Lourdes G Salamanca-Riba

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Satishchandra B. OgaleIndian Institute of Science Education and Research, Pune and The Research Institute for SustainableVerified email at iiserpune.ac.in
Sam LoflandProfessor of Physics, Rowan UniversityVerified email at rowan.edu
Wendy SarneyDEVCOM Army Research LaboratoryVerified email at army.mil
Haimei ZhengSenior Scientist, Lawrence Berkeley National Lab & Adj. Professor, UC BerkeleyVerified email at lbl.gov
R. D. VisputeBlue Wave SemiconductorsVerified email at bluewavesemi.com
Ichiro TakeuchiUniversity of MarylandVerified email at umd.edu
Sanjay ShindeCanon U.S.A.Verified email at cusa.canon.com
Darrell G. SchlomCornell UniversityVerified email at cornell.edu

Lourdes G Salamanca-Riba

University of Maryland

Verified email at umd.edu - Homepage

wide gap semiconductors transmission electron microscopy metal carbon composites


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Multiferroic batio3-cofe2o4 nanostructures H Zheng, J Wang, SE Lofland, Z Ma, L Mohaddes-Ardabili, T Zhao, ... Science 303 (5658), 661-663, 2004	2610	2004
Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices RD Vispute, V Talyansky, S Choopun, RP Sharma, T Venkatesan, M He, ... Applied Physics Letters 73 (3), 348-350, 1998	635	1998
On the origin of high-temperature ferromagnetism in the low-temperature-processed Mn–Zn–O system DC Kundaliya, SB Ogale, SE Lofland, S Dhar, CJ Metting, SR Shinde, ... Nature materials 3 (10), 709-714, 2004	571	2004
Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite S Fujino, M Murakami, V Anbusathaiah, SH Lim, V Nagarajan, CJ Fennie, ... Applied Physics Letters 92 (20), 2008	331	2008
Dielectric properties in heteroepitaxial thin films: Effect of internal stresses and dislocation-type defects CL Canedy, H Li, SP Alpay, L Salamanca-Riba, AL Roytburd, R Ramesh Applied Physics Letters 77 (11), 1695-1697, 2000	295	2000
Inversion of wurtzite GaN (0001) by exposure to magnesium V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ... Applied Physics Letters 75 (6), 808-810, 1999	276	1999
Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with M He, I Minus, P Zhou, SN Mohammed, JB Halpern, R Jacobs, WL Sarney, ... Applied Physics Letters 77 (23), 3731-3733, 2000	272	2000
Niobium doped TiO2: Intrinsic transparent metallic anatase versus highly resistive rutile phase SX Zhang, DC Kundaliya, W Yu, S Dhar, SY Young, LG Salamanca-Riba, ... Journal of Applied Physics 102 (1), 2007	229	2007
Thickness dependence of structural and electrical properties in epitaxial lead zirconate titanate films V Nagarajan, IG Jenkins, SP Alpay, H Li, S Aggarwal, L Salamanca-Riba, ... Journal of Applied Physics 86 (1), 595-602, 1999	205	1999
Tuning of Vertical and Lateral Correlations in Self-Organized Quantum Dot Superlattices G Springholz, M Pinczolits, P Mayer, V Holy, G Bauer, HH Kang, ... Physical review letters 84 (20), 4669, 2000	199	2000
Three-dimensional heteroepitaxy in self-assembled BaTiO3–CoFe2O4 nanostructures H Zheng, J Wang, L Mohaddes-Ardabili, M Wuttig, L Salamanca-Riba, ... Applied Physics Letters 85 (11), 2035-2037, 2004	193	2004
Self-assembled single-crystal ferromagnetic iron nanowires formed by decomposition L Mohaddes-Ardabili, H Zheng, SB Ogale, B Hannoyer, W Tian, J Wang, ... Nature materials 3 (8), 533-538, 2004	192	2004
In situ observation of reversible nanomagnetic switching induced by electric fields T Brintlinger, SH Lim, KH Baloch, P Alexander, Y Qi, J Barry, J Melngailis, ... Nano letters 10 (4), 1219-1223, 2010	190	2010
FeS₂ Nanoparticles Embedded in Reduced Graphene Oxide toward Robust, High‐Performance Electrocatalysts Y Chen, S Xu, Y Li, RJ Jacob, Y Kuang, B Liu, Y Wang, G Pastel, ... Advanced Energy Materials 7 (19), 1700482, 2017	164	2017
Dependence of dielectric properties on internal stresses in epitaxial barium strontium titanate thin films H Li, AL Roytburd, SP Alpay, TD Tran, L Salamanca-Riba, R Ramesh Applied Physics Letters 78 (16), 2354-2356, 2001	164	2001
Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN DF Wang, F Shiwei, C Lu, A Motayed, M Jah, SN Mohammad, KA Jones, ... Journal of Applied Physics 89 (11), 6214-6217, 2001	160	2001
Growth of GaAsN/GaAs, GaInAsN/GaAs and GaInAsN/GaAs quantum wells by low-pressure organometallic chemical vapor deposition R Bhat, C Caneau, L Salamanca-Riba, W Bi, C Tu Journal of crystal growth 195 (1-4), 427-437, 1998	152	1998
Growth of GaN nanowires by direct reaction of Ga with NH3 M He, P Zhou, SN Mohammad, GL Harris, JB Halpern, R Jacobs, ... Journal of Crystal Growth 231 (3), 357-365, 2001	149	2001
Evidence for power-law frequency dependence of intrinsic dielectric response in the A Tselev, CM Brooks, SM Anlage, H Zheng, L Salamanca-Riba, ... Physical Review B—Condensed Matter and Materials Physics 70 (14), 144101, 2004	131	2004
Generation of degradation defects, stacking faults, and misfit dislocations in ZnSe‐based films grown on GaAs LH Kuo, L Salamanca‐Riba, BJ Wu, GM Haugen, JM DePuydt, G Hofler, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995	114	1995

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