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Anwar Jarndal, Professor
Anwar Jarndal, Professor
Verified email at sharjah.ac.ae - Homepage
Title
Cited by
Cited by
Year
A new small-signal modeling approach applied to GaN devices
A Jarndal, G Kompa
IEEE Transactions on Microwave Theory and Techniques 53 (11), 3440-3448, 2005
3362005
Large-signal model for AlGaN/GaN HEMTs accurately predicts trapping-and self-heating-induced dispersion and intermodulation distortion
A Jarndal, G Kompa
IEEE Transactions on Electron Devices 54 (11), 2830-2836, 2007
1282007
Improved modeling of GaN HEMTs on Si substrate for design of RF power amplifiers
A Jarndal, AZ Markos, G Kompa
IEEE transactions on microwave theory and techniques 59 (3), 644-651, 2011
1002011
A reliable model parameter extraction method applied to AlGaN/GaN HEMTs
A Jarndal, R Essaadali, AB Kouki
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2015
772015
An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction
A Jarndal, G Kompa
IEEE microwave and wireless components letters 16 (6), 333-335, 2006
742006
Large signal modeling of GaN device for high power amplifier design
AH Jarndal
kassel university press GmbH, 2006
592006
ANN-based large-signal model of AlGaN/GaN HEMTs with accurate buffer-related trapping effects characterization
X Du, M Helaoui, A Jarndal, T Liu, B Hu, X Hu, FM Ghannouchi
IEEE Transactions on Microwave Theory and Techniques 68 (7), 3090-3099, 2020
562020
Reliable hybrid small-signal modeling of GaN HEMTs based on particle-swarm-optimization
AS Hussein, AH Jarndal
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2017
512017
On neural networks based electrothermal modeling of GaN devices
A Jarndal
IEEE Access 7, 94205-94214, 2019
502019
Large-signal modeling of GaN HEMTs using hybrid GA-ANN, PSO-SVR, and GPR-based approaches
A Jarndal, S Husain, M Hashmi, FM Ghannouchi
IEEE Journal of the Electron Devices Society 9, 195-208, 2020
462020
On the performance of GaN‐on‐silicon, silicon‐carbide, and diamond substrates
A Jarndal, L Arivazhagan, D Nirmal
International Journal of RF and Microwave Computer‐Aided Engineering 30 (6 …, 2020
452020
Reliable noise modeling of GaN HEMTs for designing low‐noise amplifiers
A Jarndal, A Hussein, G Crupi, A Caddemi
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2020
392020
A new small signal model parameter extraction method applied to GaN devices
A Jarndal, G Kompa
IEEE MTT-S International Microwave Symposium Digest, 2005., 1423-1426, 2005
392005
AlGaN/GaN HEMTs on SiC and Si substrates: a review from the small‐signal‐modeling's perspective
A Jarndal
International Journal of RF and Microwave Computer‐Aided Engineering 24 (3 …, 2014
352014
A new GaN HEMT equivalent circuit modeling technique based on X-parameters
R Essaadali, A Jarndal, AB Kouki, FM Ghannouchi
IEEE Transactions on Microwave Theory and Techniques 64 (9), 2758-2777, 2016
342016
Accurate large-signal modeling of AlGaN-GaN HEMT including trapping and self-heating induced dispersion
A Jarndal, B Bunz, G Kompa
2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006
322006
Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects
A Jarndal, FM Ghannouchi
Solid-State Electronics 123, 19-25, 2016
312016
Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design
A Jarndal, P Aflaki, L Degachi, A Birafane, A Kouki, R Negra, ...
Solid-state electronics 54 (7), 696-700, 2010
302010
On temperature‐dependent small‐signal modelling of GaN HEMTs using artificial neural networks and support vector regression
A Jarndal, S Husain, M Hashmi
IET Microwaves, Antennas & Propagation 15 (8), 937-953, 2021
292021
Genetic algorithm initialized artificial neural network based temperature dependent small‐signal modeling technique for GaN high electron mobility transistors
A Jarndal, S Husain, M Hashmi
International Journal of RF and Microwave Computer‐Aided Engineering 31 (3 …, 2021
272021
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Articles 1–20