| PCMO RRAM for integrate-and-fire neuron in spiking neural networks S Lashkare, S Chouhan, T Chavan, A Bhat, P Kumbhare, U Ganguly IEEE Electron Device Letters 39 (4), 484-487, 2018 | 122 | 2018 |
| Punchthrough-diode-based bipolar RRAM selector by Si epitaxy VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ... IEEE Electron Device Letters 33 (10), 1396-1398, 2012 | 109 | 2012 |
| PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP S Lashkare, N Panwar, P Kumbhare, B Das, U Ganguly IEEE Electron Device Letters 38 (9), 1212-1215, 2017 | 49 | 2017 |
| PrxCa1− xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem D Khilwani, V Moghe, S Lashkare, V Saraswat, P Kumbhare, ... APL Materials 7 (9), 2019 | 20 | 2019 |
| Transient joule heating-based oscillator neuron for neuromorphic computing S Lashkare, P Kumbhare, V Saraswat, U Ganguly IEEE Electron Device Letters 39 (9), 1437-1440, 2018 | 16 | 2018 |
| A bipolar RRAM selector with designable polarity dependent on-voltage asymmetry S Lashkare, P Karkare, P Bafna, MVS Raju, VSS Srinivasan, S Lodha, ... 2013 5th IEEE International Memory Workshop, 178-181, 2013 | 16 | 2013 |
| Stochastic learning in deep neural networks based on nanoscale PCMO device characteristics AV Babu, S Lashkare, U Ganguly, B Rajendran Neurocomputing 321, 227-236, 2018 | 15 | 2018 |
| Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM S Lashkare, V Saraswat, U Ganguly ACS Applied Electronic Materials 2 (7), 2026-2031, 2020 | 14 | 2020 |
| A simple and efficient SNN and its performance & robustness evaluation method to enable hardware implementation A Biswas, S Prasad, S Lashkare, U Ganguly arXiv preprint arXiv:1612.02233, 2016 | 14 | 2016 |
| Reaction-Drift Model for Switching Transients in Pr₀. ₇Ca₀. ₃MnO₃-Based Resistive RAM V Saraswat, S Prasad, A Khanna, A Wagh, A Bhat, N Panwar, S Lashkare, ... IEEE Transactions on Electron Devices 67 (9), 3610-3617, 2020 | 12 | 2020 |
| Epitaxial Si punch-through based selector for bipolar RRAM P Bafna, P Karkare, S Srinivasan, S Chopra, S Lashkare, Y Kim, ... 70th Device Research Conference, 115-116, 2012 | 12 | 2012 |
| High performance triangular barrier engineered NIPIN selector for bipolar RRAM R Meshram, B Das, R Mandapati, S Lashkare, S Deshmukh, S Lodha, ... 2014 IEEE 6th International Memory Workshop (IMW), 1-4, 2014 | 10 | 2014 |
| A dual-slope-based capacitance-to-time signal conditioning circuit for leaky capacitive sensors S Malik, K Kishore, L Somappa, S Lashkare, T Islam, SA Akbar, ... IEEE Transactions on Instrumentation and Measurement 70, 1-8, 2021 | 8 | 2021 |
| Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing S Lashkare, S Subramoney, U Ganguly IEEE Electron Device Letters 41 (9), 1344-1347, 2020 | 8 | 2020 |
| A case for multiple and parallel RRAMs as synaptic model for training SNNs A Shukla, S Prasad, S Lashkare, U Ganguly 2018 International Joint Conference on Neural Networks (IJCNN), 1-8, 2018 | 8 | 2018 |
| I-NPN: A sub-60mV/decade, sub-0.6 V selection diode for STTRAM S Deshmukh, S Lashkare, B Rajendran, U Ganguly 71st Device Research Conference, 113-114, 2013 | 8 | 2013 |
| Comparison of novel punch-through diode (NPN) selector with MIM selector for bipolar RRAM S Deshmukh, R Mandapati, S Lashkare, A Borkar, VSS Srivinasan, ... 2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, 51-54, 2012 | 6 | 2012 |
| Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N2: O2 Partial Pressure Dependent Annealing S Lashkare, J Sakhuja, U Ganguly 2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-5, 2019 | 5 | 2019 |
| Transient joule heating in PrMno3 RRAM enables ReLu type neuron S Lashkare, A Bhat, P Kumbhare, U Ganguly 2018 Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2018 | 5 | 2018 |
| Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase Noise V Saraswat, S Lashkare, P Kumbhare, U Ganguly 2019 Device Research Conference (DRC), 195-196, 2019 | 4 | 2019 |
Udayan GangulyProfessor, Electrical Engineering, IIT BombayVerified email at ee.iitb.ac.in
