Manish Mathew
Manish Mathew
Principal Scientist, CSIR-CEERI, Pilani
Verified email at ceeri.ernet.in - Homepage
Title
Cited by
Cited by
Year
Semiconductor light-emitting element
MM H Togawa, M Sugiyama
US Patent 15/525,057, 2017
29*2017
Semiconductor light-emitting element
MM T Fujiwara, M Sugiyama
US Patent 15/525,055,, 2017
19*2017
Semiconductor light-emitting element
MM G Meiki, M Sugiyama
US Patent 15/525,056, 2017
12*2017
Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications
BC Joshi, M Mathew, BC Joshi, D Kumar, C Dhanavantri
Pramana 74 (1), 135-141, 2010
102010
Droop-multimode trade-off in GaN-InGaN LEDs: Effect of polarization-matched AlInGaN blocking layers
V Pendem, S Adhikari, M Mathew, S Singh, S Pal
Superlattices and Microstructures 88, 344-353, 2015
62015
Design and fabrication of InGaN/GaN superlattice-based solar cell using photonic crystal structure
ND Gupta, V Janyani, M Mathew, M Kumari, R Singh
JOURNAL OF NANOPHOTONICS 12 (4), 2018
52018
Light emitting diode element and method of manufacturing the same
M Sugiyama, M Mathew, Y Nakano, H Sodabanlu
US Patent 9,577,148, 2017
52017
Modeling for high efficiency GaN/InGaN solar cell
M Thosar, M Mathew
IOSR J. Electr. Electron. Eng 4 (1), 1-4, 2013
52013
Fabrication of GaN/InGaN MQW blue light emitting diode
GS Padma, S Singh, M Mathew, K Singh, BC Joshi, S Das, C Dhanavantri
Journal of Optics 41 (4), 198-200, 2012
52012
Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications
RSK Kuldip Singh, Ashok Chauhan, Manish Mathew, Rajesh Punia, Sher Singh ...
Applied Physics A, 2019
42019
Effects of an undoped-InGaN waveguide on the optical confinement and carrier dynamics of InGaN laser diodes
A Paliwal, K Singh, M Mathew
Laser Physics 28 (12), 126204, 2018
42018
Semiconductor light-emitting element
Y Fujii, M Sugiyama, M Manish
US Patent 10,062,805, 2018
32018
Delta doping: New technique to reduce current crowding problem in III-nitride LEDs
BC Joshi, N Pradhan, M Mathew, K Singh, C Dhanavantri, D Kumar
Optoelectronics and Advanced Materials-Rapid Communications 3, 985-988, 2009
32009
Strain-free GaN/InAlN chirped short-period superlattice electron-blocking layer for 450 nm InGaN laser diode
KSMM Avinash Paliwal
Laser Phys 29, 056204, 2019
22019
Orange/yellow InGaN/AlN nanodisk light emitting diodes
M Mathew, H Sodabanalu, M Sugiyama, Y Nakano
physica status solidi (c) 10 (11), 1525-1528, 2013
22013
Critical analysis of step-graded polarisation engineered electron-blocking layer optimisation for InGaN MQW laser diode
A Paliwal, K Singh, M Mathew
IET Optoelectronics 13 (5), 254-258, 2019
12019
A novel numerical approach for the calculation of refractive index of Wurtzite InxGa1−xN
MMNDG Dhanu Chettri, Khomdram Jolson Singh
International Journal of Modern Physics B 32 (28), 2018
12018
Direct Epitaxial Lateral Overgrowth of GaN on Sapphire
V Sadasivan, M Mathew
International Workshop on the Physics of Semiconductor and Devices, 263-267, 2017
12017
Effect of Temperature Annealing on Electrical and Optical Properties of Ni/Au/ITO Contacts to p-type GaN
RPRSK Kuldip Singh, Ashok Chauhan, Manish Mathew,Pawan Kumar
IOSR Journal ofApplied Physics (IOSR-JAP) 9 (4), 48-52, 2017
1*2017
Light trapping in p-i-n superlattice based InGaN/GaN solar cells using photonic crystal
NDGVJM Mathew
Optical and Quantum Electronics 48 (502), 2016
12016
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Articles 1–20