| Analysis of temperature dependent current-voltage and capacitance-voltage characteristics of an Au/V2O5/n-Si Schottky diode S Mahato, D Biswas, LG Gerling, C Voz, J Puigdollers AIP Advances 7 (8), 2017 | 78 | 2017 |
| Effect of excess hafnium on HfO2 crystallization temperature and leakage current behavior of HfO2/Si metal-oxide-semiconductor devices D Biswas, MN Singh, AK Sinha, S Bhattacharyya, S Chakraborty Journal of Vacuum Science & Technology B 34 (2), 2016 | 23 | 2016 |
| Elimination of the low resistivity of Si substrates in GaN HEMTs by introducing a SiC intermediate and a thick nitride layer A Bose, D Biswas, S Hishiki, S Ouchi, K Kitahara, K Kawamura, ... IEEE Electron Device Letters 41 (10), 1480 - 1483, 2020 | 17 | 2020 |
| Defect states assisted charge conduction in Au/MoO3–x/n-Si Schottky barrier diode S Mahato, C Voz, D Biswas, S Bhunia, J Puigdollers Materials Research Express 6 (3), 036303, 2018 | 17 | 2018 |
| A temperature stable amplifier characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si A Bose, D Biswas, S Hishiki, S Ouchi, K Kitahara, K Kawamura, ... IEEE Access 9, 57046 - 57053, 2021 | 14 | 2021 |
| Size and density controlled Ag nanocluster embedded MOS structure for memory applications D Biswas, S Mondal, A Rakshit, A Bose, S Bhattacharyya, S Chakraborty Materials Science in Semiconductor Processing 63, 1-5, 2017 | 14 | 2017 |
| Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures D Biswas, N Torii, H Fujita, T Yoshida, T Kubo, T Egawa Semiconductor Science and Technology 34 (5), 055014, 2019 | 11 | 2019 |
| Effects of oxygen partial pressure and annealing temperature on the residual stress of hafnium oxide thin-films on silicon using synchrotron-based grazing incidence X-ray … D Biswas, AK Sinha, S Chakraborty Applied Surface Science 384, 376-379, 2016 | 11 | 2016 |
| Optimization of annealing temperature for high-κ-based gate oxides using differential scanning calorimetry D Biswas, AK Sinha, S Chakraborty J. Vac. Sci. Technol. B 33, 052205, 2015 | 11 | 2015 |
| Effect of thermal annealing and oxygen partial pressure on the swelling of HfO2/SiO2/Si metal-oxide-semiconductor structure grown by rf sputtering: A synchrotron x-ray … D Biswas, SAK Md Faruque, AK Sinha, A Upadhyay, S Chakraborty Applied Physics Letters 105 (11), 2014 | 10 | 2014 |
| Demonstration of fully-vertical GaN-on-Si power MOSFETs using regrowth technique D Biswas, N Torii, K Yamamoto, T Egawa Electronics Letters 55 (7), 404-406, 2019 | 6 | 2019 |
| Deposition and characterization of vanadium oxide based thin films for MOS device applications A Rakshit, D Biswas, S Chakraborty AIP Conference Proceedings 1942 (1), 2018 | 6 | 2018 |
| GaN/InGaN double quantum well (DQW) gate structure for GaN-on-Si based normally-off AlGaN/GaN high electron mobility transistors (HEMTs) D Biswas, T Tsuboi, T Egawa Materials Science in Semiconductor Processing 135, 106109, 2021 | 5 | 2021 |
| Effect of In composition on electrical performance of AlInGaN/GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on Si D Biswas, H Fujita, N Torii, K Yamamoto, T Egawa Journal of Applied Physics 125 (22), 225707, 2019 | 4 | 2019 |
| Epitaxial regrowth and characterizations of vertical GaN transistors on silicon D Biswas, N Torii, K Yamamoto, T Egawa Semiconductor Science and Technology 34 (9), 095013, 2019 | 3 | 2019 |
| AlGaN/GaN HEMT on 3C-SiC/low-resistivity Si substrate for microwave applications A Wakejima, A Bose, D Biswas, S Hishiki, S Ouchi, K Kitahara, ... IEICE Transactions on Electronics 105 (10), 457-465, 2022 | 2 | 2022 |
| Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si A Bose, D Biswas, S Hishiki, S Ouchi, K Kitahara, K Kawamura, ... IEICE Electronics Express 19 (4), 20210563-20210563, 2022 | 2 | 2022 |
| Influence of rapid thermal annealing on electrical performance and reliability of HfO2 based MOS device D Biswas, SAKM Faruque, S Chakraborty AIP Conference Proceedings 1665 (1), 2015 | 2 | 2015 |
| Development of a linear temperature ramp-based automated system for furnace oxidation of semiconductor wafers SAKM Faruque, D Biswas, S Saha, S Chakraborty International Journal of Instrumentation Technology 1 (4), 259-269, 2015 | 2 | 2015 |
| Role of annealing temperature in the oxide charge distribution in high--based MOS devices: simulation and experiment D Biswas, A Chakraborty, S Chakraborty Journal of Computational Electronics 15 (3), 795-800, 2016 | 1 | 2016 |
Joaquim PuigdollersUPCVerified email at upc.edu
