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Dr.D.Nirmal
Dr.D.Nirmal
Associate Dean Engineering and Technology, Karunya University
Verified email at karunya.edu - Homepage
Title
Cited by
Cited by
Year
A survey of Gallium Nitride HEMT for RF and high power applications
ASA Fletcher, D Nirmal
Superlattices and Microstructures, 2017
2512017
A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies
J Ajayan, D Nirmal, P Mohankumar, M Saravanan, M Jagadesh, ...
Superlattices and Microstructures 143, 106549, 2020
1742020
A review of InP/InAlAs/InGaAs based transistors for high frequency applications
J Ajayan, D Nirmal
Superlattices and Microstructures 86, 1-19, 2015
1602015
A review of GaN HEMT broadband power amplifiers
KH Hamza, D Nirmal
AEU-International Journal of Electronics and Communications 116, 153040, 2020
1432020
Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications
JC Pravin, D Nirmal, P Prajoon, J Ajayan
Physica E: Low-dimensional Systems and Nanostructures 83, 95-100, 2016
1092016
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ...
Microelectronics Journal 114, 105141, 2021
852021
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
J Ajayan, D Nirmal, P Prajoon, JC Pravin
AEU-International Journal of Electronics and Communications 79, 151-157, 2017
832017
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan
AEU-International Journal of Electronics and Communications 99, 325-330, 2019
782019
Investigation on Simulation-Based Specific Absorption Rate in Ultra-Wideband Antenna for Breast Cancer Detection
S Subramanian, B Sundarambal, D Nirmal
IEEE Sensors Journal 18 (24), 10002-10009, 2018
782018
Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review
J Ajayan, D Nirmal, P Mohankumar, B Mounika, S Bhattacharya, S Tayal, ...
Materials Science in Semiconductor Processing 151, 106982, 2022
752022
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ...
AEU-International Journal of Electronics and Communications 94, 199-214, 2018
742018
Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
B Mounika, J Ajayan, S Bhattacharya, D Nirmal
Micro and Nanostructures 168, 207317, 2022
562022
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs
BK Jebalin, AS Rekh, P Prajoon, NM Kumar, D Nirmal
Microelectronics Journal 46 (12), 1387-1391, 2015
552015
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon
Superlattices and Microstructures 113, 810-820, 2018
532018
Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics
D Nirmal, P Vijayakumar, DM Thomas, BK Jebalin, N Mohankumar
Microelectronics Reliability 53 (3), 499-504, 2012
502012
20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications
J Ajayan, D Nirmal
Superlattices and Microstructures 100, 526-534, 2016
482016
20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications
J Ajayan, D Nirmal
International Journal of Electronics 104 (3), 504-512, 2017
472017
On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates
A Jarndal, L Arivazhagan, D Nirmal
International Journal of RF and Microwave Computer‐Aided Engineering 30 (6 …, 2020
462020
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
J Ajayan, D Nirmal, P Mohankumar, D Kuriyan, ASA Fletcher, ...
Microelectronics Journal 92, 104604, 2019
452019
Handbook for III-V High Electron Mobility Transistor Technologies
D Nirmal, J Ajayan
CRC Press, 2019
442019
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