| Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 F Alema, Y Zhang, A Osinsky, N Valente, A Mauze, T Itoh, JS Speck APL Materials 7 (12), 121110, 2019 | 93 | 2019 |
| Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, E Ahmadi, JS Speck Applied Physics Letters 117 (22), 222102, 2020 | 63 | 2020 |
| Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition E Farzana, F Alema, WY Ho, A Mauze, T Itoh, A Osinsky, JS Speck Applied Physics Letters 118 (16), 162109, 2021 | 58 | 2021 |
| Modeling and analysis for thermal management in gallium oxide field-effect transistors C Yuan, Y Zhang, R Montgomery, S Kim, J Shi, A Mauze, T Itoh, JS Speck, ... Journal of Applied Physics 127 (15), 154502, 2020 | 55 | 2020 |
| Metal oxide catalyzed epitaxy (MOCATAXY) of -Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, F Wu, JS Speck APL Materials 8 (2), 021104, 2020 | 49 | 2020 |
| H2O vapor assisted growth of β-Ga2O3 by MOCVD F Alema, Y Zhang, A Mauze, T Itoh, JS Speck, B Hertog, A Osinsky AIP Advances 10 (8), 085002, 2020 | 31 | 2020 |
| Thermal management strategies for gallium oxide vertical trench-fin MOSFETs RH Montgomery, Y Zhang, C Yuan, S Kim, J Shi, T Itoh, A Mauze, ... Journal of Applied Physics 129 (8), 085301, 2021 | 26 | 2021 |
| Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers A Bhattacharyya, C Peterson, T Itoh, S Roy, J Cooke, S Rebollo, P Ranga, ... APL Materials 11 (2), 021110, 2023 | 18 | 2023 |
| Fabrication of InGaN thin-film transistors using pulsed sputtering deposition T Itoh, A Kobayashi, K Ueno, J Ohta, H Fujioka Scientific reports 6, 29500, 2016 | 18 | 2016 |
| Over 1 kV Vertical GaN-on-GaN pn Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy E Farzana, J Wang, M Monavarian, T Itoh, KS Qwah, ZJ Biegler, ... IEEE Electron Device Letters 41 (12), 1806-1809, 2020 | 16 | 2020 |
| Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy T Itoh, A Mauze, Y Zhang, JS Speck Applied Physics Letters 117 (15), 152105, 2020 | 15 | 2020 |
| Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes E Farzana, A Bhattacharyya, NS Hendricks, T Itoh, S Krishnamoorthy, ... APL Materials 10 (11), 111104, 2022 | 14 | 2022 |
| High-current-density indium nitride ultrathin-film transistors on glass substrates T Itoh, A Kobayashi, J Ohta, H Fujioka Applied Physics Letters 109 (14), 142104, 2016 | 14 | 2016 |
| Highly conductive epitaxial β-Ga2O3 and β-(Al x Ga1− x) 2O3 films by MOCVD F Alema, T Itoh, S Vogt, JS Speck, A Osinsky Japanese Journal of Applied Physics 61 (10), 100903, 2022 | 11 | 2022 |
| Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy A Mauze, Y Zhang, T Itoh, TE Mates, H Peelaers, CG Van de Walle, ... Journal of Applied Physics 130 (23), 235301, 2021 | 10 | 2021 |
| Coherently strained (001) β-(AlxGa1−x)2O3 thin films on β-Ga2O3: Growth and compositional analysis A Mauze, T Itoh, Y Zhang, E Deagueros, F Wu, JS Speck Journal of Applied Physics 132 (11), 115302, 2022 | 5 | 2022 |
| β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels Y Zhang, A Mauze, F Alema, A Osinsky, T Itoh, JS Speck Japanese Journal of Applied Physics 60 (1), 014001, 2020 | 5 | 2020 |
| Continuous Si doping in (010) and (001) β-Ga2O3 films by plasma-assisted molecular beam epitaxy T Itoh, A Mauze, Y Zhang, JS Speck APL Materials 11 (4), 041108, 2023 | 3 | 2023 |
| Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3 K Huynh, ME Liao, A Mauze, T Itoh, X Yan, JS Speck, X Pan, MS Goorsky APL Materials 10 (1), 011110, 2022 | 3 | 2022 |
| N2O grown high Al composition nitrogen doped β-(AlGa) 2O3/β-Ga2O3 using MOCVD F Alema, T Itoh, W Brand, M Tadjer, A Osinsky, JS Speck Journal of Vacuum Science & Technology A 41 (4), 2023 | 1 | 2023 |
Jim SpeckProfessor of Materials, UCSBVerified email at ucsb.edu
