Avirup Dasgupta
Title
Cited by
Cited by
Year
Capacitance Modeling in Dual Field-Plate Power GaN HEMT for Accurate Switching Behavior
S Aamir Ahsan, S Ghosh, K Sharma, A Dasgupta, S Khandelwal, ...
IEEE Transactions on Electron Devices 63 (2), 2016
60*2016
Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs
S Ghosh, A Dasgupta, S Khandelwal, S Agnihotri, YS Chauhan
IEEE Transactions on Electron Devices 62 (2), 443-448, 2014
462014
BSIM-CMG: Standard FinFET compact model for advanced circuit design
JP Duarte, S Khandelwal, A Medury, C Hu, P Kushwaha, H Agarwal, ...
ESSCIRC Conference 2015-41st European Solid-State Circuits Conference …, 2015
362015
Surface Potential Based Modeling of Thermal Noise for HEMT Circuit Simulation
A Dasgupta, S Khandelwal, YS Chauhan
IEEE Microwave and Wireless Components Letters 25 (6), 376-378, 2015
302015
Proposal for capacitance matching in negative capacitance field-effect transistors
H Agarwal, P Kushwaha, YK Lin, MY Kao, YH Liao, A Dasgupta, ...
IEEE Electron Device Letters 40 (3), 463-466, 2019
292019
Compact Modeling of Flicker Noise in HEMTs
A Dasgupta, S Khandelwal, YS Chauhan
IEEE Journal of Electron Devices Society 2 (6), 174-178, 2014
232014
Unified compact model for nanowire transistors including quantum effects and quasi-ballistic transport
A Dasgupta, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 64 (4), 1837-1845, 2017
192017
Compact Modeling of Surface Potential, Charge and Current in Nanoscale Transistors under Quasi-Ballistic Regime
A Dasgupta, A Agarwal, S Khandelwal, YS Chauhan
IEEE Transactions on Electron Devices 63 (11), 4151-4159, 2016
192016
ASM-HEMT: compact model for GaN HEMTs
A Dasgupta, S Ghosh, YS Chauhan, S Khandelwal
2015 IEEE International Conference on Electron Devices and Solid-State …, 2015
162015
Compact modeling of drain current thermal noise in FDSOI MOSFETs including back-bias effect
Y Sahu, P Kushwaha, A Dasgupta, C Hu, YS Chauhan
IEEE Transactions on Microwave Theory and Techniques 65 (7), 2261-2270, 2017
152017
Effect of access region and field plate on capacitance behavior of GaN HEMT
K Sharma, A Dasgupta, S Ghosh, SA Ahsan, S Khandelwal, YS Chauhan
2015 IEEE International Conference on Electron Devices and Solid-State …, 2015
142015
Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly along the Channel
MY Kao, YK Lin, H Agarwal, YH Liao, P Kushwaha, A Dasgupta, ...
IEEE Electron Device Letters 40 (5), 822-825, 2019
132019
Characterisation of RF Noise in UTBB FD-SOI MOSFET
P Kushwaha, A Dasgupta, Y Sahu, S Khandelwal, C Hu, YS Chauhan
IEEE Journal of Electron Devices Society 4 (6), 2016
132016
BSIM compact model of quantum confinement in advanced nanosheet FETs
A Dasgupta, SS Parihar, P Kushwaha, H Agarwal, MY Kao, S Salahuddin, ...
IEEE Transactions on Electron Devices 67 (2), 730-737, 2020
122020
Spacer Engineering in Negative Capacitance FinFETs
YK Lin, H Agarwal, MY Kao, J Zhou, YH Liao, A Dasgupta, P Kushwaha, ...
IEEE Electron Device Letters 40 (6), 1009-1012, 2019
112019
Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology node
P Kushwaha, H Agarwal, YK Lin, A Dasgupta, MY Kao, Y Lu, Y Yue, ...
IEEE Electron Device Letters 40 (6), 985-988, 2019
102019
Compact Modeling of Cross-Sectional Scaling in Gate-All-Around FETs: 3-D to 1-D Transition
A Dasgupta, P Rastogi, A Agarwal, C Hu, YS Chauhan
IEEE Transactions on Electron Devices, 2018
102018
GaN HEMT Modeling for Power and RF Applications using ASM-HEMT
S Ghosh, SA Ahsan, A Dasgupta, S Khandelwal, YS Chauhan
IEEE International Conference on Emerging Electronics (ICEE, 2016
92016
An Improved Model for Quasi-Ballistic Transport in MOSFETs
A Dasgupta, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 64 (7), 3032-3036, 2017
82017
Modeling of Induced Gate Thermal Noise in HEMTs
A Dasgupta, YS Chauhan
IEEE Microwave and Wireless Components Letters 26 (6), 428-430, 2016
72016
The system can't perform the operation now. Try again later.
Articles 1–20