Arvind Kumar
TitleCited byYear
High performance sol–gel spin-coated titanium dioxide dielectric based MOS structures
A Kumar, S Mondal, SG Kumar, KSRK Rao
Materials Science in Semiconductor Processing 40, 77-83, 2015
222015
Low temperature solution processed high-κ ZrO2 gate dielectrics for nanoelectonics
A Kumar, S Mondal, KSRK Rao
Applied Surface Science 370, 373-379, 2016
172016
Critical investigation of high performance spin-coated high-κ titania thin films based MOS capacitor
A Kumar, S Mondal, KSRK Rao
Journal of Materials Science: Materials in Electronics 27 (5), 5264-5270, 2016
162016
DLTS analysis of amphoteric interface defects in high-TiO2 MOS structures prepared by sol-gel spin-coating
A Kumar, S Mondal, KSRK Rao
AIP Advances 5 (11), 117122, 2015
132015
Tunable dielectric properties of TiO2 thin film based MOS systems for application in microelectronics
S Mondal, A Kumar
Superlattices and Microstructures 100, 876-885, 2016
92016
Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications
A Kumar, S Mondal, KSR Koteswara Rao
Journal of Applied Physics 121 (8), 085301, 2017
82017
High-κ TiO2 thin film prepared by sol-gel spin-coating method
A Kumar, S Mondal, KSRK Rao
AIP Conference Proceedings 1665 (1), 080015, 2015
62015
AIP Adv. 5, 117122 (2015)
A Kumar, S Mondal, K Rao
6
Experimental evidences of charge transition levels in ZrO2 and at the Si: ZrO2 interface by deep level transient spectroscopy
A Kumar, S Mondal, KSR Koteswara Rao
Applied Physics Letters 110 (13), 132904, 2017
32017
Highly reliable spin-coated titanium dioxide dielectric
S Mondal, A Kumar, KSRK Rao, V Venkataraman
AIP Conference Proceedings 1731 (1), 080017, 2016
32016
Scaling behavior of fully spin-coated TFT
S Mondal, A Kumar, KSRK Rao, V Venkataraman
AIP Conference Proceedings 1832 (1), 060030, 2017
12017
Electrical study of Al/HfO2/p-Si (100) gate stack
A Kumar, S Mondal, KSRK Rao
AIP Conference Proceedings 1731 (1), 080034, 2016
12016
Zirconium doped TiO2 thin films: A promising dielectric layer
A Kumar, S Mondal, KSRK Rao
AIP Conference Proceedings 1728 (1), 020582, 2016
12016
Facile fabrication and electrical investigations of nanostructured p-Si/n-TiO2 hetero-junction diode
A Kumar, S Mondal, KSRK Rao
AIP Conference Proceedings 1953 (1), 050029, 2018
2018
Electrical behaviour of fully solution processed HfO2 (MOS) in presence of different light illumination
S Mondal
AIP Conference Proceedings 1942 (1), 060007, 2018
2018
Improved Performance of TiO2 based MOS Capacitor with Ultra-thin Al2O3 Layer
A Kumar, S Mondal, KSR Rao
Bulletin of the American Physical Society, 2018
2018
DLTS analysis and Interface engineering of solution route fabricated Zirconia based MIS devices using plasma treatment
A Kumar, S Mondal, KSRK Rao
Journal of Electronic Materials 47 (2), 955-960, 2018
2018
Band alignment and electrical investigations of ultra-thin Al2O3 on Si by E-beam evaporation
A Kumar, S Mondal, KSRK Rao
AIP Conference Proceedings 1832 (1), 080068, 2017
2017
Impact of time-dependent annealing on TiO2 films for CMOS application
Gyanan, S Mondal, A Kumar
AIP Conference Proceedings 1832 (1), 080075, 2017
2017
Probing the oxygen vacancy related defect states in HfO gate dielectric using DLTS
A Kumar, S Mondal, K Rao
Bulletin of the American Physical Society 62, 2017
2017
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Articles 1–20