| Formation and growth of nanoindentation-induced high pressure phases in crystalline and amorphous silicon S Ruffell, JE Bradby, JS Williams, P Munroe Journal of Applied Physics 102 (6), 2007 | 92 | 2007 |
| An in situ electrical measurement technique via a conducting diamond tip for nanoindentation in silicon S Ruffell, JE Bradby, JS Williams, OL Warren Journal of Materials Research 22 (3), 578-586, 2007 | 82 | 2007 |
| High pressure crystalline phase formation during nanoindentation: amorphous versus crystalline silicon S Ruffell, JE Bradby, JS Williams Applied physics letters 89 (9), 2006 | 78 | 2006 |
| Phase transformations induced by spherical indentation in ion-implanted amorphous silicon B Haberl, JE Bradby, S Ruffell, JS Williams, P Munroe Journal of applied physics 100 (1), 2006 | 78 | 2006 |
| Identification of nanoindentation-induced phase changes in silicon by in situ electrical characterization S Ruffell, JE Bradby, N Fujisawa, JS Williams Journal of Applied Physics 101 (8), 2007 | 74 | 2007 |
| Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon FE Rougieux, D Macdonald, A Cuevas, S Ruffell, J Schmidt, B Lim, ... Journal of Applied Physics 108 (1), 2010 | 70 | 2010 |
| Nanoindentation-induced phase transformations in silicon at elevated temperatures S Ruffell, JE Bradby, JS Williams, D Munoz-Paniagua, S Tadayyon, ... Nanotechnology 20 (13), 135603, 2009 | 68 | 2009 |
| Annealing of nanoindentation-induced high pressure crystalline phases created in crystalline and amorphous silicon S Ruffell, B Haberl, S Koenig, JE Bradby, JS Williams Journal of Applied Physics 105 (9), 2009 | 56 | 2009 |
| Annealing behavior of low-energy ion-implanted phosphorus in silicon S Ruffell, IV Mitchell, PJ Simpson Journal of applied physics 97 (12), 2005 | 47 | 2005 |
| Structural characterization of pressure-induced amorphous silicon B Haberl, ACY Liu, JE Bradby, S Ruffell, JS Williams, P Munroe Physical Review B 79 (15), 155209, 2009 | 46 | 2009 |
| Influence of oxygen on the sputtering of aluminum oxide for the surface passivation of crystalline silicon TTA Li, S Ruffell, M Tucci, Y Mansoulié, C Samundsett, S De Iullis, ... Solar energy materials and solar cells 95 (1), 69-72, 2011 | 44 | 2011 |
| Nanoindentation-induced phase transformation in crystalline silicon and relaxed amorphous silicon R Rao, JE Bradby, S Ruffell, JS Williams Microelectronics journal 38 (6-7), 722-726, 2007 | 44 | 2007 |
| Nanomechanical properties of sputter-deposited HfO2 and HfxSi1-xO2 thin films DK Venkatachalam, JE Bradby, MN Saleh, S Ruffell, RG Elliman Journal of Applied Physics 110 (4), 2011 | 42 | 2011 |
| Understanding pressure-induced phase-transformation behavior in silicon through in situ electrical probing under cyclic loading conditions N Fujisawa, S Ruffell, JE Bradby, JS Williams, B Haberl, OL Warren Journal of Applied Physics 105 (10), 2009 | 40 | 2009 |
| Experimental evidence for semiconducting behavior of Si-XII S Ruffell, K Sears, AP Knights, JE Bradby, JS Williams Physical Review B 83 (7), 075316, 2011 | 39 | 2011 |
| Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation S Ruffell, K Sears, JE Bradby, JS Williams Applied Physics Letters 98 (5), 2011 | 38 | 2011 |
| Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films S Srinivasan, FA Khaja, S Ruffell, J Hautala US Patent 9,287,123, 2016 | 34 | 2016 |
| Nanoscale characterization of energy generation from piezoelectric thin films M Bhaskaran, S Sriram, S Ruffell, A Mitchell Advanced Functional Materials 21 (12), 2251-2257, 2011 | 33 | 2011 |
| Annealing kinetics of nanoindentation-induced polycrystalline high pressure phases in crystalline silicon S Ruffell, JE Bradby, JS Williams Applied physics letters 90 (13), 2007 | 28 | 2007 |
| Effects of carbon on ion-implantation-induced disorder in GaN SO Kucheyev, JE Bradby, CP Li, S Ruffell, T van Buuren, TE Felter Applied Physics Letters 91 (26), 2007 | 27 | 2007 |
