Hiromichi Ohta

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Hideo HosonoTokyo Institute of Technology, National Institute for Materials ScienceVerified email at mces.titech.ac.jp
Toshio KamiyaTokyo Institute of TechnologyVerified email at msl.titech.ac.jp
Kenji NomuraUCSDVerified email at ucsd.edu
Ikuhara YUniverfsity of TokyoVerified email at sigma.t.u-tokyo.ac.jp
Hidenori HiramatsuTokyo Institute of TechnologyVerified email at mces.titech.ac.jp
Shingo OhtaToyota Central R&D Labs. Inc., Toyota Research Institute of North AmericaVerified email at toyota.com
Teruyasu MizoguchiInstitute of Industrial Science, The University of TokyoVerified email at iis.u-tokyo.ac.jp
Hai Jun ChoDepartment of Mechanical Engineering at the University of OttawaVerified email at uottawa.ca
HYOUNG JEEN JEENPusan National UniversityVerified email at pusan.ac.kr
Takayoshi KataseAssociate Professor, Laboratory for Materials and Structures, Tokyo Institute of Technology, JapanVerified email at mces.titech.ac.jp
Sung Wng KimDepartment of Energy Science, Sungkyunkwan UniversityVerified email at skku.edu
Kyu Hyoung LeeDepartment of Materials Science & Engineering, Yonsei UniversityVerified email at yonsei.ac.kr
Anup SanchelaAssistant Professor, Pandit Deendayal Petroleum UniversityVerified email at sot.pdpu.ac.in
Yuqiao ZhangInstitute of Quantum and Sustainable Technology of Jiangsu UniversityVerified email at ujs.edu.cn
Mian WeiPhDVerified email at eis.hokudai.ac.jp
Naoya ShibataThe University of TokyoVerified email at sigma.t.u-tokyo.ac.jp
Taishi TakenobuNagoya UniversityVerified email at nagoya-u.jp
Kaito Kanahashi東京大学　助教Verified email at g.ecc.u-tokyo.ac.jp
N. SarukuraProfessor, Osaka UniversityVerified email at ile.osaka-u.ac.jp
Ho Nyung LeeOak Ridge National LaboratoryVerified email at ornl.gov

Hiromichi Ohta

RIES, Hokkaido University

Verified email at es.hokudai.ac.jp - Homepage

Thermal transistors Thermoelectrics Oxide electronics Materials Science


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Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono Nature 432, 488-492, 2004	8672	2004
Amorphous Oxide And Thin Film Transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent App. 10/592,431, 2007	3901	2007
Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film H Hosono, H Ota, M Orita, K Ueda, M Hirano, T Kamiya US Patent 7,061,014, 2006	3859	2006
Amorphous oxide and thin film transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent 10,032,930, 2018	3721	2018
Amorphous oxide and thin film transistor H Hosono, M Hirano, H Ota, T Kamiya, K Nomura US Patent App. 12/504,158, 2009	3718	2009
LnCuO (S, Se, Te) monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film H Hosono, M Hirano, H Ota, M Orita, H Hiramatsu, K Ueda US Patent 7,323,356, 2008	3713	2008
Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono Science 300, 1269-1272, 2003	3051	2003
Amorphous oxide semiconductors for high-performance flexible thin-film transistors K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono Japanese Journal of Applied Physics 45 (5S), 4303, 2006	1498	2006
Giant thermoelectric Seebeck coefficient of a two-dimensional electron gas in SrTiO3 H Ohta, SW Kim, Y Mune, T Mizoguchi, K Nomura, S Ohta, T Nomura, ... Nature Materials 6 (2), 129-134, 2007	1146	2007
Handbook of Transparent Conductors DS Ginley Springer Verlag, 2010	1130*	2010
Deep-ultraviolet transparent conductive β-Ga2O3 thin films M Orita, H Ohta, M Hirano, H Hosono Applied Physics Letters 77, 4166, 2000	1052	2000
Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)5 films K Nomura, T Kamiya, H Ohta, K Ueda, M Hirano, H Hosono Applied Physics Letters 85 (11), 1993-1995, 2004	970	2004
Amorphous transparent conductive oxide InGaO3(ZnO)m (m ≤ 4): a Zn 4s conductor M Orita, H Ohta, M Hirano, S Narushima, H Hosono Philosophical Magazine B 81 (5), 501-515, 2001	836	2001
Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnO H Ohta, K Kawamura, M Orita, M Hirano, N Sarukura, H Hosono Applied Physics Letters 77 (4), 475-477, 2000	711	2000
High-temperature carrier transport and thermoelectric properties of heavily La-or Nb-doped SrTiO3 single crystals S Ohta, T Nomura, H Ohta, K Koumoto Journal of Applied Physics 97 (3), 034106, 2005	669	2005
Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4 A Takagi, K Nomura, H Ohta, H Yanagi, T Kamiya, M Hirano, H Hosono Thin Solid Films 486 (1), 38-41, 2005	580	2005
Epitaxial growth of transparent p-type conducting CuGaO2 thin films on sapphire (001) substrates by pulsed laser deposition K Ueda, T Hase, H Yanagi, H Kawazoe, H Hosono, H Ohta, M Orita, ... Journal of Applied Physics 89 (3), 1790-1793, 2001	521	2001
Large thermoelectric performance of heavily Nb-doped SrTiO3 epitaxial film at high temperature S Ohta, T Nomura, H Ohta, M Hirano, H Hosono, K Koumoto Applied Physics Letters 87 (9), 092108, 2005	439	2005
Recent progress in oxide thermoelectric materials: p-type Ca3Co4O9 and n-type SrTiO3 H Ohta, K Sugiura, K Koumoto Inorganic chemistry 47 (19), 8429-8436, 2008	435	2008
Transparent oxide optoelectronics H Ohta, H Hosono Materials Today 7 (6), 42-51, 2004	428	2004

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