Clifford L. Henderson
Clifford L. Henderson
Chair and Professor, Department of Chemical and Biomedical Engineering, University of South Florida
Verified email at usf.edu
Title
Cited by
Cited by
Year
The mechanism of phenolic polymer dissolution: A new perspective
PC Tsiartas, LW Flanagin, CL Henderson, WD Hinsberg, IC Sanchez, ...
Macromolecules 30 (16), 4656-4664, 1997
1371997
Influence of molecular weight and film thickness on the glass transition temperature and coefficient of thermal expansion of supported ultrathin polymer films
L Singh, PJ Ludovice, CL Henderson
Thin solid films 449 (1-2), 231-241, 2004
1362004
Fabrication of microchannels using polycarbonates as sacrificial materials
HA Reed, CE White, V Rao, SAB Allen, CL Henderson, PA Kohl
Journal of Micromechanics and Microengineering 11 (6), 733, 2001
1242001
Area selective atomic layer deposition of titanium dioxide: Effect of precursor chemistry
A Sinha, DW Hess, CL Henderson
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
1112006
Air-channel fabrication for microelectromechanical systems via sacrificial photosensitive polycarbonates
JP Jayachandran, HA Reed, H Zhen, LF Rhodes, CL Henderson, ...
Journal of Microelectromechanical Systems 12 (2), 147-159, 2003
1112003
Fabrication of semiconductor device with air gaps for ultra low capacitance interconnections and methods of making same
PA Kohl, SAB Allen, CL Henderson, HA Reed, DM Bhusari
US Patent 6,610,593, 2003
832003
Fabrication of semiconductor device with air gaps for ultra low capacitance interconnections and methods of making same
PA Kohl, SAB Allen, CL Henderson, HA Reed, DM Bhusari
US Patent 6,610,593, 2003
832003
High charge carrier mobility, low band gap donor–acceptor benzothiadiazole-oligothiophene based polymeric semiconductors
B Fu, J Baltazar, Z Hu, AT Chien, S Kumar, CL Henderson, DM Collard, ...
Chemistry of Materials 24 (21), 4123-4133, 2012
802012
Area-selective ALD of titanium dioxide using lithographically defined poly (methyl methacrylate) films
A Sinha, DW Hess, CL Henderson
Journal of the Electrochemical Society 153 (5), G465, 2006
732006
Area-selective ALD of titanium dioxide using lithographically defined poly (methyl methacrylate) films
A Sinha, DW Hess, CL Henderson
Journal of the Electrochemical Society 153 (5), G465, 2006
732006
Modeling effects of oxygen inhibition in mask‐based stereolithography
D Bourell, B Stucker, AS Jariwala, F Ding, A Boddapati, V Breedveld, ...
Rapid Prototyping Journal, 2011
682011
A correlation study between barrier film performance and shelf lifetime of encapsulated organic solar cells
N Kim, WJ Potscavage Jr, A Sundaramoothi, C Henderson, B Kippelen, ...
Solar energy materials and Solar cells 101, 140-146, 2012
662012
Creating Graphene p–n junctions using self-assembled monolayers
H Sojoudi, J Baltazar, LM Tolbert, CL Henderson, S Graham
ACS applied materials & interfaces 4 (9), 4781-4786, 2012
612012
Sacrificial compositions and methods of fabricating a structure using sacrificial compositions
PA Kohl, PJ Joseph, HK Reed, SA Bidstrup-Allen, CE White, ...
US Patent 7,695,894, 2010
612010
Engineering substructure morphology of asymmetric carbon molecular sieve hollow fiber membranes
N Bhuwania, Y Labreche, CSK Achoundong, J Baltazar, SK Burgess, ...
Carbon 76, 417-434, 2014
602014
Patterning of sacrificial materials
W King, C Henderson, H Rowland, C White
US Patent App. 10/990,940, 2005
592005
Production of heavily n-and p-doped CVD graphene with solution-processed redox-active metal–organic species
SA Paniagua, J Baltazar, H Sojoudi, SK Mohapatra, S Zhang, ...
Materials Horizons 1 (1), 111-115, 2014
572014
Impact of post-growth thermal annealing and environmental exposure on the unintentional doping of CVD graphene films
H Sojoudi, J Baltazar, C Henderson, S Graham
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2012
542012
A top surface imaging method using area selective ALD on chemically amplified polymer photoresist films
A Sinha, DW Hess, CL Henderson
Electrochemical and Solid State Letters 9 (11), G330, 2006
472006
Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
PA Kohl, SAB Allen, CL Henderson, HA Reed, DM Bhusari
US Patent 6,888,249, 2005
472005
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