration S Datta, S Dutta, B Grisafe, J Smith, S Srinivasa, H Ye IEEE micro 39 (6), 8-15, 2019 | 123 | 2019 |
| Monolithic 3D integration of high endurance multi-bit ferroelectric FET for accelerating compute-in-memory S Dutta, H Ye, W Chakraborty, YC Luo, M San Jose, B Grisafe, A Khanna, ... 2020 IEEE International Electron Devices Meeting (IEDM), 36.4. 1-36.4. 4, 2020 | 111 | 2020 |
| Detection of sub-fM DNA with target recycling and self-assembly amplification on graphene field-effect biosensors Z Gao, H Xia, J Zauberman, M Tomaiuolo, J Ping, Q Zhang, P Ducos, ... Nano letters 18 (6), 3509-3515, 2018 | 103 | 2018 |
| BEOL compatible dual-gate ultra thin-body W-doped indium-oxide transistor with Ion= 370μA/μm, SS= 73mV/dec and Ion/Ioff Ratio> 4× 109 W Chakraborty, B Grisafe, H Ye, I Lightcap, K Ni, S Datta 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 68 | 2020 |
| Double-gate W-doped amorphous indium oxide transistors for monolithic 3D capacitorless gain cell eDRAM H Ye, J Gomez, W Chakraborty, S Spetalnick, S Dutta, K Ni, ... 2020 IEEE International Electron Devices Meeting (IEDM), 28.3. 1-28.3. 4, 2020 | 66 | 2020 |
| Logic compatible high-performance ferroelectric transistor memory S Dutta, H Ye, AA Khandker, SG Kirtania, A Khanna, K Ni, S Datta IEEE Electron Device Letters 43 (3), 382-385, 2022 | 62 | 2022 |
| Low thermal budget (< 250° C) dual-gate amorphous indium tungsten oxide (IWO) thin-film transistor for monolithic 3-D integration W Chakraborty, H Ye, B Grisafe, I Lightcap, S Datta IEEE Transactions on Electron Devices 67 (12), 5336-5342, 2020 | 61 | 2020 |
| Examination of the interplay between polarization switching and charge trapping in ferroelectric FET S Deng, Z Jiang, S Dutta, H Ye, W Chakraborty, S Kurinec, S Datta, K Ni 2020 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2020 | 53 | 2020 |
| A novel ferroelectric superlattice based multi-level cell non-volatile memory K Ni, J Smith, H Ye, B Grisafe, GB Rayner, A Kummel, S Datta 2019 IEEE International Electron Devices Meeting (IEDM), 28.8. 1-28.8. 4, 2019 | 47 | 2019 |
| Equivalent oxide thickness (EOT) scaling with hafnium zirconium oxide high-κ dielectric near morphotropic phase boundary K Ni, A Saha, W Chakraborty, H Ye, B Grisafe, J Smith, GB Rayner, ... 2019 IEEE international electron devices meeting (IEDM), 7.4. 1-7.4. 4, 2019 | 46 | 2019 |
| BEOL-compatible superlattice FEFET analog synapse with improved linearity and symmetry of weight update KA Aabrar, SG Kirtania, FX Liang, J Gomez, M San Jose, Y Luo, H Ye, ... IEEE Transactions on Electron Devices 69 (4), 2094-2100, 2022 | 41 | 2022 |
| BEOL compatible superlattice FerroFET-based high precision analog weight cell with superior linearity and symmetry KA Aabrar, J Gomez, SG Kirtania, M San Jose, Y Luo, PG Ravikumar, ... 2021 IEEE International Electron Devices Meeting (IEDM), 19.6. 1-19.6. 4, 2021 | 32 | 2021 |
| Graphene transistor arrays functionalized with genetically engineered antibody fragments for Lyme disease diagnosis Z Gao, P Ducos, H Ye, J Zauberman, A Sriram, X Yang, Z Wang, ... 2D Materials 7 (2), 024001, 2020 | 23 | 2020 |
| Lifelong learning with monolithic 3D ferroelectric ternary content-addressable memory S Dutta, A Khanna, H Ye, MM Sharifi, A Kazemi, M San Jose, KA Aabrar, ... 2021 IEEE International Electron Devices Meeting (IEDM), 1-4, 2021 | 20 | 2021 |
| Computational associative memory based on monolithically integrated metal-oxide thin film transistors for update-frequent search applications Z Zhao, J Gomez, H Ye, M Imani, X Yin, S Deng, B Melanson, J Zhang, ... 2021 IEEE International Electron Devices Meeting (IEDM), 37.6. 1-37.6. 4, 2021 | 8 | 2021 |
| Theoretical and Empirical Insight into Dopant, Mobility and Defect States in W Doped Amorphous In2 O3 for High-Performance Enhancement Mode BEOL … Y Hu, H Ye, KA Aabrar, SG Kirtania, W Chakraborty, S Datta, K Cho 2022 International Electron Devices Meeting (IEDM), 8.5. 1-8.5. 4, 2022 | 7 | 2022 |
| BEOL Compatible Ferroelectric Routers for Run-time Reconfigurable Compute-in-Memory Accelerators A Khanna, H Ye, Y Luo, G Bajpai, M San Jose, W Chakraborty, S Yu, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 3 | 2022 |
| First-principles investigation of amorphous n-type In2 O3 for BEOL transistor Y Hu, W Chakraborty, H Ye, S Datta, K Cho 2021 International Conference on Simulation of Semiconductor Processes and …, 2021 | 3 | 2021 |
| Low-Frequency Noise Characteristics of BEOL-Compatible IWO Transistor YC Luo, H Ye, W Chakraborty, J Hur, PV Ravindran, AI Khan, S Datta, ... 2022 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2022 | 1 | 2022 |
