| Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ... MRS Proceedings, XXXIII 2, 81-87, 2014 | 45 | 2014 |
| Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0.3Ga0.7N/GaN heterostructure: strain and interface capacitance … SM Dinara, SK Jana, S Ghosh, P Mukhopadhyay, R Kumar, ... AIP Advances 5 (4), 047136, 2015 | 31 | 2015 |
| OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ... IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018 | 30 | 2018 |
| Synthesis of a 3D free standing crystalline NiSe x matrix for electrochemical energy storage applications SM Dinara, AK Samantara, JK Das, JN Behera, SK Nayak, DJ Late, ... Dalton Transactions 48 (45), 16873-16881, 2019 | 19 | 2019 |
| Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ... Applied Physics Letters 105 (7), 073502, 2014 | 14 | 2014 |
| Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure A Chakraborty, S Ghosh, P Mukhopadhyay, SK Jana, SM Dinara, A Bag, ... Electronic Materials Letters 12 (2), 232-236, 2016 | 7 | 2016 |
| On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs S Ghosh, SM Dinara, M Mahata, S Das, P Mukhopadhyay, SK Jana, ... physica status solidi (a) 213 (6), 1559-1563, 2016 | 5 | 2016 |
| An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs S Ghosh, A Bag, SK Jana, P Mukhopadhyay, SM Dinara, S Kabi, ... Solid-state electronics 96, 1-8, 2014 | 5 | 2014 |
| Threading dislocations in GaN HEMTs on silicon: Origin of large time constant transients? S Ghosh, A Bag, P Mukhapadhay, SM Dinara, SK Jana, S Kabi, D Biswas Proc. CS MANTECH Conf., 349-352, 2014 | 3 | 2014 |
| Analysis of strain induced carrier confinement with varying passivation thickness of the Al0.3Ga0.7N/GaN heterostructure with graded AlxGa1-xN buffer on Si … SM Dinara, S Ghosh, SK Jana, S Majumdar, D Biswas, S Bhattacharya Journal of Vacuum Science & Technology B, Nanotechnology and …, 2017 | 2 | 2017 |
| Potentiality of trap charge effects and SiON induced interface defects in a-Si3N4/SiON based MIS structure for resistive NVM device SM Dinara, S Ghosh, NN Halder, A Bag, S Bhattacharya, D Biswas Microelectronics Reliability 55 (5), 789-794, 2015 | 2 | 2015 |
| Effect of longitudinal electric field and self heating of channel on linearity and gain of AlGaN/GaN HEMT on sapphire (0001) A Bag, P Mukhopadhyay, S Ghosh, R Kumar, SM Dinara, S Kabi, ... Proceedings of the 2014 IEEE Students' Technology Symposium, 393-395, 2014 | 2 | 2014 |
| Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current A Bag, P Das, S Ghosh, P Mukhopadhyay, SM Dinara, R Kumar, ... IETE Technical Review 33 (1), 7-10, 2016 | 1 | 2016 |
| Strain Effects on Band Structure of Wurtzite InGaN/GaN Quantum Well on Si Substrate SK Jana, S Ghosh, SM Dinara, TD Das, D Biswas IOP Conference Series: Materials Science and Engineering 73 (1), 012151, 2015 | 1 | 2015 |
| Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode S Das, S Majumder, R Kumar, MK Mahata, SM Dinara, D Biswas 2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 1-4, 2014 | 1 | 2014 |
| Process, Design, and Technological Integration of Flexible Microsupercapacitors SM Dinara Electrochemical Energy Conversion and Storage Systems for Future …, 2020 | | 2020 |
| Self-supported two-dimensional NiCo2S4 micro-spheres for ultra-high supercapacitor application via two-step methods: Electro-deposition and chemical vapor … SM Dinara, CS Rout, AK Samantara, JN Behera, SK Nayak AIP Conference Proceedings 2276 (1), 020017, 2020 | | 2020 |
| Comparative High-Resolution X-Ray Diffraction Analysis of GaN/AlGaN Heterostructure on Al 2 O 3 and Si (111) Substrate Grown by Plasma Assisted Molecular Beam Epitaxy SK Jana, S Ghosh, SM Dinara, A Chakraorty, D Biswas MRS Online Proceedings Library 1754 (1), 129-134, 2015 | | 2015 |
| Comparative study on hydrostatic strain, stress and dislocation density of Al0.3Ga0.7N/GaN heterostructure before and after a-Si3N4 passivation SM Dinara, SK Jana, P Mukhopadhyay, S Ghosh, S Bhattacharya, ... AIP Conference Proceedings 1675 (1), 020023, 2015 | | 2015 |
| Structural, optical, and transport properties of AlGaN/GaN and AlGaN/InGaN heterostructure on sapphire grown by plasma assisted molecular beam epitaxy SK Jana, S Ghosh, SM Dinara, M Mahata, S Das, D Biswas Journal of Vacuum Science & Technology B, Nanotechnology and …, 2015 | | 2015 |
