Rinus Lee
Rinus Lee
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Novel epitaxial nickel aluminide-silicide with low Schottky-barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs
RTP Lee, TY Liow, KM Tan, AEJ Lim, CS Ho, KM Hoe, MY Lai, ...
2007 IEEE Symposium on VLSI Technology, 108-109, 2007
Scaling challenges for advanced CMOS devices
AP Jacob, R Xie, MG Sung, L Liebmann, RTP Lee, B Taylor
International Journal of High Speed Electronics and Systems 26 (01n02), 1740001, 2017
Strained n-channel FinFETs with 25 nm gate length and silicon-carbon source/drain regions for performance enhancement
TY Liow, KM Tan, R Lee, A Du, CH Tung, G Samudra, WJ Yoo, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 56-57, 2006
Strained n-Channel FinFETs Featuring In Situ Doped Silicon–Carbon Source and Drain Stressors With High Carbon Content
TY Liow, KM Tan, D Weeks, RTP Lee, M Zhu, KM Hoe, CH Tung, M Bauer, ...
IEEE Transactions on Electron Devices 55 (9), 2475-2483, 2008
Threshold voltage shift due to charge trapping in dielectric-gated AlGaN/GaN high electron mobility transistors examined in Au-free technology
DW Johnson, RTP Lee, RJW Hill, MH Wong, G Bersuker, EL Piner, ...
IEEE transactions on electron devices 60 (10), 3197-3203, 2013
A 7nm CMOS technology platform for mobile and high performance compute application
S Narasimha, B Jagannathan, A Ogino, D Jaeger, B Greene, C Sheraw, ...
2017 IEEE International Electron Devices Meeting (IEDM), 29.5. 1-29.5. 4, 2017
Nickel-silicide: carbon contact technology for n-channel MOSFETs with silicon–carbon source/drain
RTP Lee, LT Yang, TY Liow, KM Tan, AEJ Lim, KW Ang, DMY Lai, ...
IEEE electron device letters 29 (1), 89-92, 2007
N-channel FinFETs with 25-nm gate length and Schottky-barrier source and drain featuring ytterbium silicide
RTP Lee, AEJ Lim, KM Tan, TY Liow, GQ Lo, GS Samudra, DZ Chi, ...
IEEE electron device letters 28 (2), 164-167, 2007
Positive bias instability and recovery in InGaAs channel nMOSFETs
S Deora, G Bersuker, WY Loh, D Veksler, K Matthews, TW Kim, RTP Lee, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 507-514, 2013
Current–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGe∕ n-(001) Ge contact
DZ Chi, RTP Lee, SJ Chua, SJ Lee, S Ashok, DL Kwong
Journal of applied physics 97 (11), 2005
Strained p-Channel FinFETs With Extended-Shaped Silicon–Germanium Source and Drain Stressors
KM Tan, TY Liow, RTP Lee, KM Hoe, CH Tung, N Balasubramanian, ...
IEEE electron device letters 28 (10), 905-908, 2007
ETB-QW InAs MOSFET with scaled body for improved electrostatics
TW Kim, DH Kim, DH Koh, RJW Hill, RTP Lee, MH Wong, T Cunningham, ...
2012 International Electron Devices Meeting, 32.3. 1-32.3. 4, 2012
N-channel (110)-sidewall strained FinFETs with silicon–carbon source and drain stressors and tensile capping layer
TY Liow, KM Tan, RTP Lee, CH Tung, GS Samudra, N Balasubramanian, ...
IEEE electron device letters 28 (11), 1014-1017, 2007
Enhanced morphological stability of NiGe films formed using Ni (Zr) alloy
SL Liew, RTP Lee, KY Lee, B Balakrisnan, SY Chow, MY Lai, DZ Chi
Thin Solid Films 504 (1-2), 104-107, 2006
Spacer removal technique for boosting strain in n-channel FinFETs with silicon-carbon source and drain stressors
TY Liow, KM Tan, RTP Lee, M Zhu, KM Hoe, GS Samudra, ...
IEEE Electron Device Letters 29 (1), 80-82, 2007
Relays do not leak: CMOS does
H Fariborzi, F Chen, R Nathanael, IR Chen, L Hutin, R Lee, TJK Liu, ...
Proceedings of the 50th Annual Design Automation Conference, 1-4, 2013
A high-stress liner comprising diamond-like carbon (DLC) for strained p-channel MOSFET
KM Tan, M Zhu, WW Fang, M Yang, TY Liow, RTP Lee, KM Hoe, CH Tung, ...
IEEE electron device letters 29 (2), 192-194, 2008
Effects of Ti incorporation in Ni on silicidation reaction and structural/electrical properties of NiSi
RTP Lee, DZ Chi, MY Lai, NL Yakovlev, SJ Chua
Journal of the Electrochemical Society 151 (9), G642, 2004
Carrier transport characteristics of sub-30 nm strained n-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancement
TY Liow, KM Tan, HC Chin, RTP Lee, CH Tung, GS Samudra, ...
2006 International Electron Devices Meeting, 1-4, 2006
A new liner stressor with very high intrinsic stress (≫ 6 GPa) and low permittivity comprising diamond-like carbon (DLC) for strained P-channel transistors
KM Tan, M Zhu, WW Fang, M Yang, TY Liow, RTP Lee, KM Hoe, CH Tung, ...
2007 IEEE International Electron Devices Meeting, 127-130, 2007
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