Follow
Prof.Dr.Krishnan Baskar
Title
Cited by
Cited by
Year
MOCVD growth of high efficiency current-matched AlGaAsSi tandem solar cell
T Soga, K Baskar, T Kato, T Jimbo, M Umeno
Journal of crystal growth 174 (1-4), 579-584, 1997
821997
Optical and field-emission properties of ZnO nanostructures deposited using high-pressure pulsed laser deposition
T Premkumar, YS Zhou, YF Lu, K Baskar
ACS applied materials & interfaces 2 (10), 2863-2869, 2010
812010
Studies on electron beam evaporated ZrO2/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors
K Balachander, S Arulkumaran, H Ishikawa, K Baskar, T Egawa
physica status solidi (a) 202 (2), R16-R18, 2005
722005
Synthesis, structural, morphological and electrical properties of NBT–BT ceramics for piezoelectric applications
SR Kanuru, K Baskar, R Dhanasekaran
Ceramics International 42 (5), 6054-6064, 2016
622016
Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy
M Balaji, A Claudel, V Fellmann, I Gélard, E Blanquet, R Boichot, A Pierret, ...
Journal of Alloys and Compounds 526, 103-109, 2012
462012
Heteroepitaxial technologies on Si for high-efficiency solar cells
M Umeno, T Soga, K Baskar, T Jimbo
Solar energy materials and solar cells 50 (1-4), 203-212, 1998
431998
2 MeV ion irradiation effects on AlGaN/GaN HFET devices
G Sonia, E Richter, F Brunner, A Denker, R Lossy, M Mai, F Lenk, ...
Solid-state electronics 52 (7), 1011-1017, 2008
382008
Growth and comparison of single crystals and polycrystalline brownmillerite Ca2Fe2O5
S Dhankhar, G Bhalerao, S Ganesamoorthy, K Baskar, S Singh
Journal of Crystal Growth 468, 311-315, 2017
322017
Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy
A Claudel, V Fellmann, I Gélard, N Coudurier, D Sauvage, M Balaji, ...
Thin Solid Films 573, 140-147, 2014
322014
Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth
YT Sun, K Baskar, S Lourdudoss
Journal of Applied physics 94 (4), 2746-2748, 2003
312003
Anomalous room temperature magnetoresistance in brownmillerite Ca 2 Fe 2 O 5
S Dhankhar, K Gupta, G Bhalerao, N Shukla, M Chandran, B Francis, ...
RSC Advances 5 (112), 92549-92553, 2015
302015
Hydrothermal synthesis of chalcopyrite CuInS2, CuInSe2 and CuInTe2 nanocubes and their characterization
S Sugan, K Baskar, R Dhanasekaran
Current Applied Physics 14 (11), 1416-1420, 2014
302014
Growth and characterization of tris thiourea magnesium zinc sulphate single crystals
N Bhuvaneswari, K Baskar, R Dhanasekaran
Optik 126 (23), 3731-3736, 2015
292015
Fabrication of Schottky barrier diodes on clump of gallium nitride nanowires grown by chemical vapour deposition
S Sanjay, K Baskar
Applied Surface Science 456, 526-531, 2018
262018
Structural and optical characterization of AlGaN/GaN layers
M Jayasakthi, R Ramesh, P Arivazhagan, R Loganathan, K Prabakaran, ...
Journal of crystal growth 401, 527-531, 2014
262014
Particulate assisted growth of ZnO nanorods and microrods by pulsed laser deposition
T Premkumar, P Manoravi, BK Panigrahi, K Baskar
Applied surface science 255 (15), 6819-6822, 2009
262009
Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator
K Balachander, S Arulkumaran, T Egawa, Y Sano, K Baskar
Materials Science and Engineering: B 119 (1), 36-40, 2005
262005
Synthesis and characterization of nanocrystalline gallium nitride by nitridation of Ga-EDTA complex
V Ganesh, S Suresh, M Balaji, K Baskar
Journal of Alloys and Compounds 498 (1), 52-56, 2010
252010
Fabrication of AlGaN/GaN double‐insulator metal–oxide–semiconductor high‐electron‐mobility transistors using SiO2 and SiN as gate insulators
K Balachander, S Arulkumaran, Y Sano, T Egawa, K Baskar
physica status solidi (a) 202 (4), R32-R34, 2005
252005
Epitaxy of gallium nitride pyramids on few layer graphene for metal-semiconductor-metal based photodetectors
S Sanjay, K Prabakaran, K Baskar
Materials Chemistry and Physics 240, 122189, 2020
222020
The system can't perform the operation now. Try again later.
Articles 1–20