| Introduction to nano: basics to nanoscience and nanotechnology A Sengupta, CK Sarkar Springer, 2015 | 64 | 2015 |
| Effect of channel thickness and doping concentration on sub-threshold performance of Graded Channel and gate stack DG MOSFETs SK Swain, S Adak, B Sharma, SK Pati, CK Sarkar Journal of Low Power Electronics 11 (3), 366-372, 2015 | 15 | 2015 |
| Computational Study of Adsorption behavior of CH4N2O and CH3OH on Fe decorated MoS2 monolayer B Chettri, A Thapa, SK Das, P Chettri, B Sharma Solid State Electronics Letters 3, 32-41, 2021 | 11 | 2021 |
| Ab-initio study of LD-HfO2, Al2O3, La2O3 and h-BN for application as dielectrics in MTJ memory device B Sharma, A Thapa, A Sarkar Superlattices and Microstructures 150, 106753, 2021 | 10 | 2021 |
| Gate-on-drain overlapped L-shaped channel tunnel FET as label-free biosensor S Das, B Sharma Silicon 14 (9), 4899-4905, 2022 | 9 | 2022 |
| First principle insight into co-doped MoS2 for sensing NH3 and CH4 B Chettri, A Thapa, SK Das, P Chettri, B Sharma Facta Universitatis, Series: Electronics and Energetics 35 (1), 043-059, 2022 | 9 | 2022 |
| Analysis of tunneling currents in multilayer black phosphorous and non-volatile flash memory cells B Sharma, A Mukhopadhyay, A Sengupta, H Rahaman, CK Sarkar Journal of Computational Electronics 15 (1), 129-137, 2016 | 9 | 2016 |
| First principle study of Rh/Ru doped pentagonal PdSe2 for detection of SO2 and SO3 gas B Chettri, A Sharma, SK Das, B Sharma Materials Today: Proceedings 58, 696-701, 2022 | 8 | 2022 |
| Ab initio study of mono-layer 2-D insulators (X-(OH)2 and h-BN) and their use in MTJ memory device B Sharma, A Mukhopadhyay, L Banerjee, A Sengupta, H Rahaman, ... Microsystem Technologies 25, 1909-1917, 2019 | 8 | 2019 |
| First Principle Study of MoS2 adsorbed Transition Metal for Sensing NH3 and CH4 P Karki, B Chettri, A Thapa, P Chettri, B Sharma 2021 Devices for Integrated Circuit (DevIC), 659-661, 2021 | 6 | 2021 |
| Enhanced adsorption and sensitivity for SF6 decomposition gas detection on penta PdSe2 monolayer: A Density Functional Theory investigation with van der Waals correction B Chettri, P Karki, P Chettri, SK Das, B Kunwar, B Sharma Materials Today Communications 37, 107019, 2023 | 5 | 2023 |
| First Principle Study of MoS2 adsorbed Transition Metal for Sensing Urea and Methanol P Sharma, M Lepcha, B Chettri, A Thapa, P Chettri, B Sharma 2021 Devices for Integrated Circuit (DevIC), 655-658, 2021 | 5 | 2021 |
| Channel Estimation using LS and MMSE Algorithm B Dey, S Lal, A Kumar, N Kumar, P Kumar, B Sharma International Journal of Computer Applications, 2011 | 4 | 2011 |
| Computational study of CNT based nanoscale reversible mass transport archival memory with Fe, Co and Ni nano-shuttles B Sharma, A Sengupta, CK Sarkar Computational Materials Science 146, 112-118, 2018 | 3 | 2018 |
| Effect of Ca(OH)2, hBN and Mg(OH)2 based insulators as composite oxides in magnetic tunnel junction memory device properties B Sharma, A Mukhopadhyay, L Banerjee, A Sengupta, H Rahaman, ... 2017 Devices for Integrated Circuit (DevIC), 783-786, 2017 | 3 | 2017 |
| Computation Study of WSe2 Monolayer for Biomarker in Lung Cancer P Karki, B Chettri, P Chettri, SK Das, B Sharma 2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022 | 2 | 2022 |
| Analysis of certain electrical properties in Silicon nanowire field-effect transistors with high-κ HfO2 as gate dielectrics SK Das, B Chettri, P Karki, P Chettri, U Deka, B Sharma 2022 IEEE International Conference of Electron Devices Society Kolkata …, 2022 | 2 | 2022 |
| Investigation on low temperature photoluminescence properties of GO-ZnO composite for UV detection application SK Das, B Chettri, P Chettri, U Deka, V Mukherjee, B Sharma Materials Today: Proceedings 58, 758-760, 2022 | 2 | 2022 |
| Performance analysis of Ni3GeFe2/Fe3GeTe2 composites as ferromagnetic layer in MTJ memory devices B Chettri, B Sharma, A Thapa, P Chettri, B Sharma 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 494-499, 2020 | 2 | 2020 |
| Stability Performance Comparison of a MTJ Memory Device Using Low-Dimensional HfO2, A12O3, La2O3 and h-BN as Composite Dielectric A Thapa, CK Sarkar, B Sharma 2018 IEEE Electron Devices Kolkata Conference (EDKCON), 642-646, 2018 | 2 | 2018 |
Amretashis SenguptaComputational Materials ScientistVerified email at ieee.org
