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Trupti Ranjan Lenka
Trupti Ranjan Lenka
National Institute of Technology Silchar, Assam, INDIA
Verified email at ieee.org - Homepage
Title
Cited by
Cited by
Year
Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT
TR Lenka, AK Panda
Semiconductors 45 (5), 650-656, 2011
852011
The dawn of Ga2O3 HEMTs for high power electronics-A review
R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen
Materials Science in Semiconductor Processing 119, 105216, 2020
722020
Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
HQT Bui, RT Velpula, B Jain, OH Aref, HD Nguyen, TR Lenka, ...
Micromachines 10 (8), 492, 2019
412019
High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes
B Jain, RT Velpula, HQT Bui, HD Nguyen, TR Lenka, TK Nguyen, ...
Optics express 28 (1), 665-675, 2020
372020
A Model for Doubly Clamped Piezoelectric Energy Harvesters with Segmented Electrodes
R Kashyap, TR Lenka, S Baishya
IEEE Electron Device Letters 36 (12), 1369-1372, 2015
322015
Impact of Thin High-K Dielectrics and Gate Metals on RF Characteristics of 3D Double Gate Junctionless Transistor
A Baidya, TR Lenka, S Baishya
Materials Science in Semiconductor Processing 71, 413–420, 2017
312017
AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers
TR Lenka, AK Panda
Pramana 79, 151-163, 2012
312012
Modelling, simulation, optimization of Si/ZnO and Si/ZnMgO heterojunction solar cells
S Vallisree, R Thangavel, TR Lenka
Materials Research Express 6 (2), 025910, 2018
292018
Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al, In) N/GaN-based HEMT
TR Lenka, AK Panda
Semiconductors 45, 1211-1218, 2011
292011
RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT
TR Lenka, GN Dash, AK Panda
Journal of Semiconductors 34 (11), 114003, 2013
262013
Theoretical investigations on enhancement of photovoltaic efficiency of nanostructured CZTS/ZnS/ZnO based Solar Cell device
S Vallisree, R Thangavel, TR Lenka
Journal of Materials Science: Materials in Electronics (JMSE) 29 (9), 7262–7272, 2018
252018
InGaN-based solar cells: a wide solar spectrum harvesting technology for twenty-first century
SR Routray, TR Lenka
CSI Transactions on ICT, 1-14, 2017
252017
Effect of structural parameters on 2DEG density and C~V characteristics of AlxGa1−xN/AlN/GaN-based HEMT
TR Lenka, AK Panda
NISCAIR-CSIR, India, 2011
252011
Mixed-mode simulation and analysis of 3D double gate junctionless nanowire transistor for CMOS circuit applications
A Baidya, TR Lenka, S Baishya
Superlattices and Microstructures 100, 14-23, 2016
242016
Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure
RT Velpula, B Jain, HQT Bui, FM Shakiba, J Jude, M Tumuna, HD Nguyen, ...
Applied Optics 59 (17), 5276-5281, 2020
232020
Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices
K Jena, R Swain, TR Lenka
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016
232016
Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole-Frenkel Emission
R Swain, K Jena, TR Lenka
IEEE Transactions on Electron Devices 63 (6), 2346 - 2352, 2016
202016
Enhanced Photodetection by Glancing Angle Deposited Vertically Aligned TiO2 Nanowires
B Shougaijam, R Swain, C Ngangbam, TR Lenka
IEEE Transactions on Nanotechnology 15 (3), 389 – 394, 2016
202016
Impact of oxide thickness on gate capacitance–Modelling and comparative analysis of GaN-based MOSHEMTs
K JENA, R SWAIN, TR LENKA
Pramana–J. Phys 85 (6), 1221–1232, 2015
192015
Effect of thin gate dielectrics and gate materials on simulated device characteristics of 3D double gate JNT
A Baidya, V Krishnan, S Baishya, TR Lenka
Superlattices and Microstructures 77, 209-218, 2015
192015
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