Trupti Ranjan Lenka
Trupti Ranjan Lenka
National Institute of Technology Silchar, Assam, INDIA
Verified email at - Homepage
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The dawn of Ga2O3 HEMTs for high power electronics-A review
R Singh, TR Lenka, DK Panda, RT Velpula, B Jain, HQT Bui, HPT Nguyen
Materials Science in Semiconductor Processing 119, 105216, 2020
Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT
TR Lenka, AK Panda
Semiconductors 45 (5), 650-656, 2011
Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays
HQT Bui, RT Velpula, B Jain, OH Aref, HD Nguyen, TR Lenka, ...
Micromachines 10 (8), 492, 2019
High performance electron blocking layer-free InGaN/GaN nanowire white-light-emitting diodes
B Jain, RT Velpula, HQT Bui, HD Nguyen, TR Lenka, TK Nguyen, ...
Optics express 28 (1), 665-675, 2020
Modelling, simulation, optimization of Si/ZnO and Si/ZnMgO heterojunction solar cells
S Vallisree, R Thangavel, TR Lenka
Materials Research Express 6 (2), 025910, 2018
Impact of Thin High-K Dielectrics and Gate Metals on RF Characteristics of 3D Double Gate Junctionless Transistor
A Baidya, TR Lenka, S Baishya
Materials Science in Semiconductor Processing 71, 413–420, 2017
A Model for Doubly Clamped Piezoelectric Energy Harvesters with Segmented Electrodes
R Kashyap, TR Lenka, S Baishya
IEEE Electron Device Letters 36 (12), 1369-1372, 2015
AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers
TR Lenka, AK Panda
Pramana 79, 151-163, 2012
Theoretical investigations on enhancement of photovoltaic efficiency of nanostructured CZTS/ZnS/ZnO based Solar Cell device
S Vallisree, R Thangavel, TR Lenka
Journal of Materials Science: Materials in Electronics (JMSE) 29 (9), 7262–7272, 2018
Numerical simulations on CZTS/CZTSe based solar cell with ZnSe as an alternative buffer layer using SCAPS- 1D
A Srivastava, P Dua, TR Lenka, SK Tripathy
Materials Today: Proceedings, 2020
Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure
RT Velpula, B Jain, HQT Bui, FM Shakiba, J Jude, M Tumuna, HD Nguyen, ...
Applied Optics 59 (17), 5276-5281, 2020
Role of nanoscale AlN and InN for the microwave characteristics of AlGaN/(Al, In) N/GaN-based HEMT
TR Lenka, AK Panda
Semiconductors 45, 1211-1218, 2011
Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices
K Jena, R Swain, TR Lenka
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2016
RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMT
TR Lenka, GN Dash, AK Panda
Journal of Semiconductors 34 (11), 114003, 2013
InGaN-based solar cells: a wide solar spectrum harvesting technology for twenty-first century
SR Routray, TR Lenka
CSI Transactions on ICT, 1-14, 2017
Mixed-mode simulation and analysis of 3D double gate junctionless nanowire transistor for CMOS circuit applications
A Baidya, TR Lenka, S Baishya
Superlattices and Microstructures 100, 14-23, 2016
Modeling of Forward Gate Leakage Current in MOSHEMT Using Trap-Assisted Tunneling and Poole-Frenkel Emission
R Swain, K Jena, TR Lenka
IEEE Transactions on Electron Devices 63 (6), 2346 - 2352, 2016
Effect of structural parameters on 2DEG density and C~V characteristics of AlxGa1−xN/AlN/GaN-based HEMT
TR Lenka, AK Panda
NISCAIR-CSIR, India, 2011
A novel β‐Ga2O3 HEMT with fT of 166 GHz and X‐band POUT of 2.91 W/mm
R Singh, TR Lenka, RT Velpula, B Jain, HQT Bui, HPT Nguyen
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2020
Impact of oxide thickness on gate capacitance–Modelling and comparative analysis of GaN-based MOSHEMTs
Pramana–J. Phys 85 (6), 1221–1232, 2015
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