| Semiconductor light-emitting element MM H Togawa, M Sugiyama US Patent 15/525,057, 2017 | 31* | 2017 |
| Semiconductor light-emitting element MM T Fujiwara, M Sugiyama US Patent 15/525,055,, 2017 | 25* | 2017 |
| Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications BC Joshi, M Mathew, BC Joshi, D Kumar, C Dhanavantri Pramana 74, 135-141, 2010 | 17 | 2010 |
| Design and fabrication of InGaN/GaN superlattice-based solar cell using photonic crystal structure ND Gupta, V Janyani, M Mathew, M Kumari, R Singh JOURNAL OF NANOPHOTONICS 12 (4), 2018 | 14 | 2018 |
| Semiconductor light-emitting element MM G Meiki, M Sugiyama US Patent 15/525,056, 2017 | 13* | 2017 |
| Light trapping in p-i-n superlattice based InGaN/GaN solar cells using photonic crystal NDGVJM Mathew Optical and Quantum Electronics 48 (502), 2016 | 12 | 2016 |
| Strain-free GaN/InAlN chirped short-period superlattice electron-blocking layer for 450 nm InGaN laser diode KSMM Avinash Paliwal Laser Phys 29, 056204, 2019 | 10 | 2019 |
| Effects of an undoped-InGaN waveguide on the optical confinement and carrier dynamics of InGaN laser diodes A Paliwal, K Singh, M Mathew Laser Physics 28 (12), 126204, 2018 | 10 | 2018 |
| Flame kernel growth study of spark ignited hydrogen air premixed combustion at engine conditions P Kumar, PA Kishan, MN Mathew, A Dhar Thermal Science and Engineering Progress 21, 100769, 2021 | 9 | 2021 |
| GaN/InAlN chirped short period superlattice as strain free top cladding for blue laser diode A Paliwal, K Singh, M Mathew Semiconductor Science and Technology 35 (4), 045022, 2020 | 8 | 2020 |
| Formation of non-alloyed Ti/Al/Ni/Au low-resistance ohmic contacts on reactively ion-etched n-type GaN by surface treatment for GaN light-emitting diodes applications RSK Kuldip Singh, Ashok Chauhan, Manish Mathew, Rajesh Punia, Sher Singh ... Applied Physics A, 2019 | 8 | 2019 |
| Effects of electron blocking layer configuration on the dynamics of laser diodes emitting at 450 nm KSMM Avinash Paliwal Laser Phys 30, 016210, 2019 | 7 | 2019 |
| Droop-multimode trade-off in GaN-InGaN LEDs: Effect of polarization-matched AlInGaN blocking layers V Pendem, S Adhikari, M Mathew, S Singh, S Pal Superlattices and Microstructures 88, 344-353, 2015 | 7 | 2015 |
| Modeling for high efficiency GaN/InGaN solar cell M Thosar, M Mathew IOSR J. Electr. Electron. Eng 4 (1), 1-4, 2013 | 6 | 2013 |
| Fabrication of GaN/InGaN MQW blue light emitting diode GS Padma, S Singh, M Mathew, K Singh, BC Joshi, S Das, C Dhanavantri Journal of Optics 41, 198-200, 2012 | 6 | 2012 |
| Effects of chirped barrier thickness on InGaN/GaN and InGaN/InGaN MQW LEDs I Mazumder, K Sapra, A Paliwal, A Chauhan, M Mathew, K Singh Indian Journal of Physics 97 (12), 3653-3660, 2023 | 5 | 2023 |
| Orange/yellow InGaN/AlN nanodisk light emitting diodes M Mathew, H Sodabanalu, M Sugiyama, Y Nakano physica status solidi (c) 10 (11), 1525-1528, 2013 | 5 | 2013 |
| Effects of AlInN graded polarization-dependent doped top cladding on the performance of deep ultra-violet laser diode emitting at∼ 271 nm wavelength A Paliwal, K Singh, M Mathew Semiconductor Science and Technology 36 (1), 015006, 2020 | 4 | 2020 |
| Critical analysis of step‐graded polarisation engineered electron‐blocking layer optimisation for InGaN MQW laser diode A Paliwal, K Singh, M Mathew IET Optoelectronics 13 (5), 254-258, 2019 | 4 | 2019 |
| Semiconductor light-emitting element Y Fujii, M Sugiyama, M Manish US Patent 10,062,805, 2018 | 3 | 2018 |
Dr. Kuldip SinghSr. Principal Scientist, CSIR-CEERIVerified email at ceeri.res.in
