Tom Zimmermann
Title
Cited by
Cited by
Year
AlN/GaN insulated-gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance
T Zimmermann, D Deen, Y Cao, J Simon, P Fay, D Jena, HG Xing
IEEE Electron Device Letters 29 (7), 661-664, 2008
1852008
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
S Ganguly, J Verma, G Li, T Zimmermann, H Xing, D Jena
Applied physics letters 99 (19), 193504, 2011
1582011
Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions
S Ganguly, J Verma, G Li, T Zimmermann, H Xing, D Jena
Applied physics letters 99 (19), 193504, 2011
1582011
Piezoelectric GaN sensor structures
T Zimmermann, M Neuburger, P Benkart, FJ Hernández-Guillén, ...
IEEE electron device letters 27 (5), 309-312, 2006
1182006
Ultra-nano-crystalline/single crystal diamond heterostructure diode
T Zimmermann, M Kubovic, A Denisenko, K Janischowsky, OA Williams, ...
Diamond and related materials 14 (3-7), 416-420, 2005
742005
P-channel InGaN-HFET structure based on polarization doping
T Zimmermann, M Neuburger, M Kunze, I Daumiller, A Denisenko, ...
IEEE Electron Device Letters 25 (7), 450-452, 2004
642004
Microfluidic enzymatic biosensing systems: A review
S Mross, S Pierrat, T Zimmermann, M Kraft
Biosensors and Bioelectronics 70, 376-391, 2015
582015
Unstrained InAlN/GaN HEMT structure
M Neuburger, T Zimmermann, E Kohn, A Dadgar, F Schulze, A Krtschil, ...
High Performance Devices, 161-166, 2005
572005
Unstrained InAlN/GaN HEMT structure
M Neuburger, T Zimmermann, E Kohn, A Dadgar, F Schulze, A Krtschil, ...
High Performance Devices, 161-166, 2005
572005
Threshold Voltage Control in HEMTs by Work-Function Engineering
G Li, T Zimmermann, Y Cao, C Lian, X Xing, R Wang, P Fay, HG Xing, ...
IEEE electron device letters 31 (9), 954-956, 2010
492010
Polarization-engineered removal of buffer leakage for GaN transistors
Y Cao, T Zimmermann, H Xing, D Jena
Applied Physics Letters 96 (4), 042102, 2010
492010
Metal‐face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy
J Guo, Y Cao, C Lian, T Zimmermann, G Li, J Verma, X Gao, S Guo, ...
physica status solidi (a) 208 (7), 1617-1619, 2011
282011
Surface stability of InGaN-channel based HFETs
M Neuburger, I Daumiller, T Zimmermann, M Kunze, G Koley, ...
Electronics Letters 39 (22), 1614-1616, 2003
272003
Formation of ohmic contacts to ultra‐thin channel AlN/GaN HEMTs
T Zimmermann, D Deen, Y Cao, D Jena, HG Xing
physica status solidi c 5 (6), 2030-2032, 2008
262008
2.3 nm barrier AlN/GaN HEMTs with insulated gates
D Deen, T Zimmermann, Y Cao, D Jena, HG Xing
physica status solidi c 5 (6), 2047-2049, 2008
22*2008
2.3 nm barrier AlN/GaN HEMTs with insulated gates
D Deen, T Zimmermann, Y Cao, D Jena, HG Xing
physica status solidi c 5 (6), 2047-2049, 2008
212008
Nanocrystalline diamond pn-structure grown by Hot-Filament CVD
T Zimmermann, K Janischowsky, A Denisenko, FJH Guillén, M Kubovic, ...
Diamond and related materials 15 (2-3), 203-206, 2006
212006
Si-containing recessed ohmic contacts and 210 GHz quaternary barrier InAlGaN high-electron-mobility transistors
R Wang, G Li, J Verma, T Zimmermann, Z Hu, O Laboutin, Y Cao, ...
Applied physics express 4 (9), 096502, 2011
202011
Subcritical barrier AlN/GaN E/D‐mode HFETs and inverters
T Zimmermann, Y Cao, G Li, G Snider, D Jena, H Xing
physica status solidi (a) 208 (7), 1620-1622, 2011
202011
Ultrathin MBE-grown AlN/GaN HEMTs with record high current densities
Y Cao, T Zimmermann, D Deen, J Simon, J Bean, N Su, J Zhang, P Fay, ...
2007 International Semiconductor Device Research Symposium, 1-2, 2007
202007
The system can't perform the operation now. Try again later.
Articles 1–20