| Semiconductor manufacturing using modular substrates M Antonell, EC Houge, N Patel, LE Plew, C Vartuli US Patent 6,713,409, 2004 | 204 | 2004 |
| Application of focused ion beam lift‐out specimen preparation to TEM, SEM, STEM, AES and SIMS analysis FA Stevie, CB Vartuli, LA Giannuzzi, TL Shofner, SR Brown, B Rossie, ... Surface and Interface Analysis: An International Journal devoted to the …, 2001 | 135 | 2001 |
| Silicon-on-plastic semiconductor device and method of making the same JC Costa, DM Shuttleworth, MJ Antonell US Patent 9,583,414, 2017 | 76 | 2017 |
| Comprehensive traffic control system MR Elsheemy US Patent 10,121,370, 2018 | 74 | 2018 |
| Composition dependence of solid-phase epitaxy in silicon-germanium alloys: Experiment and theory TE Haynes, MJ Antonell, CA Lee, KS Jones Physical Review B 51 (12), 7762, 1995 | 53 | 1995 |
| Method of manufacture for a semiconductor device JC Costa, DM Shuttleworth, MJ Antonell US Patent 10,062,637, 2018 | 45 | 2018 |
| Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy MJ Antonell, CR Abernathy, A Sher, M Berding, M Van Schilfgaarde, ... Journal of crystal growth 188 (1-4), 113-118, 1998 | 25 | 1998 |
| Growth of Tl-containing III–V materials by gas-source molecular beam epitaxy MJ Antonell, CR Abernathy, A Sher, M Berding, M Van Schilfgaarde, ... Journal of crystal growth 188 (1-4), 113-118, 1998 | 25 | 1998 |
| Thermodynamical properties of thallium-based III-V materials MA Berding, M Van Schilfgaarde, A Sher, MJ Antonell, CR Abernathy Journal of Electronic Materials 26, 683-687, 1997 | 18 | 1997 |
| Doping of InSb and InAs using CBr4 during growth by gas source molecular beam epitaxy W Schoenfeld, MJ Antonell, CR Abernathy Journal of crystal growth 188 (1-4), 50-55, 1998 | 17 | 1998 |
| X-ray system M Antonell, EC Houge, JM McIntosh, LE Plew, C Vartuli US Patent 6,606,371, 2003 | 13 | 2003 |
| Nonalloyed high temperature ohmic contacts on Te-doped InP F Ren, MJ Antonell, CR Abernathy, SJ Pearton, JR LaRoche, MW Cole, ... Applied physics letters 74 (13), 1845-1847, 1999 | 11 | 1999 |
| Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500–600 C MJ Antonell, KS Jones, TE Haynes Journal of applied physics 79 (10), 7646-7651, 1996 | 11 | 1996 |
| Synthesis and characterization of In–Tl–Sb compounds grown by molecular beam epitaxy MJ Antonell, CR Abernathy, WA Acree, MA Berding, A Sher Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (2 …, 1999 | 7 | 1999 |
| Carbon doping of InSb using during growth by gas-source molecular beam epitaxy WV Schoenfeld, MJ Antonell, CR Abernathy Applied physics letters 72 (10), 1235-1237, 1998 | 6 | 1998 |
| Thermal stability of heavily tellurium-doped InP grown by metalorganic molecular beam epitaxy MJ Antonell, CR Abernathy, V Krishnamoorthy, RW Gedridge, TE Haynes Journal of Electronic Materials 26, 1283-1286, 1997 | 5 | 1997 |
| Tellurium doping of InP using triisopropylindium-diisopropyltellurium (TIPIn DIPTe) MJ Antonell, CR Abernathy, RW Gedridge Journal of crystal growth 164 (1-4), 420-424, 1996 | 5 | 1996 |
| Method for detecting defects in a material and a system for accomplishing the same EC Houge, C Vartuli, M Antonell, P Cavanagh, H Ma US Patent 6,870,950, 2005 | 4 | 2005 |
| Method and apparatus for minimizing semiconductor wafer contamination M Antonell, EC Houge, LE Plew, C Vartuli, J Juszczak US Patent 6,695,572, 2004 | 4 | 2004 |
| Growth and characterization of GaTlAs MJ Antonell, B Gila, K Powers, CR Abernathy Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (5 …, 2000 | 3 | 2000 |
Catherine VartuliApple, Texas Instruments, Lucent Technologies, University of FloridaVerified email at apple.com
