Manish Mathew
Manish Mathew
Principal Scientist, CSIR-CEERI, Pilani
Verified email at ceeri.ernet.in - Homepage
Title
Cited by
Cited by
Year
Semiconductor light-emitting element
MM H Togawa, M Sugiyama
US Patent 15/525,057, 2017
29*2017
Semiconductor light-emitting element
MM T Fujiwara, M Sugiyama
US Patent 15/525,055,, 2017
20*2017
Semiconductor light-emitting element
MM G Meiki, M Sugiyama
US Patent 15/525,056, 2017
12*2017
Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications
BC Joshi, M Mathew, BC Joshi, D Kumar, C Dhanavantri
Pramana 74 (1), 135-141, 2010
112010
Design and fabrication of InGaN/GaN superlattice-based solar cell using photonic crystal structure
ND Gupta, V Janyani, M Mathew, M Kumari, R Singh
JOURNAL OF NANOPHOTONICS 12 (4), 2018
72018
Droop-multimode trade-off in GaN-InGaN LEDs: Effect of polarization-matched AlInGaN blocking layers
V Pendem, S Adhikari, M Mathew, S Singh, S Pal
Superlattices and Microstructures 88, 344-353, 2015
72015
Effects of an undoped-InGaN waveguide on the optical confinement and carrier dynamics of InGaN laser diodes
A Paliwal, K Singh, M Mathew
Laser Physics 28 (12), 126204, 2018
62018
Light emitting diode element and method of manufacturing the same
M Sugiyama, M Mathew, Y Nakano, H Sodabanlu
US Patent 9,577,148, 2017
62017
Modeling for high efficiency GaN/InGaN solar cell
M Thosar, M Mathew
IOSR J. Electr. Electron. Eng 4 (1), 1-4, 2013
52013
Fabrication of GaN/InGaN MQW blue light emitting diode
GS Padma, S Singh, M Mathew, K Singh, BC Joshi, S Das, C Dhanavantri
Journal of Optics 41 (4), 198-200, 2012
52012
Strain-free GaN/InAlN chirped short-period superlattice electron-blocking layer for 450 nm InGaN laser diode
KSMM Avinash Paliwal
Laser Phys 29, 056204, 2019
42019
Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications
RSK Kuldip Singh, Ashok Chauhan, Manish Mathew, Rajesh Punia, Sher Singh ...
Applied Physics A, 2019
32019
Semiconductor light-emitting element
Y Fujii, M Sugiyama, M Manish
US Patent 10,062,805, 2018
32018
Orange/yellow InGaN/AlN nanodisk light emitting diodes
M Mathew, H Sodabanalu, M Sugiyama, Y Nakano
physica status solidi (c) 10 (11), 1525-1528, 2013
32013
Delta doping: New technique to reduce current crowding problem in III-nitride LEDs
BC Joshi, N Pradhan, M Mathew, K Singh, C Dhanavantri, D Kumar
Optoelectronics and Advanced Materials-Rapid Communications 3 (October 2009 …, 2009
32009
Hole injection enhancement in InGaN laser diodes
KSMM Avinash Paliwal
Photonics, 1-2, 2018
2*2018
Light trapping in p-i-n superlattice based InGaN/GaN solar cells using photonic crystal
NDGVJM Mathew
Optical and Quantum Electronics 48 (502), 2016
22016
GaN/InAlN chirped short period superlattice as strain free top cladding for blue laser diode
A Paliwal, K Singh, M Mathew
Semiconductor Science and Technology 35 (4), 045022, 2020
12020
Effects of electron blocking layer configuration on the dynamics of laser diodes emitting at 450 nm
KSMM Avinash Paliwal
Laser Phys 30, 016210, 2019
12019
Critical analysis of step-graded polarisation engineered electron-blocking layer optimisation for InGaN MQW laser diode
A Paliwal, K Singh, M Mathew
IET Optoelectronics 13 (5), 254-258, 2019
12019
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