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Dr Minaxi Dassi
Dr Minaxi Dassi
Assistant Professor, Chitkara University
Verified email at chitkarauniversity.edu.in
Title
Cited by
Cited by
Year
Numerical analysis of Mg2Si/Si heterojunction DG-TFET for low power/high performance applications: Impact of non-idealities
J Madan, M Dassi, R Pandey, R Chaujar, R Sharma
Superlattices and Microstructures 139, 106397, 2020
202020
A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications
M Dassi, J Madan, R Pandey, R Sharma
Semiconductor Science and Technology 35 (10), 105013, 2020
12*2020
Effect of temperature on analog performance of Mg2Si source heterojunction double gate tunnel field effect transistor
M Dassi, J Madan, R Pandey, R Sharma
Materials Today: Proceedings 28, 1520-1524, 2020
42020
Chemical modulation of conducting polymer gate electrode work function based double gate Mg2Si TFET for gas sensing applications
M Dassi, J Madan, R Pandey, R Sharma
Journal of Materials Science: Materials in Electronics, 1-10, 2022
22022
Magnesium silicide source double palladium metal gate TFET for highly sensitive hydrogen gas sensor
M Dassi, J Madan, R Pandey, R Sharma
2021 Devices for Integrated Circuit (DevIC), 238-241, 2021
22021
Electrical performance analysis of Al0. 5Ga0. 5 N/AlN/Sapphire-based MSM UV detector for high photocurrent
H Kaur, HJ Kaur, MK Hooda, M Dassi
Journal of Optics, 1-10, 2022
2022
Mg2Si/Si heterojunction dopingless TFET with reduced random dopant fluctuations for low power applications
M Dassi, J Madan, R Pandey, R Sharma
Journal of Materials Science: Materials in Electronics 33 (9), 6816-6828, 2022
2022
Impact of interfacial charges on analog and RF performance of Mg2Si source heterojunction double-gate tunnel field effect transistor
M Dassi, J Madan, R Pandey, R Sharma
Journal of Materials Science: Materials in Electronics 32 (19), 23863-23879, 2021
2021
Numerical Simulations and Analysis of Heterojunction Tunnel Field Effect Transistor for Low Power and HighSpeed Applications
M Dassi
Chandigarh, 2021
2021
Erratum: A novel source material engineered double gate tunnel field effect transistor for radio frequency integrated circuit applications (2020 Semicond. Sci. Technol. 35 129601)
M Dassi, J Madan, R Pandey, R Sharma
Semiconductor Science and Technology 35 (12), 129601, 2020
2020
Built-in Reliability Investigation of Gate-Drain Underlapped PNIN-GAA-TFET for Improved Linearity and Reduced Intermodulation Distortion
R Pandey, J Madan, R Sharma, M Dassi, R Chaujar
Energy Systems, Drives and Automations, 205-213, 2020
2020
Optimization for Minimum Noise Figure of RF Low Noise Amplifier in 0.18μm Technology
MD R. Sharma
Int. Journal of Electrical & Electronics Engg. , 2, pp 25-28, 2015
2015
Design of RF Low Noise Amplifier at 2GHz in 0.18 μm Technology
M Dassi, R Sharma
Journal on Today's Ideas-Tomorrow's Technologies 2 (2), 107-115, 2014
2014
“Nano Technology boom for medicines”, ,
MD Tanvi Mehta, Jatinder Kaur
National conference on Innovative Projects at Baddi University., 2011
2011
Nanotechnology " An engineering solution to medical problems"
MD Neeru sharma
National conference on Recent Advances in Electronics & Communication …, 2006
2006
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Articles 1–15