Ajit Kumar Panda
Title
Cited by
Cited by
Year
DC and high-frequency characteristics of GaN-based IMPATTs
AK Panda, D Pavlidis, E Alekseev
IEEE Transactions on Electron Devices 48 (4), 820-823, 2001
792001
Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT
TR Lenka, AK Panda
Semiconductors 45 (5), 650-656, 2011
722011
Noise in mixed tunneling avalanche transit time (MITATT) diodes
GN Dash, JK Mishra, AK Panda
Solid-state electronics 39 (10), 1473-1479, 1996
441996
An extremely low noise heterojunction IMPATT
JK Mishra, AK Panda, GN Dash
IEEE transactions on electron devices 44 (12), 2143-2148, 1997
421997
Noise characteristics of GaN-based IMPATTs
AK Panda, D Pavlidis, EA Alekseev
IEEE Transactions on Electron Devices 48 (7), 1473-1475, 2001
382001
Computer-aided studies on the wide-band microwave characteristics of a silicon double avalanche region (DAR) diode
AK Panda, GN Dash, SP Pati
Semiconductor science and technology 10 (6), 854, 1995
361995
Software reliability allocation of digital relay for transmission line protection using a combined system hierarchy and fault tree approach
DS Roy, DK Mohanta, AK Panda
IET software 2 (5), 437-445, 2008
342008
Enhancement of multisubband electron mobility in parabolic AlxGa1−xAs-GaAs double quantum well structures
T Sahu, S Palo, AK Panda
Journal of Applied Physics 113 (8), 083704, 2013
312013
FPGA design of a fast 32-bit floating point multiplier unit
A Jain, B Dash, AK Panda, M Suresh
2012 International Conference on Devices, Circuits and Systems (ICDCS), 545-547, 2012
262012
AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers
TR Lenka, AK Panda
Pramana 79 (1), 151-163, 2012
252012
Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al, In) N/GaN-based HEMT
TR Lenka, AK Panda
Semiconductors 45 (9), 1211-1218, 2011
252011
Effect of structural parameters on 2DEG density and C~V characteristics of AlxGa1−xN/AlN/GaN-based HEMT
TR Lenka, AK Panda
NISCAIR-CSIR, India, 2011
242011
Choice of detection parameters on fault detection in wireless sensor networks: A multiobjective optimization approach
A Mahapatro, AK Panda
Wireless personal communications 78 (1), 649-669, 2014
212014
RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT
TR Lenka, GN Dash, AK Panda
Journal of Semiconductors 34 (11), 114003, 2013
212013
Enhancement of multisubband electron mobility in square-parabolic asymmetric double quantum well structure
N Sahoo, AK Panda, T Sahu
Superlattices and Microstructures 105, 11-21, 2017
182017
Enhancement of electron mobility in asymmetric coupled quantum well structures
S Das, RK Nayak, T Sahu, AK Panda
Journal of Applied Physics 115 (7), 073701, 2014
172014
Design of 16-QAM transmitter and receiver: review of methods of implementation in FPGA
R Swain, AK Panda
International Journal of Engineering and Science 1 (9), 23-27, 2012
172012
Self-consistent subband calculations of AlxGa1-xN/(AlN)/GaN-based high electron mobility transistor
TR Lenka, AK Panda
Advanced Materials Research 159, 342-347, 2011
152011
Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric
P Vimala, TSA Samuel, D Nirmal, AK Panda
Solid State Electronics Letters 1 (2), 64-72, 2019
132019
Design optimization of a single-sided Si/SiGe heterostructure mixed tunnelling avalanche transit time double drift region
JK Mishra, AK Panda, GN Dash
Semiconductor science and technology 12 (12), 1635, 1997
121997
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