| The 2018 GaN power electronics roadmap H Amano, Y Baines, E Beam, M Borga, T Bouchet, PR Chalker, M Charles, ... Journal of Physics D: Applied Physics 51 (16), 163001, 2018 | 722 | 2018 |
| Reliability of GaN high-electron-mobility transistors: State of the art and perspectives G Meneghesso, G Verzellesi, F Danesin, F Rampazzo, F Zanon, A Tazzoli, ... IEEE Transactions on Device and Materials Reliability 8 (2), 332-343, 2008 | 684 | 2008 |
| Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies G Verzellesi, D Saguatti, M Meneghini, F Bertazzi, M Goano, ... Journal of Applied Physics 114 (7), 10_1, 2013 | 418 | 2013 |
| Surface-related drain current dispersion effects in AlGaN-GaN HEMTs G Meneghesso, G Verzellesi, R Pierobon, F Rampazzo, A Chini, ... IEEE Transactions on Electron Devices 51 (10), 1554-1561, 2004 | 379 | 2004 |
| Deep-level characterization in GaN HEMTs-Part I: Advantages and limitations of drain current transient measurements D Bisi, M Meneghini, C De Santi, A Chini, M Dammann, P Brueckner, ... IEEE Transactions on electron devices 60 (10), 3166-3175, 2013 | 320 | 2013 |
| A review on the physical mechanisms that limit the reliability of GaN-based LEDs M Meneghini, A Tazzoli, G Mura, G Meneghesso, E Zanoni IEEE Transactions on Electron Devices 57 (1), 108-118, 2009 | 301 | 2009 |
| A review on the reliability of GaN-based LEDs M Meneghini, LR Trevisanello, G Meneghesso, E Zanoni IEEE Transactions on Device and Materials Reliability 8 (2), 323-331, 2008 | 296 | 2008 |
| Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008 | 203 | 2008 |
| Current collapse and high-electric-field reliability of unpassivated GaN/AlGaN/GaN HEMTs G Meneghesso, F Rampazzo, P Kordos, G Verzellesi, E Zanoni IEEE Transactions on Electron Devices 53 (12), 2932-2941, 2006 | 196 | 2006 |
| Power GaN Devices M Meneghini, G Meneghesso, E Zanoni Cham: Springer International Publishing, 2017 | 155 | 2017 |
| A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes M Meneghini, N Trivellin, G Meneghesso, E Zanoni, U Zehnder, B Hahn Journal of Applied Physics 106 (11), 114508, 2009 | 147 | 2009 |
| Investigation of high-electric-field degradation effects in AlGaN/GaN HEMTs M Faqir, G Verzellesi, G Meneghesso, E Zanoni, F Fantini IEEE Transactions on Electron Devices 55 (7), 1592-1602, 2008 | 146 | 2008 |
| AlGaN/GaN-based HEMTs failure physics and reliability: Mechanisms affecting gate edge and Schottky junction E Zanoni, M Meneghini, A Chini, D Marcon, G Meneghesso IEEE Transactions on Electron Devices 60 (10), 3119-3131, 2013 | 142 | 2013 |
| Investigation of trapping and hot-electron effects in GaN HEMTs by means of a combined electrooptical method M Meneghini, N Ronchi, A Stocco, G Meneghesso, UK Mishra, Y Pei, ... IEEE transactions on electron devices 58 (9), 2996-3003, 2011 | 140 | 2011 |
| Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias M Meneghini, A Stocco, M Bertin, D Marcon, A Chini, G Meneghesso, ... Applied Physics Letters 100 (3), 033505, 2012 | 136 | 2012 |
| Buffer traps in Fe-doped AlGaN/GaN HEMTs: Investigation of the physical properties based on pulsed and transient measurements M Meneghini, I Rossetto, D Bisi, A Stocco, A Chini, A Pantellini, C Lanzieri, ... IEEE Transactions on Electron Devices 61 (12), 4070-4077, 2014 | 127 | 2014 |
| Mechanisms of RF current collapse in AlGaN–GaN high electron mobility transistors M Faqir, G Verzellesi, A Chini, F Fantini, F Danesin, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 240-247, 2008 | 125 | 2008 |
| Performance degradation of high-brightness light emitting diodes under DC and pulsed bias S Buso, G Spiazzi, M Meneghini, G Meneghesso IEEE Transactions on Device and Materials Reliability 8 (2), 312-322, 2008 | 124 | 2008 |
| Reliability issues of gallium nitride high electron mobility transistors G Meneghesso, M Meneghini, A Tazzoli, A Stocco, A Chini, E Zanoni International Journal of Microwave and Wireless Technologies 2 (1), 39-50, 2010 | 121 | 2010 |
| Recent results on the degradation of white LEDs for lighting G Meneghesso, M Meneghini, E Zanoni Journal of Physics D: Applied Physics 43 (35), 354007, 2010 | 119 | 2010 |
Enrico ZanoniProfessor, Electronics, University of PadovaVerified email at dei.unipd.it
