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Dr.D.Nirmal
Dr.D.Nirmal
Associate Dean Engineering and Technology, Karunya University
Verified email at karunya.edu - Homepage
Title
Cited by
Cited by
Year
A survey of Gallium Nitride HEMT for RF and high power applications
ASA Fletcher, D Nirmal
Superlattices and Microstructures, 2017
2102017
A review of InP/InAlAs/InGaAs based transistors for high frequency applications
J Ajayan, D Nirmal
Superlattices and Microstructures 86, 1-19, 2015
1372015
A review of photovoltaic performance of organic/inorganic solar cells for future renewable and sustainable energy technologies
J Ajayan, D Nirmal, P Mohankumar, M Saravanan, M Jagadesh, ...
Superlattices and Microstructures 143, 106549, 2020
1312020
A review of GaN HEMT broadband power amplifiers
KH Hamza, D Nirmal
AEU-International Journal of Electronics and Communications 116, 153040, 2020
1202020
Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications
JC Pravin, D Nirmal, P Prajoon, J Ajayan
Physica E: Low-dimensional Systems and Nanostructures 83, 95-100, 2016
992016
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
J Ajayan, D Nirmal, P Prajoon, JC Pravin
AEU-International Journal of Electronics and Communications 79, 151-157, 2017
752017
Analysis of AlGaN/GaN HEMT using discrete field plate technique for high power and high frequency applications
ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan
AEU-International Journal of Electronics and Communications 99, 325-330, 2019
682019
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ...
AEU-International Journal of Electronics and Communications 94, 199-214, 2018
652018
Investigation on Simulation-Based Specific Absorption Rate in Ultra-Wideband Antenna for Breast Cancer Detection
S Subramanian, B Sundarambal, D Nirmal
IEEE Sensors Journal 18 (24), 10002-10009, 2018
622018
Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study
J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ...
Microelectronics Journal 114, 105141, 2021
612021
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs
BK Jebalin, AS Rekh, P Prajoon, NM Kumar, D Nirmal
Microelectronics Journal 46 (12), 1387-1391, 2015
522015
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon
Superlattices and Microstructures 113, 810-820, 2018
502018
Subthreshold performance of gate engineered FinFET devices and circuit with high-k dielectrics
D Nirmal, P Vijayakumar, DM Thomas, BK Jebalin, N Mohankumar
Microelectronics Reliability 53 (3), 499-504, 2012
492012
20-nm enhancement-mode metamorphic GaAs HEMT with highly doped InGaAs source/drain regions for high-frequency applications
J Ajayan, D Nirmal
International Journal of Electronics 104 (3), 504-512, 2017
452017
20 nm high performance enhancement mode InP HEMT with heavily doped S/D regions for future THz applications
J Ajayan, D Nirmal
Superlattices and Microstructures 100, 526-534, 2016
452016
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications
L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ...
AEU-International Journal of Electronics and Communications 108, 189-194, 2019
432019
On the performance of GaN‐on‐Silicon, Silicon‐Carbide, and Diamond substrates
A Jarndal, L Arivazhagan, D Nirmal
International Journal of RF and Microwave Computer‐Aided Engineering 30 (6 …, 2020
412020
Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications
BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal
Superlattices and Microstructures 78, 210-223, 2015
412015
A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications
J Ajayan, D Nirmal, R Mathew, D Kurian, P Mohankumar, L Arivazhagan, ...
Materials Science in Semiconductor Processing 128, 105753, 2021
372021
A New Drain Current Model for a Dual Metal Junctionless Transistor for Enhanced Digital Circuit Performance
JC Pravin, D Nirmal, P Prajoon, MA Menokey
IEEE Transactions on Electron Devices 63 (9), 3782-3789, 2016
362016
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