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Tom Zimmermann
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AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance
T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing
IEEE Electron Device Letters 29 (7), 661-664, 2008
2082008
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
S Ganguly, J Verma, G Li, T Zimmermann, H Xing, D Jena
Applied physics letters 99 (19), 2011
1812011
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
S Ganguly, J Verma, G Li, T Zimmermann, H Xing, D Jena
Applied physics letters 99 (19), 2011
1812011
Piezoelectric GaN sensor structures
T Zimmermann, M Neuburger, P Benkart, FJ Hernandez-Guillen, ...
IEEE electron device letters 27 (5), 309-312, 2006
1372006
P-channel InGaN-HFET structure based on polarization doping
T Zimmermann, M Neuburger, M Kunze, I Daumiller, A Denisenko, ...
IEEE Electron Device Letters 25 (7), 450-452, 2004
842004
Microfluidic enzymatic biosensing systems: A review
S Mross, S Pierrat, T Zimmermann, M Kraft
Biosensors and Bioelectronics 70, 376-391, 2015
832015
Ultra-nano-crystalline/single crystal diamond heterostructure diode
T Zimmermann, M Kubovic, A Denisenko, K Janischowsky, OA Williams, ...
Diamond and related materials 14 (3-7), 416-420, 2005
812005
Unstrained InAlN/GaN HEMT structure
M Neuburger, T Zimmermann, E Kohn, A Dadgar, F Schulze, A Krtschil, ...
Proceedings. IEEE Lester Eastman Conference on High Performance Devices …, 2004
722004
Threshold Voltage Control in HEMTs by Work-Function Engineering
G Li, T Zimmermann, Y Cao, C Lian, X Xing, R Wang, P Fay, HG Xing, ...
IEEE Electron Device Letters 31 (9), 954-956, 2010
622010
Polarization-engineered removal of buffer leakage for GaN transistors
Y Cao, T Zimmermann, H Xing, D Jena
Applied Physics Letters 96 (4), 2010
562010
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
J Guo, Y Cao, C Lian, T Zimmermann, G Li, J Verma, X Gao, S Guo, ...
physica status solidi (a) 208 (7), 1617-1619, 2011
432011
Formation of ohmic contacts to ultra‐thin channel AlN/GaN HEMTs
T Zimmermann, D Deen, Y Cao, D Jena, HG Xing
physica status solidi c 5 (6), 2030-2032, 2008
292008
Surface stability of InGaN-channel based HFETs
M Neuburger, I Daumiller, T Zimmermann, M Kunze, G Koley, ...
Electronics Letters 39 (22), 1614-1616, 2003
292003
Integrated multi-sensor system for parallel in-situ monitoring of cell nutrients, metabolites, cell density and pH in biotechnological processes
S Mross, T Zimmermann, N Winkin, M Kraft, H Vogt
Sensors and Actuators B: Chemical 236, 937-946, 2016
282016
2.3 nm barrier AlN/GaN HEMTs with insulated gates
D Deen, T Zimmermann, Y Cao, D Jena, HG Xing
physica status solidi c 5 (6), 2047-2049, 2008
23*2008
Nanocrystalline diamond pn-structure grown by Hot-Filament CVD
T Zimmermann, K Janischowsky, A Denisenko, FJH Guillén, M Kubovic, ...
Diamond and related materials 15 (2-3), 203-206, 2006
232006
2.3 nm barrier AlN/GaN HEMTs with insulated gates
D Deen, T Zimmermann, Y Cao, D Jena, HG Xing
physica status solidi c 5 (6), 2047-2049, 2008
222008
Ultrathin MBE-grown AlN/GaN HEMTs with record high current densities
Y Cao, T Zimmermann, D Deen, J Simon, J Bean, N Su, J Zhang, P Fay, ...
2007 International Semiconductor Device Research Symposium, 1-2, 2007
222007
Subcritical barrier AlN/GaN E/D‐mode HFETs and inverters
T Zimmermann, Y Cao, G Li, G Snider, D Jena, H Xing
physica status solidi (a) 208 (7), 1620-1622, 2011
202011
Integrated multi-sensor system for parallel in-situ monitoring of cell nutrients, metabolites and cell mass in biotechnological processes
S Mross, T Zimmermann, N Winkin, M Kraft, H Vogt
Procedia Engineering 120, 372-375, 2015
192015
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